Q150T S/E/ES plus 使用说明书
Q150T S/E/ESplus 使用说明书
沉浸式翻译
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有关技术和 应用建议，请访问www.Quorumtech 的。com
有关技术和应用建议 ，请访问 wwwQuorumtech 的。com
问题 | 日期 | 详 | 修订者 |
1 | 03/06/10 | 初始问题 | SRM |
2 | 20/08/10 | 辉光放电更新 | SRM |
3 | 31/01/12 | 斜面配方， 孔径清洁更新， 铝涂层 | SRM |
4 | 04/02/13 | 供气、棒材成型说明、除气 | SRM |
5 | 12/06/14 | 添加受控脉冲碳和其他校正 | SRM |
6 | 03/08/15 | CE 更新和新的警告消息 | SRM |
7 | 19/07/16 | 替换目标表 | SRM |
8 | 31/08/18 | Plus 模型修订版 | SRM |
免責聲明
免責聲明
本文档 中描述的 组件和软件包相互 兼容 ，并保证满足或超过已发布的 性能规格。 但是，在这些 组件包存在 的情况下，不能 提供性能保证 与 Quorum Technologies Ltd
本文档中描述的组件和软件包相互兼容 ，并保证满足或超过已发布的性能规格。 但是 ， 如果这些组件包与非公司提供的设备一起使用，则不能提供性能保证 QuorumTechnologiesLtd. 公司. 以外的 公司提供的 设备一起使用。
本文档中描述的组件和软件包相互兼容 ，并保证满足或超过已发布的性能规格。 但是 ， 在这些组件包存在的情况下，不能提供性能保证与 QuorumTechnologiesLtd. 以外的公司提供的设备一起使用 。
www.quorumtech.com
Quorum Technologies Limited 公司编号 04273003
QuorumTechnologiesLimited 公司编号 04273003
注册办公地址：Unit 19， Charlwoods Road， East Grinstead， West Sussex， RH19 2HL， UK
注册办公地址 ：Unit19， Charlwoods Road，East Grinstead， WestSussex，RH 19 2HL，UK
Q150T S/E/ES 加
内容
内容
本章节内容
本章节内容
1 引言 8
1 引言 8
1.1 概述 8
1.1 概述 8
1.2 溅射镀膜 9
1.2 溅射镀膜 9
1.3 碳涂层 9
1.3 碳涂层 9
1.4 金属蒸发 10
1.4 金属蒸发 10
1.5 孔径清洁 10
1.5 孔径清洁 10
1.6 辉光放电 10
1.6 辉光放电 10
2 安装 11
2 安装 11
2.1 预装 11
2.1 预装 11
2.1.1 所需服务 ............................................................................................11
2.1.1 所需服务 ............................................................................................11
2.2 开箱 12
2.2 开箱 12
2.3 连接 13
2.3 连接 13
2.3.1 气体连接 14
2.3.1 气体连接 14
2.3.2 电气连接 15
2.3.3 辅助网络连接 16
2.3.3 辅助网络连接 16
2.3.4 USB连接 16
2.3.4 USB 连接 16
2.3.5 真空连接 16
2.3.5 真空连接 16
2.4 安装标准 Stage 17
2.4 安装标准 Stage 17
2.5 状态指示 18
2.5 状态指示 18
2.6 音频 18
2.6 音频 18
3 作 19
3 作 19
3.1 第一次 开机 19
3.1 第一次开机 19
3.2 主屏幕 19
3.2 主屏幕 19
3.3 运行配方 20
3.3 运行配方 20
4 使用配方 22
4 使用配方 22
4.1.1 创建新的 配方....................................................................................23
4.1.1 创建新的配方 ....................................................................................23
4.1.2 编辑配方参数..............................................................................24
4.1.2 编辑配方参数 ..............................................................................24
4.1.3 复制 配方..............................................................................................25
4.1.3 复制配方 ..............................................................................................25
4.1.4 重命名 配方..........................................................................................25
4.1.4 重命名配方 ..........................................................................................25
4.1.5 删除 配方.............................................................................................25
4.1.5 删除配方 .............................................................................................25
4.2 材料 26
4.2 材料 26
4.3 材料清单 26
4.3 材料清单 26
4.3.1 创建新 材质..................................................................................27
4.3.1 创建新材质 ..................................................................................27
4.3.2 编辑材质参数 ...........................................................................27
4.3.2 编辑材质参数 ...........................................................................27
4.3.3 删除 材质...........................................................................................28
4.3.3 删除材质 ...........................................................................................28
5 申请指南 29
5 申请指南 29
5.1 定时溅射 29
5.1 定时溅射 29
5.1.1 钨 SEM 工作.........................................................................................29
5.1.1 钨 SEM 工作 .........................................................................................29
5.1.2 用于场发射 SEM .............的高分辨率 SEM 涂层 ....................29
5.1.2 用于场发射 SEM ............. 的高分辨率 SEM 涂层 ....................29
5.1.3 铝薄膜 29
5.1.3 铝薄膜 29
5.2 FTM 溅射.....................................................................................................................30
5.2 FTM 溅射 .....................................................................................................................30
5.2.1 用于场发射 SEM .............的高分辨率 SEM 涂层 ....................30
5.2.1 用于场发射 SEM ............. 的高分辨率 SEM 涂层 ....................30
5.2.2 一般薄膜 涂层...............................................................................31
5.2.2 一般薄膜涂层 ...............................................................................31
5.3 金属蒸发..........................................................................................................31
5.3 金属蒸发 ..........................................................................................................31
5.3.1 如何 获得 20nm 金涂层.............................................................31
5.3.1 如何获得 20nm 金涂层 .............................................................31
5.4 脉冲索蒸发...............................................................................................32
5.4 脉冲索蒸发 ...............................................................................................32
5.4.1 如何 创建 20nm 碳涂层.......................................................... 32
5.4.1 如何创建 20nm 碳涂层 .......................................................... 32
5.5 受控脉冲线 E蒸发 33
5.5 受控脉冲线 E 蒸发 33
5.5.1 为 EBSD 33
5.5.1 为 EBSD33 创建 15nm 至 2nm 的涂层 创建 15nm 至 2nm 的涂层
5.5.1 为 EBSD 33 创建 15nm 至 2nm 的涂层
5.6 脉冲棒蒸发 34
5.6 脉冲棒蒸发 34
5.6.1 如何为 SEM 创建导电层r 34
5.6.1 如何为 SEM 创建导电层 r34
5.7 使用排气源选项 35
5.7 使用排气源选项 35
5.7.1 设置排气源选项 36
5.7.1 设置排气源选项 36
5.7.2 运行多次放气 36
5.7.2 运行多次放气 36
5.8 斜坡配方 37
5.8 斜坡配方 37
5.8.1 碳嵌件设置 37
5.8.1 碳嵌件设置 37
5.8.2 定时斜坡碳配方 38
5.8.2 定时斜坡碳配方 38
5.8.3 调整涂层厚度 39
5.8.3 调整涂层厚度 39
5.8.4 如何为 TEM 40
5.8.4 如何为 TEM40 创建碳支撑层 创建 碳支撑层
5.8.5 如何创建导电碳层 f或 SEM 41
5.8.5 如何创建导电碳层 f 或 SEM41
5.8.6 由 FTM 42
5.8.6 由 FTM 42 控制的厚度斜坡碳 控制的厚度斜坡碳
5.8.6 由 FTM 42 控制的厚度斜坡碳
5.9 辉光放电 43
5.9 辉光放电 43
5.9.1 亲 水性 43
5.9.1 亲水性 43
5.9.2 表面清洁 43
5.9.2 表面清洁 43
5.10 光圈清洁 44
5.10 光圈清洁 44
6 仪器设置 46
6 仪器设置 46
6.1.1 日期 47
6.1.1 日期 47
6.1.2 文件管理器 47
6.1.2 文件管理器 47
6.1.3 关于 47
6.1.3 关于 47
6.1.4 FTM 48
6.1.5 Maintenance 48
6.2 用户管理 49
6.2 用户管理 49
6.2.1 添加用户 49
6.2.1 添加用户 49
6.2.2 编辑用户 50
6.2.2 编辑用户 50
6.2.3 删除 用户账户 50
6.2.3 删除用户账户 50
6.2.4 登录 51
6.2.4 登录 51
6.2.5 默认 U系列 51
6.2.5 默认 U 系列 51
6.3 属性 51
6.3 属性 51
6.3.1 溅射参数 52
6.3.1 溅射参数 52
6.3.2 真空参数 53
6.3.2 真空参数 53
6.3.3 硬件参数 54
6.3.3 硬件参数 54
6.4 历史 56
6.4 历史 56
7 配件 57
7 配件 57
7.1 溅射插件 57
7.1 溅射插件 57
7.2 碳杆嵌件 59
7.2 碳杆嵌件 59
7.2.1 脉冲 蒸发 碳棒成型 60
7.2.1 脉冲蒸发碳棒成型 60
7.2.2 用于斜坡蒸发 的成型 Carbon 棒 62
7.2.2 用于斜坡蒸发的成型 Carbon 棒 62
7.3 安装 Carbon Fibre Insert 62
7.3 安装碳纤维 Insert 62
7.4 金属蒸发插件 63
7.4 金属蒸发插件 63
7.4.1 安装线篮 64
7.4.2 安装钼舟进行孔径清洁 64
7.4.2 安装钼舟进行孔径清洁 64
7.4.3 调整插件以向上 蒸发 64
7.4.3 调整插件以向上蒸发 64
7.4.4 重新定位 FTM 64
7.4.4 重新定位 FTM64
7.5 辉光放电插件 66
7.5 辉光放电插件 66
7.6 Rotacota 第 68 期
7.6Rotacota 第 68 期
7.7 滑台 69
7.7 滑台 69
7.8 102mm 载物台和变速箱 70
7.8 102mm 载物台和变速箱 70
7.9 倾斜舞台 71
7.9 倾斜舞台 71
7.10 膜厚 Monitor （FTM） 72
7.10 膜厚 Monitor （FTM）72
7.10.1 更换 FTM 晶振 72
7.10.1 更换 FTM 晶振 72
7.11 加长高度气缸 73
7.12 全范围真空计组件 74
10473 - 第 8 期 4 www.quorumtech.com
10473 - 第 8 期 4 www.quorumtech.com
7.13 旋转真空龙头 75
7.13 旋转真空龙头 75
7.14 备用 76
7.14 备用 76
7.15 其他配饰 77
7.15 其他配饰 77
8 服务与维护 78
8 服务与维护 78
8.1 养护 78
8.1 养护 78
8.2 服务 78
8.2 服务 78
8.3 故障排除 79
8.3 故障排除 79
8.4 错误消息 79
8.4 错误消息 79
9 附录 82
9 附录 82
9.1 配方参数 82
9.1 配方参数 82
9.2 覆盖配方 中的 系统参数 88
9.2 覆盖配方 中的系统参数 88
9.3 技术规格 89
9.3 技术规格 89
9.4 溅射沉积速率 90
9.4 溅射沉积速率 90
9.5 退货 93
9.5 退货 93
9.5.1 概述 93
9.5.1 概述 93
9.5.2 健康与安全宣言 93
9.5.2 健康与安全宣言 93
9.5.3 发送 93
9.5.4 退货地址： 93
9.5.5 污染申报表 94
9.5.5 污染申报表 94
10 指数 95
10 指数 95
图表列表
图 1-1.Q150T 8 前视图
图 1-1.Q150T8 前视图
图 2-1. Q150T 后面板 13
图 2-1. Q150T 后面板 13
图 2-2. 带过滤器的气体接头（零件编号 12842） 安装在吹扫气体入口 14
图 2-2. 带过滤器的气体接头（零件编号 12842） 安装在吹扫气体入口 14
图 2-3.电源插座 引线 15
图 2-3.电源插座引线 15
图 2-4.安装标准载物台 17
图 2-4.安装标准载物台 17
图 3-1. 主屏幕 19
图 3-1. 主屏幕 19
图 3-2.食谱屏幕 20
图 3-2.食谱屏幕 20
图 3-3. 运行正在进行中：已安装 FTM（左）和未安装 FTM（右） 21
图 3-3. 运行正在进行中：已安装 FTM（左） 和未安装 FTM（右）21
图 3-4.腔室通风：安装 FTM（左）和不安装 FTM（右） 21
图 3-4.腔室通风 ：安装 FTM（左）和不安装 FTM（右）21
图 4-1.创建新 配方：选择工艺类型 23
图 4-1.创建新配方： 选择工艺类型 23
图 4-2.输入 新配方名称 23
图 4-2.输入新配方名称 23
图 4-3. 配方参数 24
图 4-3. 配方参数 24
图 4-4.编辑 配方参数 24
图 4-4.编辑配方参数 24
图 4-5. 材质编辑器 26
图 4-5. 材质编辑器 26
图 4-6.编辑材质参数 28
图 4-6.编辑材质参数 28
图 5-1。金属蒸发工艺 31
图 5-1。金属蒸发工艺 31
图 5-2.典型 12nm 受控脉冲e 蒸发 34
图 5-2.典型 12nm 受控脉冲 e 蒸发 34
图 5-3。碳棒成型器（蓝色手柄），用于制备 1.2 毫米（直径）的 34 螺柱
图 5-3。碳棒成型器（蓝色手柄），用于制备 1.2 毫米（直径） 的 34 螺柱
图 5-4.提示重复除气程序或使用涂层 36 处理 d
图 5-4.提示重复除气程序或使用涂层 36 处理 d
图 5-5.用于制备 1.4 毫米（直径）套管的碳棒成型器（红色手柄） 37
图 5-5.用于制备 1.4 毫米（直径） 套管的碳棒成型器（红色手柄）37
图 5-6.楔形工具（零件编号 12097） 37
图 5-6.楔形工具 （零件编号 12097）37
图 5-7。成品楔形棒（左）; 并与 Plain Rod （右） 38
图 5-7。成品楔形棒（左）; 并与 PlainRod （右）38
图 5-8。带默认参数 的 斜坡蒸发电流 profile 38
图 5-8。带默认参数 的斜坡蒸发电流 profile38
图 5-9.正在进行 光圈清理 44
图 5-9. 正在进行光圈清理 44
图 6-1. 系统屏幕 46
图 6-1. 系统屏幕 46
图 6-2.系统日期和时间 设置 47
图 6-2.系统日期和时间设置 47
图 6-3.文件管理器（一般用户 只能访问备份选项） 47
图 6-3.文件管理器（一般用户只能访问备份选项 ）47
图 6-4.关于（左）和 FTM 状态（右）屏幕 48
图 6-4.关于（左） 和 FTM 状态（右） 屏幕 48
图 6-5. 维护 48
图 6-5. 维护 48
图 6-6. 创建用户 50
图 6-6. 创建用户 50
图 6-7。更改用户屏幕 51
图 6-7。更改用户屏幕 51
图 6-8. 溅射参数 （admin mode） 52
图 6-8. 溅射参数 （adminmode）52
图 6-9. 真空参数 （admin mode） 53
图 6-9. 真空参数 （AdminMode）53
图 6-10.硬件参数 （admin mode） 54
图 6-10.硬件参数 （adminmode）54
图 6-11.“处理历史记录”屏幕（左）和“详细视图”选项卡（右） 56
图 6-11。处理历史记录 “屏幕（左）和 ”详细视图“选项卡（右） 56
图 6-12.“进程视图”（左）和“消息视图”（右）选项卡 56
图 6-12。进程视图“（左） 和 ”消息视图“（右）选项卡 56
图 7-1. 溅射插件 58 的俯视图
图 7-1. 溅射插件 58 的俯视图
图 7-2.溅射插件和靶材组件mbly 59
图 7-2.溅射插件和靶材组件 mbly 59
图 7-3. 碳杆嵌件 60
图 7-3. 碳杆嵌件 60
图 7-4.推荐的碳棒形状 61
图 7-4.推荐的碳棒形状 61
图 7-5.Carbon Rod 成型机 （S8650/S8651）） 61
图 7-5.CarbonRod 成型机 （S8650/S8651））61
图 7-6. 碳纤维嵌件 62
图 7-6. 碳纤维嵌件 62
图 7-7.将金属蒸发装置安装在 sert 中，以便向下蒸发 63
图 7-7.将金属蒸发装置安装在 sert 中，以便向下蒸发 63
图 7-8.适用于向上蒸发 的金属蒸发插件 65
图 7-8. 适用于向上蒸发 的金属蒸发插件 65
图 7-9。 发光排放插件 66
图 7-9。 发光排放插件 66
图 7-10.拆卸闭门器 67
图 7-10.拆卸闭门器 67
图 7-11.Rotacota 阶段 68
图 7-11.Rotacota 阶段 68
图 7-12.滑台 69
图 7-12.滑台 69
图 7-13.大型 （102mm） 样品载物台和变速箱 70
图 7-13.大型 （102mm） 样品载物台和变速箱 70
图 7-14. 可调节倾斜平台 71
图 7-14. 可调节倾斜平台 71
图 7-15.FTM（左）; 更换 FTM crystal（中）; FTM 引线（右） 72
图 7-15.FTM（左）; 更换 FTMcrystal（中）;FTM 引线 （右）72
图 7-16. 位置 73 的加长 气缸
图 7-16.位置 73 的加长 气缸
图 7-17.旋转真空龙头 75
图 7-17.旋转真空龙头 75
图 9-1.在 7 x 10-3 mbar 的柱压 下使用金的溅射沉积速率
和 1 x 10-2 mbar 90
和 1 x10-2mbar90
图 9-2。使用 7 x 10-3 的排放压力下使用铬的溅射沉积速率
mbar 和 1 x 10-2 mbar 91
mbar 和 1 x10-2mbar91
图 9-3。在 7 x 10-3 mbar 的排放压力下使用银的溅射沉积速率
和 1 x 10-2 mbar 92
表格列表
表 1 状态指标 18
表 2 Q150T 默认配方 22
表 3 材料及其密度 26
表 4 材料参数 27
表 5 20nm 镀膜的脉冲线蒸发参数 32
表 6 25nm 镀膜的受控脉冲线蒸发参数 33
表 7 SEM 导电层 脉冲棒蒸发参数 35
表 8 气源选项 35
表 9 用于 5nm 涂层 的斜向碳 TEM 参数 40
表 10 用于 SEM 涂层 的定时斜向碳 parameter 41
表 11 5nm 涂层的厚度斜坡碳参数 42
Table 12 Glow discharge treatments 43
表 12 辉光放电处理 43
Table 13 Q150T System options 46
表 13 Q150T 系统选项 46
Table 14 Sputter Parameters (System Properties, page 1) 52
表 14 溅射参数 （系统属性， 第 1 页 ）52
Table 15 Vacuum parameters (System Properties, page 2) 53
表 15 真空参数 （系统属性， 第 2 页 ）53
表 16 硬件参数（系统属性，第 3 页） 55
表 17 Q150T 76 备件
表 18 Q150T S 和 Q150T ES 76 的替代目标
表 19 Q150T 77 的附件
表 20 维护任务 78
表 21 错误混乱 79 岁
表 22 警告消息 81
表 23 编队消息 81
表 24 FTM/定时溅射镀膜参数 82
表 25 碳脉冲/Rod 蒸发配方参数 83
表 26 受控脉冲线 84
表 27 斜坡配方参数 85
表 28 金属蒸发配给配方参数 86
表 29 孔径清洗配方参数 87
表 30 真空关闭特性 87
表 31 系统覆盖属性 88
表 32 技术规格 89
表 33 污染的分类表 94
Q150T S/E/ES 加
健康与安全
使用任何仪器时，安全性都非常重要。在 Quorum，我们努力：
● 为 我们的员工 和客户提供安全的工作环境
● Conduct our business responsibly, in a manner designed to protect the health and safety of customers, employees and the public at large, and to minimise any adverse effects on the environment.
● 以负责任的方式开展业务， 以保护客户、员工和广大公众的健康和安全 ，并尽量减少对环境的任何不利影响。
● Review our operations regularly to achieve environmental, health and safety improvements in line with UK and European Community legislation.
● 定期审查我们的运营 ，以根据英国和欧洲共同体的立法实现环境 、 健康和安全的改善 。
All service work carried out on the equipment should only be undertaken by suitably qualified personnel.
在设备上进行的所有维修工作只能由具有适当资格的人员进行 。
Quorum is not liable for any damage, injury or consequential loss resulting from servicing by unqualified personnel. Quorum will also not be liable for damage, injury or consequential loss resulting from incorrect operation of the instrument or modification of the instrument.
Quorum 不对因招聘合格人员而造成的任何损害、伤害或间接损失负责 。对于因仪器作不当或对仪器进行修改而造成的损害、伤害或间接损失 ，Quorum 概不负责 。
Control of Substances Hazardous to Health (COSHH)
危害健康物质控制 （COSHH）
The EC legislation regarding the“Control of Substances Hazardous to Health”requires Quorum to monitor and assess every substance entering or leaving their premises. Consequently, a completed Health and Safety Declaration form must accompany any returned goods (see Appendix -9.5.5on page94 for the form)
EC 关于 “控制对健康有害的物质” 的立法要求 Quorum 监测和评估进 出其场所的所有物质 。因此， 任何退货都必须附有 一份完整的健康和 安全声明表 （表格见第 94 页附录 -9.5.5 ）
Without this declaration, Quorum reserves the right not to handle the substance/item. Also, in accordance with EC regulations, we will supply on request hazard data sheets for substances used in our instruments.
如无此声明，Quorum 保留不处理该物质/物品的权利 。 此外， 根据 EC 法规，我们将根据要求提供我们仪器中使用的物质的危险数据表。
WEEE Compliance
WEEE 合规性
这 product
产品 is
是 required
必填 to
自 comply
遵守 with
跟 the
这 European
欧洲人 Union’s
联合的 Waste Electrical
废电器 & Electronic
电子的 Equipment (WEEE)
设备 （WEEE） Directive
命令 2002/96/EC.
For full details of our environmental policies, including WEEE, please visit http://www.quorumtech.com/about-us/environmental-policy.html
有关我们的环境政策（包括 WEEE）的完整详情，请访问 http://www.quorumtech.com/about-us/environmental-policy.html.
整合
This Equipment of this Design and manufacture and marked CE, conforms with the requirements of the European Directives EMC 2004/108/EC & LVD 2006/95/EG.
本设计和制造的设备带有 CE 标志 ， 符合欧洲标准 EMC 2004/108/EC&LVD2006/95/EG 的要求 。
质量
Quorum Technologies Ltd operates a quality management system in accordance with ISO 9001.
QuorumTechnologiesLtd 按照 ISO 9001 标准运行质量管理体系 。
Certificate No: 3698/03
证书编号 ：3698/03
Hazard Signal Words
危险信号词
This manual defines hazards using the following key words:
本手册使用以下关键字定义危害 ：
WARNING Potentially hazardous situation or unsafe practice that, if not avoided, could result in
警告 如果不避免， 潜在的危险情况或不安全的做法可能会导致
death or severe injury.
死亡或重伤。
CAUTION Potentially hazardous situation or unsafe practice that, if not avoided, may result in
注意 如果不避免， 可能会导致潜在危险的情况或不安全的做法
minor or moderate injury or damage to equipment.
轻微或中度伤害或设备损坏。
Fail Safe
故障安全
This Equipment will“fail safe”in the presence of excessive RF, Electrostatic Discharge or Mains Transients. While a loss of function could occur under extreme circumstances, the Equipment’s operation will be fully recoverable under normal operating conditions.
本设备在存在过多的射频、 静电放电或电源干扰的情况下将“故障安全 ”。 虽然在极端情况下可能会丧失功能 ，但在正常作条件下， 设备的运行是可以完全恢复的。
Intended Use
有可能的使用
This instrument is designed for laboratory use only and is not intended for use in a production environment.
本仪器仅供实验室使用 ， 不适用于生产环境。
Q150T S/E/ES plus
Introduction
介绍
General Description
一般描述
The Q150T plus system is a versatile sputter coater/turbo evaporator (seeFigure 1-1) for preparing specimens for examination by electron microscopy.
Q150Tplus 系统是一种多功能溅射镀膜机 / 涡轮蒸发器 （ 见图 1-1）， 用于制备用于电子显微镜检查的样品。
With a comprehensive selection of easily interchanged inserts and sample stages, the Q150T can be used to
Q150T 具有多种易于互换的插件和样品台，可用于:
● Sputter coat samples using targets such as chromium or gold
● 使用铬或金等靶材的溅射涂层样品.
● Evaporate support films and replicas for TEM and X-Ray analysis and conducting coatings for SEM using 3mm or 6mm carbon rods or cords
● 使用 3 mm 或 6 mm 碳棒或碳丝蒸发用于 TEM 和 X 射线分析的支撑膜和复制品，以及用于 SEM 的导电涂层.
● Evaporate metals upwards or downwards from a wire basket or molybdenum boat arrangement.
● 从金属丝篮或钼舟布置中向上或向下蒸发金属 。
● Clean aperture strips
● 清洁孔径条.
There are three models in the Q150T range
Q150T 系列有三种型号:
Q150T S plus Sputter coater version only.
仅限 Q150T S plus 溅射镀膜机版本 。
Q150T E plus Carbon/metal evaporation version only.
仅限 Q150T E plus 碳/金属蒸发版本 。
Q150T ES plus Combined system with interchangeable inserts for sputter coating
Q150T ES plus 组合系统 ，带 i 可更换刀片 ，用于溅射镀膜
or carbon/metal evaporation.
或碳/金属蒸发离子。
The instrument is fully adaptable to a wide range of specimens and offers easy loading and unloading of samples. The changeover between sputtering and evaporation inserts is simple. The system is fully automated with a user defined recipe controlling the pumping sequence, preheating, outgassing, pulses for evaporation and sputter current and time.
该仪器完全适用于各种样品 ， 并可轻松装卸样品 。 溅射和蒸发插件之间的转换很简单。该系统是完全自动化的，用户定义的配方控制泵送顺序 、 预热 、 除气 、 蒸发脉冲以及溅射电流和时间。
The Q150T can be fitted with a film thickness monitor (FTM), which measures the coating thickness on a crystal in the chamber, to control the coating applied to the sample. For example, the Q150T can automatically terminate a coating cycle when the required thickness has been achieved.
Q150T 可以配备膜厚监测器 （FTM）， 该监测器可测量腔室中晶体上的涂层厚度 ， 以控制涂覆的涂层到样本中。 例如 ，Q150T 可以在达到所需厚度时自动终止涂层周期 。
Figure 1-1. Front view of the Q150T
图 1-1.Q150T 前视图
Q150T S/E/ES plus
The Q150T features a turbo molecular pump backed by a rotary vacuum pump and controlled by the instrument throughout the fully automatic coating cycle. The system has a recipe allowing the instrument to be pumped down when it is not in use to maintain vacuum specification or it can be terminated to leave the chamber under vacuum. | |
1.2 | Sputter Coating Sputter Coaters are used in Scanning Electron Microscopy to provide an electrically conductive thin film representative of the surface topography of the specimen to be viewed, such films inhibit 'charging', reduce thermal damage, and enhance secondary electron emission. The Q150T S and Q150T ES employ a magnetron sputter target assembly. This enhances the efficiency of the process using low voltages and giving a fine-grain (order of 0.5nm Cr grain size), cool sputtering. The unit features a rotating sample table ensuring even depositions (typically 5nm thickness). The instrument is fitted with a 57mm diameter quick-change target giving optimum consumable cost performance. Various target materials are available. A shutter assembly is fitted as standard, which allows sputter cleaning of oxidising targets. |
1.3 | Carbon Coating Carbon films, because of their mechanical stability, good electrical conductivity, and low background signal are commonly used to prepare samples for Electron Microscopy (EM). Thin films of about 5 nm (50Å) are used for particle support and as an isolating layer in autoradiography. Thicker films are used in Scanning Electron Microscopy (SEM) also for support, in addition to coating for X-Ray Microanalysis. In general, there is a need for all these films to be fine grain, even coating, with uniform and reproducible film thickness. The most common form of deposition is from resistance heated carbon rods. The rods are shaped to achieve high current density with sufficient temperature to cause evaporation. Carbon filaments can also be used, which at high temperature burn quickly, from which has evolved the terminology: Carbon 'Flash' Evaporation. The resulting short coating times and reduced total power input distinguishes it from the somewhat longer process of carbon rod evaporation. Q150T E and ES models feature a multi-change head system for Carbon rod, Carbon fibre and metal evaporation. |
1.4 Metal Evaporation
1.4 金属蒸发
By vaporizing a metal film onto a sample, it is possible to enhance the topographic detail for high resolution analyses by TEM or SEM. This technique is particularly useful in the analysis of biological specimens. The metal evaporant, usually a wire of platinum or gold, is heated and vaporised by a filament (typically made of tungsten).
通过将金属膜汽化到样品上 ， 可以增强形貌细节，以便通过 TEM 或 SEM 进行高分辨率分析 。该技术在生物标本分析中特别有用 。 金属蒸发剂， 通常是铂或金丝 ， 被细丝（通常由钨制成 ） 加热和蒸发 。
For downwards evaporation, evaporants usually in the form of wire: e.g gold, platinum, aluminium, etc are placed directly onto the filament. For upwards evaporation, the evaporant is placed in a 1boat’(typically made of molybdenum or tungsten).
对于向下蒸发， 蒸发剂通常以金属丝的形式出现：例如金、 铂 、 铝等直接放置在灯丝上 。 对于向上蒸发， 将蒸发剂放置在 1 船'（通常是钼或钨的 mad e）中。
The Q150T E and ES can be configured for metal evaporation in an upwards or downwards direction.
Q150TE 和 ES 可配置为向上或向下的金属蒸发 。
1.5 Aperture Cleaning
1.5 孔径清洁
In its metal evaporation configuration, you can use a Q150T E or Q150T ES to clean aperture strips and other electron microscope components. With the component placed in a molybdenum boat, it can be heated to evaporate contaminants.
在其金属蒸发配置中， 您可以使用 Q150TE 或 Q150TES 清洁孔径条和其他电子显微镜组件。将组件放置在钼舟中 ， 可以加热以蒸发污染物。
1.6 Glow Discharge
1.6 辉光放电
Freshly-made carbon supports tend to have a hydrophobic surface which inhibits the spreading of suspensions of particles in negative staining solutions. However, after glow discharge treatment with air, the carbon film is made hydrophilic and negatively charged thus allowing easy spreading of aqueous suspensions.
新鲜制备的碳载体往往具有疏水表面，可抑制颗粒悬浮液在负染色溶液中的扩散 。 然而， 在用空气进行辉光放电处理后 ， 碳膜变得亲水性并带负电，因此允许水性悬浮液轻松铺展 。
Q150T S/E/ES plus
Installation
安装
It is important that this equipment is installed by skilled personnel in accordance with these instructions. Failure to do so may result in damage or injury. 'If in doubt - ASK'.
请务必由熟练的人员按照这些说明安装此设备 ， 否则可能会导致损坏或受伤。“如有疑问 - 询问 ”。
Pre-installation
预安装
Identify a suitable location for the unit:
确定 unit 的合适位置 ：
● Mount the unit on a bench or the recommended trolley. The total weight of the system is 33.4 kg
● 将设备安装在长凳或推荐的手推车上系统的总重量为 33.4 kg.
● The environment should have an ambient temperature range of 15ºC to 25ºC in a non-condensing relative humidity of not more than 75%.
● 环境温度范围应为 15ºC 至 25ºC， 非冷凝相对湿度不超过 75%。
● Sufficient ventilation is required, and positioning should be out of direct sunlight. The system is rated for continuous operation.
● 需要足够的通风 ， 并且位置应避免阳光直射 该系统的额定值为连续运行。
Required Services
所需服务
Argon
氩
Supply for sputtering should be N4.8 (Zero Grade) 99.998% purity capable of supplying 10 psi at 3 litres/min (maximum) for a 4 minute maximum sputter cycle time (some instruments may have specially extended sputter cycles). The system is supplied with 3m plastic tubing 3mm I.D. x 6mm O.D. from quick release connectors on the rear of the unit. It is the customer’s responsibility to connect from this hose to the pressure regulator set at approximately 10psi, from gas bottle or plant supply. Typically, a system will use 0.2 litres of Argon for a 4 minute sputter cycle
溅射备件应为 N4.8（零级）99.998% 纯度，能够以 3 升/分钟（最大值）的速度提供 10 psi，最长溅射循环时间为 4 分钟（某些仪器可能具有特别延长的溅射循环时间）。该系统配有 3m 塑料管，内径 3mm x 外径 6mm，来自设备后部的快速释放连接器客户负责从此软管连接到设置在大约 10psi 的压力调节器上，来自气瓶或工厂电源通常，系统将使用 0.2 升氩气进行 4 分钟的溅射循环.
If bottle supply is adjacent it can be isolated locally, if not or plant supply, local isolation valves should befitted. | |
Nitrogen Supply for purging should be N4.8 (Zero Grade) 99.998% purity 10 psi 3 litres per minute (maximum) for 60 seconds. The system is supplied with 3 metres plastic tubing 3mm I.D. x 6mm O.D. from quick release connectors to be fitted to pressure regulator set at approximately 10psi, bottle or plant supply. | |
If bottle supply is adjacent it can be isolated locally if not or plant supply, local isolation valves should befitted. | |
Pressure Regulators are Customer Supply, Nitrogen is recommended for Purging for Economy, Argon must be provided for Sputtering, it can also be used for Purging in the event of Nitrogen purge gas not readily available.
减压阀由客户供应 ， 建议使用氮气进行经济吹扫 ，溅射 g 必须提供氩气 ， 在氮气吹扫气体不易获得的情况下 ， 它也可以用于吹扫。
Typical regulators suitable for Argon and Nitrogen are the C106X/2 series available
适用于氩气和氮气的典型稳压器是 C106X/2 系列，可用
from BOC
来自 BOC
http://www.boconline.co.uk/en/products-and-supply/speciality- equipment/regulators/two-stage-regulators/c106x2-series/c106x-2-series.html
http：//wwwBocOnlineCoUK/en/products-and-supply/speciality-equipment/regulators/two-stage-regulators/c106x2-series/c106x-2-series.html
Electrical supply
电力供应
90-240V, 50/60Hz, 1350VA, including pump.
90-240V，50/60Hz，1350VA， 包括泵。
Q150T S/E/ES plus
Vacuum Pump
真空泵
Rotary pump complete with vacuum hose & oil mist filter (35 litre/min; 2 m³/hr).
旋转泵配有真空软管和油雾过滤器 （35 升 / 分钟 2 立方米/ 小时 ）。
2.2 Unpacking
2.2 开箱
1. Remove the Instrument from its packing and place it in its operational position
1. 从包装中取出仪器并将其放在作位置.
CAUTION! DON’T TRY TO LIFT THE UNIT BY YOURSELF: IT WEIGHS 33.4KG. GET SOMEONE TO HELP YOU MOVE IT. |
2. Carry out a visual inspection to check for any signs of transit damage
2. 进行目视检查，检查是否有任何运输损坏的迹象.
3. Remove the Accessories Pack, and check contents against Q150T Accessories Pack shipping list
3. 取出配件包，并根据 Q150T 配件包发货清单检查内容.
CAUTION! Do Not attempt to lift the lid from the chamber. Unlatch the grey top cover and remove the 2 transit screws retaining the top plate assembly. The set screw and the transit plate should be retained with the instrument accessories in case further transit of the instrument is necessary. |
4. Ensure that all areas of the Instrument are free from loose packaging material. Check specifically the instrument chamber, glass cylinder, and gaskets. (Do not use vacuum grease on gaskets).
4. 确保仪器的所有区域都没有松散的包装材料。 特别检查器械室 、 玻璃圆筒和垫圈 （ 不要在垫圈上使用真空润滑脂 ）。
5. If your unit includes a vacuum pump, carry out preliminary checks in accordance with the manufacturer’s recommendations
5. 如果您的设备包含真空泵，请按照制造商的建议进行初步检查.
If you are intending to use an existing or alternative vacuum pump, and have any difficulty with these connections, please contact our technical support. |
Q150T S/E/ES plus
2.3 Connections
2.3 连接
Installation consists of the following steps:
安装包括以下步骤 ：
● Connect gas supplies (see below).
● 连接气体供应 （ 见下文 ）。
● Make electrical connections (see page14)
● 进行电气连接（参见第 14 页）.
● Connect the vacuum pump (see page16)
● 连接真空泵（参见第 16 页）.
● Install the sample stage (see page17)
● 安装样品台（参见第 17 页）.
If you want to install a different insert than that supplied with your instrument, please see page 57. If you have ordered a Q150T ES, the instrument will be fitted with the sputter insert, unless you have specifically requested another configuration.
如果您想安装与仪器随附的 in sert 不同的 in-sert， 请参见第 57 页。 如果您订购了 Q150TES，则仪器将配备溅射插件， 除非您特别要求其他配置。
Figure 2-1 shows the location of connectors and switches on the rear panel of the Q150T.
图 2-1 显示了 Q150T 后面板上连接器和开关的位置 。
AUX POWER INLET PUMP OUTLET USB GAS INLETS VACUUM CONNECTION | ||||||
Ethernet | Power inlet with | Power supply for | Copy/backup | Argon1 | Nitrogen2 | Rotary pump |
network | integral On/Off | rotary pump | process data | 0.3 bar | 0.3 bar | vacuum |
connection | rocker switch | allowing control by instrument | and log files to USB flash drive | (4 psi) | (4 psi) | connection |
Figure 2-1. Q150T Rear Panel
图 2-1.Q150T 后 P 轴
(1). S versions only
（1）. 仅限 S 版本
(2). If using air instead of Nitrogen, fit filter part no. 12842 see“Gas Connections”, below.
（2）. 如果使用空气代替氮气，请安装部件号 12842 的过滤器，请参见下面的 “ 气体连接”。
WARNING!
警告！
UNDER
下 NO
不 CIRCUMSTANCES
情况 下 SHOULD
应该 ANY
任何 OTHER
其他 CONNECTIONS
连接 OR OUTLETS/INLETS BE USED
或使用出口/入口 FOR ANY
对于任何 OTHER
其他 EQUIPMENT
设备 OR
或 SERVICES.
服务业。
Q150T S/E/ES plus
2.3.1 Gas Connections
2.3.1 气体连接
1. Connect a suitable argon supply at a regulated input of 0.3bar (4psi) to the quick connect Argon gas connector on the rear panel (see Figure 2-1. If you prefer, you can use argon for both process and purge supplies. To do so, install a 'T' piece across both gas inlets
1. 将 0.3bar （4psi） 稳压输入的合适氩气源连接到后面板上的快速连接氩气连接器（参见图 2-1。如果您愿意，可以将氩气用于工艺和吹扫备件。为此，请在两个进气口上安装一个“T”形件.
2. Connect a suitable nitrogen supply at a regulated input of 0.3bar (4psi) to the quick connect Nitrogen connector on the rear panel. Air may be used in place of nitrogen for venting but it is important to fit the filter (part no. 12842) to prevent ingress of dust (see Figure 2-2). Failure to connect this filter could prevent the system venting at the end of a cycle.
2. 将合适的氮气供应以 0.3bar （4psi） 的调节输入连接到控制面板上的快速连接氮气连接器 。 可以使用空气代替氮气进行排气 ，但安装过滤器 （ 部件号 12842） 以防止灰尘进入 （见图 2-2） 未能连接此过滤器可能会阻止系统在循环结束时排气。
Connectors are push-fit and will 'snap' into a locked position. To release a connector, depress the metal tongue.
连接器是推入式的 ，可以 “卡入” 锁定位置。为了松开连接器， 请按下金属舌片。
Figure 2-2. Gas connectors with filter (part no. 12842) fitted to purge gas inlet
图 2-2.带过滤器的气体接头（部件号 12842）安装在吹扫气体入口处
Q150T S/E/ES plus
2.3.2 Electrical Connections
2.3.2 电气连接
1. 使用随附的电缆将仪器连接到合适的接地单相交流电源引线应配备适合您所在国家/地区的插头 。 确保插头位置牢固 。
WARNING! - EARTH CONNECTION
警告！- 接地连接
This Equipment must be Earthed and fitted with the correct lead for the country of operation. This Equipment is normally supplied from 3 pin supply including Earth. For fuse information, refer toTable 32.
本设备必须接地 ， 并配备适用于作国家/地区的正确引线。本设备通常由 3 引脚电源供电，包括接地。 有关熔断器的信息，请参阅表 32。
2. Connect the rotary pump power lead to the Pump Output connector on the rear panel (see Figure 2-1). If the rotary pump has its own switch, ensure that this is set to the‘On’position (if applicable, program the pump to turn on automatically when mains power is applied).
2. 将旋转泵电源线连接到后面板上的泵输出连接器 （见图 2-1） 如果旋转泵有自己的开关， 请确保这是 设置为 “On” 位置 （ 如果适用 ，将泵编程为在接通市电时自动打开 ）。
WARNING! - PUMP OUTPUT Check that the Power Output is suitable for the rotary pump. The Pump Output is intended for connection to the pump supply only and provides the electrical supply voltage at a maximum of 4 Amps. |
Pin2 接地
Pin 3
引脚 3
Neutral
中性
PIN | UK AND EUROPE | U.S.A. AND CANADA |
Pin 1 ( Live or Hot) | Brown | Black |
Pin 2 ( Earth ) | Green / Yellow | Green |
Pin 3 ( Neutral) | Blue | White |
Figure 2-3. Power outlet lead wiring
图 2-3.Power outletlead wiring
Q150T S/E/ES plus
2.3.3 Aux Network Connection
2.3.3 辅助网络连接
To link the Q150T to your network, use a standard CAT5/5e cable with RJ45 network connectors to connect the AUX Network port directly to your computer’s network port or a network hub/switch.
要将 Q150T 连接到您的网络 ， 请使用带有 RJ45 网络连接器的标准 CAT5/5e 电缆将 AUX 网络端口直接连接到计算机的网络工作端口或网络集线器/switch.
2.3.4 USB Connection
2.3.4USB 连接
Connect a USB flash drive to copy and backup process data and log files for viewing on a computer.
连接 USB 闪存驱动器以复制和备份过程数据和日志文件 ，以便在计算机上查看 。
2.3.5 Vacuum Connections
2.3.5 真空连接
1. If you are using an existing or alternative vacuum pump, and have any difficulty with connections, please ask for advice.
1. 如果您使用的是现有或替代的真空泵 ，并且在连接方面遇到任何困难 ， 请 k 寻求建议。
2. If the instrument is NOT going to be vented into an extraction system, fit an Oil Mist Filter with metal adapter to the outlet of the vacuum pump. Please refer to the manufacturer’s instructions.
2. 如果仪器不打算排入抽气系统 ，请在真空泵的出口处安装一个带有金属适配器的油雾过滤器 。 请参阅制造商的说明 。
3. Ensure that the vacuum pump is filled with the correct oil
3. 确保真空泵注满正确的油.
4. If the vacuum pump is fitted with an on/off switch, ensure that it is set to the 'on' position to allow the instrument to control its power supply.In some cases, it may be necessary to program the rotary pump to come on when mains voltage is applied.
4. 如果真空泵配有开 / 关开关 ， 请确保将其设置为 “开” 位置，以便仪器控制其电源 。 在某些情况下 ， 可能需要对旋转泵进行编程 ，使其在施加电源电压时启动 。
6. Connect the flexible vacuum hose to the spigot on the rear panel using the hose clip provided. This is a push-on fit to the Instrument. Ensure that this is firmly in place to the full length of the spigot
6. 使用提供的软管夹将柔性真空软管连接到后面板上的龙头。这是对乐器的推入式安装。确保将其牢固地固定在龙头的整个长度上.
A rotating vacuum spigot is available for more convenient hose connection in installations where the instrument is to be located close
旋转真空龙头可用于在仪器靠近的安装中更方便地连接软管
to a back wall (see page73)
到后墙（见第 73 页）.
Q150T S/E/ES plus
2.4 Fitting the Standard Stage
2.4 安装标准舞台
The Q150T is supplied with a standard stage (10067). For installation instructions for other stages, see page57. To install the standard stage:
Q150T 配有标准载物台 （10067）。 有关其他 stages 的安装说明 ， 请参见第 57 页。 要安装标准阶段，请执行以下作：
1. Ensure that the instrument is vented and in standby mode
1. 确保仪器通风并处于待机模式.
2. Open the top cover fully so it rests against its backstop
2. 完全打开顶盖，使其靠在逆止器上.
3. If there is already a stage in place, remove it by lifting carefully upwards
3. 如果已经有一个载物台，小心地向上抬起将其移除.
4. Fit the standard stage by locating its shaft into the top of the stage rotation drive spigot protruding from the baseplate and with a twisting motion pushing it gently down until the collar around the shaft rests on top of the drive spigot (see below).
4. 将标准载物台的轴定位在载物台的顶部 ， 旋转驱动从底板伸出的龙头 ， 然后以扭转动作轻轻推动它， 从而安装标准载物台向下直到轴周围的轴环靠在驱动龙头的顶部 （ 见下文 ）。
标准载物台
Height-adjusting collar
高度调节项圈
Rotation drive spigot
旋转驱动龙头
Figure 2-4. Fitting the standard stage
图 2-4.安装标准舞台
You can adjust the height of the stage above the base plate by moving the collar up or down the shaft. Unfasten the M3 screw with a hexagonal key, slide the collar to the required position and retighten the M3 screw.
您可以通过在轴上上或下移动轴来调整平台在底板上的高度 。 用六角键松开 M3 螺丝 ， 将套环滑到所需位置，然后重新拧紧 M3 螺丝。
For maximum distance between the stage and the target, remove the collar so that the underside of the stage rests on the top of the drive spigot. To reduce the distance between the stage and target, fit the stage with the alternative long shaft (10214 – supplied with stage).
为了获得载物台和目标之间的最大距离 ，请取下项圈 ， 使 stage 的底部位于驱动龙头的顶部 。 为了减少载物台和目标之间的距离 ，请使用备用长轴 （10214 - 随载物台提供 ）安装载物台 。
When using small 1/8”pin stubs, it is advisable to unscrew the stage and fit it upside down for easy access to the stub
使用小的 1/8 英寸针头时，建议拧下载物台并将其倒置安装，以便于接触 stub.
Note that the Q150T’s default tooling factors are based on a stage height of 60mm from the base plate
请注意，Q150T 的默认工具系数基于距底板 60 毫米的平台高度.
Q150T S/E/ES plus
2.5
2.6
Status Indication
状态指示
The front panel houses a status indicator (see Figure 1-1). The displayed colour represents the status of the system as described below.
前面板上有一个状态指示灯 （ 见图 1-1）。 显示的颜色表示系统的状态，如下所述 。
Table 1 Status indicator
表 1 状态指示灯
Status indicator display | Instrument condition |
Blue (slow flash) | Initialising |
Blue | Idle |
Green | Pumping |
Purple | Coating |
Green (flashing) | Finished/Venting |
Red (flashing) | Error |
Audio
音频
At the completion of a recipe process, the instrument emits a‘beep-beep’sound. This may be switched off with the Sound button on the Home screen (seeFigure 3-1)
在配方过程完成时，乐器会发出“哔-哔”的声音这可以通过主屏幕上的“声音”按钮关闭（参见图 3-1）.
Q150T S/E/ES plus
3 Operation
3 手术
This chapter describes the basic operation of the Q150T. For more advanced use, please see below andApplication Guidelineson page29. The status of the system is indicated by the status bar (see page18)
本章介绍 Q150T 的基本作。有关更高级的使用，请参阅下文和第 29 页的申请指南。系统状态由状态栏指示（参见第 18 页）.
3.1 Switching On for the First Time
3.1 第一次开机
1. Ensure that you have completed the installation as described in the previous sections.
1. 确保您已完成前面部分所述的安装 。
2. Switch the instrument on using the rocker switch located on the rear panel. The front panel LCD display should illuminate and show the initialising message.
2. 使用位于后面板上的摇臂开关打开仪器前面板 LCD 显示屏应亮起并显示初始化消息。
3. Once the instrument hardware and software has initialised, the Home screen is displayed (seeFigure 3-1)
3. 仪器硬件和软件初始化后，将显示主屏幕（参见图 3-1）.
Function buttons
功能按钮
Chamber pressure display on/off
腔室压力显示开/关
Home
家
Sound on/off Username Help Log in/out
声音开/关 U 系列 帮助 登录 /注销
Figure 3-1. Home screen
图 3-1. 主屏幕
3.2 The Home screen
3.2 主屏幕
The Standby screen has five function buttons:
待机屏幕有五个功能按钮：
● History (see page56)
● 历史 （ 见第 56 页）
● Recipes (see page22)
● 食谱 （ 见第 22 页）
● System (see page46)
● 系统 （ 见第 46 页）
● Login (see page51)
● 登录 （ 见第 51 页）
● Materials (see page26)
● 材料 （ 见第 26 页）
The menu bar has buttons for commonly used task such as logging in/out, accessing the online Help system, and returning to the Home screen.
菜单栏包含用于常用任务的按钮 ， 例如登录/注销、 访问在线帮助系统和返回主页 screen。
The chamber pressure button toggles the pumping/vacuum information display across the bottom of the screen (see Figure 3-3). This shows the chamber pressure bar graph and reading, and turbo speed indicator.
腔室压力按钮切换屏幕底部的抽气/真空信息显示 （见图 3-3） 这显示了腔室压力条形图和读数，以及涡轮速度指示器。
Q150T S/E/ES plus
3.3 Running a Recipe
3.3 运行 Recipe
Before you can run a recipe, ensure you have:
在运行配方之前， 请确保您已：
● Completed the installation as described on page11.
● 按照第 11 页的说明完成安装 。
● Switched on the instrument (see section19)
● 打开仪器（参见第 19 节）.
● Loaded a sputter/coating target or loaded an evaporation source (see page57). To run a recipe:
● 加载溅射 / 镀膜靶材或加载蒸发源 （ 参见第 57 页） 要运行配方：
1. Load your sample onto the centre of the sample stage
1. 将样品加载到样品台的中心.
2. Close the top cover assembly and press it firmly down to secure the latch
2. 关闭顶盖组件并用力向下按压以固定闩锁.
3. Tap on the Recipes button (seeFigure 3-2)
3. 点击“食谱”按钮（见图 3-2）.
Figure 3-2. Recipes screen
图 3-2.Recipes （配方） 屏幕
4. The Q150T has several default recipes for common tasks as shown in Table 2.
4. Q150T 有几个常见任务的默认配方 ， 如表 2 所示 。
水龙头 on
上 the
这 name
名字 of
之 the
这 recipe
食谱 you
你 want
要 to
自 run
跑 (you
（您 may
哎 need
需要 to
自 scroll
滚动 down
下 the
这 list
列表 to
自 find
找到 it
它).
Recipes ready to run are listed at the top and are ordered according to how often they are used
准备运行的配方列在顶部，并根据其使用频率进行排序.
If the run
如果运行 arrow (
箭头 （) is grey rather than
） 是灰色的，而不是 green the pr
绿色公关ocess
口服 cannot be
不能 run as the correct head has n
运行，因为正确的 head 有 not been fitted.
安装。
5. Tap on
5. 点击
这 Q150T starts
开始 pumping
泵 the
这 sample
样本 chamber
室. The
这 progress
进展 of
之the
这 run
跑 is
是 shown through
显示方式 a series
系列 of on-screen
在屏幕上 messages.
消息。
6. 6. During outgassing, a Skip to Process prompt gives you the option to commence directly with the process, avoiding the Pump Hold Time period as set in the system’s Vacuum Parameters (see page53). Outgassing improves the quality of the coating but can be set to zero as a default.
6. 6. 在除气过程中 ，SkiptoProcess（ 跳至过程）提示允许您选择直接开始该过程，从而避免在系统的 Vacuum（真空 ）中设置的 Pump Hold Time（泵保持时间）时间段参数 （ 参见第 53 页） 脱气可以提高涂层的质量 ， 但可以默认设置为零 。
7. The screen shows the vacuum and control parameters and, if an FTM is installed, the coating thickness achieved (Figure 3-3)
7. 屏幕显示真空和控制参数，如果安装了 FTM，则显示达到的涂层厚度（图 3-3）.
Q150T S/E/ES plus
Figure 3-3. A run in progress: with FTM installed (left) and without FTM (right)
图 3-3.正在进行的运行：已安装 FTM（左）和未安装 FTMM（右）
8. If you want to stop a run while it is in progress, tap on ea
8. 如果您想在运行正在进行时停止运行，请点击 ea.
9. At the completion of the run, the Q150T begins to vent the chamber (see Figure 3-4). Full details of deposition are logged in the instrument’s History - see page56)
9. 运行完成后，Q150T 开始对腔室进行排气（见图 3-4）沉积的全部详细信息记录在仪器的历史记录中 - 见第 56 页）.
Figure 3-4. Venting the chamber: with FTM installed (left) and without FTM (right).
图 3-4.腔室通风：安装 FTM（左）和不安装 FTM（right）。
10. Click on the OK button to return to the Recipes screen. You can now remove your sample and set up another run.
10. 单击 “确定 ” 按钮返回 Recipes 屏幕。 您现在可以删除样品并设置另一次运行。
Q150T S/E/ES plus
4 Working with Recipes
4 使用配方
The operation of the Q150T is controlled by a recipe. This describes the sequence of operations in sputter coating or evaporation cycles. You can also create recipes to carry out simple operations such as pumping or venting the sample chamber. Many of the basic operations such as pumping, outgassing or venting the chamber occur automatically as does the sequence in which they occur.
Q150T 的作由配方控制 。 这描述了溅射镀膜或蒸发循环中的作顺序 。 您还可以创建配方来执行简单的作 ， 例如泵送或放空样品室。 许多基本作 ， 如抽气、 除气或对腔室进行排气 ， 它们发生的顺序都会自动占用 。
The Q150T is supplied with several default recipes to perform the basic and most common operations (seeTable 2)
Q150T 提供了几个默认配方，用于执行基本和最常见的作（见表 2）.
Table 2 Q150T Default Recipes
表 2Q150T 默认配方
RECIPE NAME | PURPOSE | |
Vent Vent Chamber | Vent sample chamber | |
5nm Chromium* FTM Terminated Sputter | Sputter coating run using Chromium target terminated by FTM at a coating thickness of 5nm (see page29) | |
Timed Chromium Timed Sputter | Sputter coating run using Chromium target terminated by time | |
Aperture Cleaning Aperture Cleaning | Clean hydrocarbon contamination from SEM & TEM apertures (see page44) | |
Glow Discharge -ve DC Glow Discharge | Etching / cleaning and modifying surfaces to be hydrophilic | |
Glow Discharge +ve DC Glow Discharge | Etching / cleaning and modifying surfaces to be hydrophobic | |
Metal Evaporation Metal Evaporation | Metal evaporation terminated by time. | |
Pulsed Rod Evaporation Pulsed Rod Evaporation | Evaporation using carbon rod with the coating built up of multiple thin layers using short current pulses (see page32) | |
Pulsed Cord Evaporation Pulsed Cord Evaporation | Evaporation using carbon cord with the coating built up of multiple thin layers using short current pulses (see page32) | |
10nm Ramped Carbon Thickness Ramped Carbon | Evaporation using carbon rod and a ramped evaporation current, terminated by FTM at a coating thickness of 10nm (see page42) | |
Timed Ramped Carbon Timed Ramped Carbon | Evaporation using carbon rod and a ramped evaporation current, terminated by time (see page38) | |
Controlled Pulsed Cord* Controlled Pulsed Cord | Evaporation using carbon cord with the coating built up of multiple thin layers generated by short current pulses (see page35) | |
Pump Down | Evacuate chamber to maintain vacuum specification. Manual venting required. | |
* Recipe only present on systems equipped with FTM.
* 配方仅存在于配备 FTM 的系统上
To customise recipes for your own applications, you can:
要为您自己的应用程序自定义配方 ，您可以 ：
● Create a new recipe
● 创建新配方
● Edit an existing recipe
● 编辑现有配方
● Make a copy of an existing recipe
● 复制现有食谱
● Rename an existing recipe
● 重命名现有配方
● Delete a recipe
● 删除配方
Q150T S/E/ES plus
4.1.1 Creating a New Recipe
4.1.1 创建新的 Recipe
To create a new recipe:
要创建新配方：
1. From the Home screen, tap on the Recipes button. The Recipes screen is displayed (seeFigure 3-2)
1. 在主屏幕上，点击配方按钮。此时将显示 Recipes 屏幕（参见图 3-2）.
2. Tap on
2. 点击
这 Choose
选择 Process
过程 Type
类型 screen
屏幕 is
是 displayed
显示 (see
看Figure
数字4-1).
Figure 4-1. Creating a new recipe: choosing the process type
图 4-1.创建新配方：选择工艺类型
3. Choose
选择 the
这 type
类型 of
之 process
过程, for
为 example
例, Timed
定时 Sputter
溅射. You
你 may
五月 need
需要 to
自 scroll
滚动through the
通过 list to find the type
list 查找类型 of
之 process you
处理你 want.
要。See page
见页面82for
为 a list
列表 of
之 all
都 the
这 available
可用 recipes.
食谱。 Note
注意 that th
那个e recipes
食谱listed
上市 are
是 different
不同 for
为 Q150TE
TE 公司, Q150
、Q150TS
TS 系列 and
和 Q150TES
储热 models
模型.
4. Enter a name for the recipe using the on-screen keyboard
4. 使用屏幕键盘输入配方名称.
Figure 4-2. Entering a new recipe name
图 4-2. 输入新配方名称
5. Tap on the Enter button to confirm the recipe name. Alternatively, tap on
5. 点击 Enter 按钮确认配方名称或者点击
自 close the
关闭 screen wit
屏幕机智hout
豪特 creating
创建 a new
新增功能 recipe.
食谱。
6. The new recipe is created using the default settings for the chosen process type.
6. 新配方是使用所选工艺类型的默认设置创建的 。
7. Now refer to the Editing Recipe Parameters section, below
7. 现在，请参阅下面的 Editing Recipe Parameters 部分.
4.1.2 Editing Recipe Parameters
4.1.2 编辑配方 Pa 辐射
1. To edit a recipe from the Recipes screen, tap on the
1. 要从 Recipes 屏幕编辑配方 ， 请点击
象征 alongside
旁边 its name
它的名字. The
这 recipe
食谱’s properties
性能 are
是 displayed
显示. If
如果 you
你 have
有 just
只 created
创建 a new
新增功能recipe, this
recipe 中，这个 screen
屏幕 is
是 displayed
显示 after you
在您之后 have
有 enter
进入ed
艾德 a name.
名字。
Figure 4-3. Recipe Parameters
图 4-3. 配方 Pa 射线
2. Properties are displayed across two pages. Tap on the numbered buttons
2. 属性显示在两个页面上。点击编号但吨数
自 move
移动 between
之间 the
这 paged
呼 screens
屏幕. The
这 first
第一 page
页 lists
列表 the
这 properties
性能 that
那define
定义 and
和 control
控制 the recipe
食谱 type.
类型。 The
这 second page lists
第二页列表 the
这 default
违约 system
系统 parameters
参数 (see
（参见 page
页51) that are
他们是 applied to the
应用于 recipe.
食谱。3. To
自 edit
编辑 a parameter
参数, for
为 example
例 Sputter
溅射 Current
当前, tap
水龙头 on
上 it
它.
If a parameter is shown in grey text, you do not have the necessary user privileges to edit it. See page54for details.
如果参数以灰色文本显示， 则表示您没有编辑它所需的用户权限。参见第 54 页的 details。
4. Change the value using the onscreen keypad. Note that the screen shows the allowed values for the parameter.
4. 使用屏幕上的键盘更改值请注意 ， 屏幕会显示参数的允许值 。
5. Tap on the Confirm button to apply the change or on the Cancel button to restore the previous value.
5. 点击 确认按钮应用更改，或点击 取消按钮恢复以前的 value。
Figure 4-4. Editing a Recipe Parameter
图 4-4. 编辑配方参数
6. Edit other parameters as required
6. 根据需要编辑其他参数.
7. Tap on
7. 点击
自 return
返回 to
自 the
这 recipes
食谱 list
列表 or
或 on
上 to
自 display
显示 the
这 Home
家 screen
屏幕. To
自 see
看 a list
列表 of the
的 parameters
参数 used
使用 in
在 recipes
食谱 see
看 page
页82.
Q150T S/E/ES plus
4.1.3 Copying a Recipe
4.1.3 复制配方
To copy an existing recipe:
要复制现有配方：
1. From the Recipes screen, tap on the
1. 在 “配方” 屏幕中， 点击
符号
2. Tap on
2. 点击
3. Click on the OK button to confirm the action
3. 点击 OK 按钮确认作.
A copy of the recipe is created with the name“copy_< recipe name>”. You may now want to rename (see below) and edit the recipe.
将创建名称为“copy_<recipename>” 的配方副本 。 您现在可能想要重命名 （见下文 ） 和编辑配方。
4.1.4 Renaming a Recipe
4.1.4 重命名配方
To rename an existing recipe:
要重命名现有配方：
1. From the Recipes screen, tap on the
1. 在 “配方” 屏幕中， 点击
符号
2. Tap on
2. 点击
使用屏幕键盘键入配方的新名称.
3. Click on the OK button to confirm the action
3. 点击 OK 按钮确认作.
The recipe is renamed in the recipe list.
配方将在 recipe 列表中重命名 。
4.1.5 Deleting a Recipe
4.1.5 开发 Recipe
To delete an existing recipe:
要删除现有 recipe：
1. From the Recipes screen, tap on the
1. 在 “配方” 屏幕中， 点击
符号
2. Tap on
2. 点击
3. Click on the OK button to confirm the action
3. 点击 OK 按钮确认作.
The recipe is deleted.
配方将被删除。
Q150T S/E/ES plus
4.2
4.3
Materials
材料
The software contains a database of the most common elements and alloys used in sputtering and evaporation applications (see Table 3). The embedded density information is used to calculate film thickness.
该软件包含一个数据库 ，其中包含溅射和蒸发应用中最常用的元素和合金 （见表 3） 嵌入的密度信息用于计算薄膜厚度。
Table 3 Materials and their density
表 3 材料及继承人密度
Material | Density, g/cm3 |
Aluminium | 2.70 |
Carbon | 2.25 |
Titanium | 4.54 |
Chromium | 7.19 |
Nickel | 8.90 |
Copper | 8.96 |
Silver | 10.50 |
Palladium | 12.02 |
Gold / Palladium (Au/Pd) (80:20 mix) | 17.86 |
Tungsten | 19.30 |
Gold | 19.32 |
Platinum / Palladium (Pt/Pd) (80:20 mix) | 19.56 |
Platinum | 21.45 |
Iridium | 22.40 |
User Defined allowable range | 1.00 - 23.00 |
The Materials list
“材质”列表
To list the materials currently in the database, tap on the Materials button on the Home screen (seeFigure 4-5)
要列出数据库中的当前材料 ， 请点击 材料主页屏幕上的按钮 n（ 见图 4-5） .
Figure 4-5. Materials Editor
图 4-5. 材质编辑器
● To create a new material, tap on
● 要创建新材料 ， 请点击
（ 参见 Creatinganewmaterial4.3.1）。
● To edit a material, tap on
● 要编辑材质 ， 请点击
（请参阅编辑材质参数 4.3.2）.
● To delete a material, tap on its name and then tap on
● 要删除素材 ， 请点击其名称 ， 然后点击
Q150T S/E/ES plus
4.3.1 Creating a New Material
4.3.1 创建新的 M 天线
To create a new material:
要创建新材质：
1. Tap on the Materials button on the Home screen. The Select Material screen is displayed (seeFigure 4-5)
1. 点击主屏幕上的“材料”按钮显示“选择材料”屏幕（见图 4-5）.
2. Tap on
2. 点击
3. Enter a name for the material using the on-screen keyboard
3. 使用屏幕键盘输入材质的名称.
4. Tap on the Enter button to confirm the new material’s name.
4. 点击 Enter 按钮以确认新材料的名称 。
Alternatively, tap on
或者，点击
自 close the
关闭 screen without
无屏幕 creating a
创建 new
新增功能 materi
材料al.
铝。
5. Now refer to the Editing Material Parameters section, below
5. 现在，请参阅下面的 Editing Material Parameters 部分.
4.3.2 Editing Material Parameters
4.3.2 编辑材质参数
Each material is defined by the parameters shown inTable 4:
每种材料都由表 4 中所示的参数定义 ：
Table 4 Material parameters
表4 材质参数
Name | Default Value | Minimum Value | Maximu m Value | Comment |
Density | 10 | 1 | 30 | |
Material Type | Oxidising | Noble | Oxidising | |
Sputter Current | 50 | 1 | 150 | |
Clean Current* | 150 | 100 | 150 | |
Material Tool* | 0.1 | 10 | ||
Sputter cleaning mode** | Timed | Specifies how the material will be cleaned. Options are: Timed Continuous sputter for fix time. Pulse above Cycle plasma until target voltage is above that specified in Sputter stop cleaning at Pulse below Cycle plasma until target voltage is below that specified in Sputter stop cleaning at | ||
Sputter stop cleaning at (Volts)** | 250 | 90 | 600 | Target voltage that needs to be achieved before cleaning is completed and the coating starts. Only used during pulse cleaning of target. |
Turbo Sputter Bleed Vacuum (mbar)* | 1 x 10-2 | 5 x 10-4 | 0.5 |
* Requires Admin level privileges to edit this parameter.
* 需要管理员级别的权限才能编辑此参数。
** Changes to these parameters will need to be carried out by a Quorum agent.
** 对这些面值表的更改需要由 Quorum 代理进行。
Q150T S/E/ES plus
To edit a material:
要编辑材质：
1. Tap on the
1. 点击
符号 ， 并显示材质的属性 。 如果您刚刚创建了新材质 ， 则在您输入名称后会显示此屏幕 。
2. To edit a parameter, tap on its value
2. 要编辑参数，请点击其值.
3. Change the value using the onscreen keypad. Note that the screen shows the allowed values for the parameter.
3. 使用屏幕上的键盘更改值请注意 ， 屏幕显示参数的允许值 。
4. Tap on the Confirm button to apply the change or on the Cancel button to restore the previous value.
4. 点击 确认按钮应用更改 ，或点击 取消按钮恢复以前的 value。
5. Edit other parameters as required
5. 根据需要编辑其他参数.
6. Tap on
6. 点击
返回材质列表，或打开以显示主屏幕.
Figure 4-6. Editing Material Parameters
图 4-6.编辑材质参数
4.3.3 Deleting a Material
4.3.3 删除材质
To delete a material, tap on its name and then tap on
要删除材质，请点击其名称 ，然后点击
5 Application Guidelines
5 申请指南
This section describes the recipes and their typical applications.
本节介绍 Recipes 及其典型应用。
5.1 Timed Sputter
5.1 定时 Sputter
Suitable for the following applications:
适用于以下应用 ：
● SEM coatings for tungsten emission SEM
● 用于钨发射 SEM 的 SEM 涂层.
● High resolution SEM coatings for field emission SEM
● 用于场发射 SEM 的高分辨率 SEM 涂层.
● General thin film coatings
● 通用薄膜涂层.
● Target materials: Au, Au/Pd or Pt
● 靶材材料：Au、Au/Pd 或 Pt
5.1.1 Tungsten SEM work
5.1.1 钨 SEM 工作
For this type of work, the aim is to achieve a typical thickness of 10-20 nm from a gold target. Figure 9-1 shows the deposition rate vs current graph for gold. With a current of 20mA, a deposition rate of 20nm/minute is typically achieved (assuming that the sample height is set to the default height of 60mm and the vacuum is 1x10-2 mbar).
对于此类工作 ， 目标是从金靶材获得 10-20nm 的典型厚度 。 图 9-1s 金的沉积速率与当前图表如何。 在 20mA 的电流下 ， 通常可实现 20nm/min 的沉积速率 （ 假设样品高度设置为默认高度 60mm 和真空度为 1x10-2 mbar）。
To achieve a gold coating of 10nm create a new recipe based on Timed Sputter. The default Material setting is Gold. Set the time to 30 seconds
要获得 10nm 的金涂层，请创建一个基于定时溅射的新配方默认材料设置为 Gold 将时间设置为 30 秒.
If necessary adjust the time or current slightly to modify the thickness.
如有必要 ，稍微调整时间或电流以修改厚度。
5.1.2 High resolution SEM coatings for field emission SEM
5.1.2 用于场发射 SEM 的高分辨率 SEM 涂层
Generally, the recommended target materials are chromium or iridium and the objective is to generate a coating thickness of 5-10 nm
通常，推荐的靶材是铬或铱，目标是产生 5-10 nm 的涂层厚度.
The deposition rate vs current graph using a chromium target is shown inFigure 9-2. With a current of 100 mA, a deposition rate of 20nm/minute is typically achieved (assuming that the sample height is set to the default height of 60mm and the vacuum is 1x10-2 mbar)
使用 铬靶材的沉积速率与电流的关系图如图 9-2 所示 。 当电流为 100 mA 时 ， 通常可实现 20nm/min 的沉积速率 （ 假设 样品高度 设置为 默认高度 60mm， 真空度为 1x10-2 mbar）
To achieve a chromium coating of 10nm, create a new recipe based on Timed Sputter
要获得 10nm 的铬涂层，请创建一个基于定时溅射的新配方:
● Set the material to Chromium
● 将材质设置为 Chromium.
● Set the time to 30 seconds
● 将时间设置为 30 秒.
If necessary adjust the time or current slightly to modify the thickness.
如有必要 ，稍微调整时间或电流以修改厚度。
5.1.3 Aluminium thin film
5.1.3 铝薄膜
Aluminium is often difficult to coat due to its fast oxidizing properties. Also, its oxidized layer is difficult to remove as it reduces the required target voltage to produce a sputter current of 150mA. This increases the time required to clean the target.
铝由于其快速氧化特性 ，通常难以涂层 ， 而且它的氧化层也很难去除 ， 因为它会降低产生溅射所需的靶电压电流为 150mA。 这会增加清洁目标所需的时间 。
However, the Q150T is set up to cycle the plasma which reduces this cleaning time. The cleaning cycle is terminated when the target voltage rises above 300V, thus preventing an already clean target coating the chamber excessively.
然而，Q150T 被设置为循环等离子体 ， 这减少了这种清洁时间 。 当目标电压上升到 300V 以上时 ， 清洁周期终止 ， 从而防止已经清洁的目标过度覆盖腔室 。
As an example, to achieve an Aluminium coating of 100nm
例如，要实现 100nm 的铝涂层:
1. Create a new recipe based on FTM Terminated Sputter
1. 基于 FTM 端接溅射创建新配方.
2. Set the material to Aluminium
2. 将 material 设置为 Aluminium.
Q150T S/E/ES plus
3. When prompted, select Setup process using material data. This applies a sputter current of 150mA to clean the target
3. 出现提示时，选择使用材料数据设置过程。这施加了 150mA 的溅射电流来清洁目标.
4. Edit the Terminate Thickness setting to 100nm
4. 将 Terminate Thickness 设置编辑为 100nm.
The clean time on the second page of recipe properties should be between 10 and 30 seconds. However, leave at the default value of 30 seconds for this setup (requires Admin level to edit). The Q150T applies the optimum parameters for the cleaning cycle appropriate to your selection in the material list (in this case, aluminium).
recipe 属性第二页上的清理时间应介于 10 到 30 秒之间， 但是 ，对于此设置 ，请保留默认值 30 秒 （需要管理员级别进行编辑）。Q150T 根据您在材料列表中的选择 （ 在本例中为铝 ）为清洁周期应用最佳参数 。
On running the above process the coater will:
在运行上述过程时， 涂布机将：
1. Pump down to the clean stage as before
1. 像以前一样抽真空至清洁阶段.
2. Clean the target for the time specified by Clean Time in the recipe
2. 在配方中 Clean Time 指定的时间内清洁目标.
3. Wait for 20 seconds with the plasma off
3. 关闭等离子体 20 秒.
4. Repeat the procedure until the target voltage is above 300V at the end of the clean cycle for two consecutive cycles.
4. 重复该过程 ， 直到清洁周期结束时目标电压高于 300V， 连续两个周期。
5. Continue with the standard sputter cycle
5. 继续进行标准溅射循环.
If the target voltage fails to reach 300V after 15 cycles (see note below) the process is stopped automatically. This might occur if the target has not been used recently. Vent the system, remove the target and clean it manually using a fine abrasive. Repeat the process.
如果目标电压在 15 次循环后未能达到 300V（ 参见下面的注释 ）， 则该过程将自动停止如果未使用目标 ， 则可能会发生这种情况最近对系统进行通风，移除目标并使用细 ABrasive 手动清洁 。 重复该过程 。
The maximum of 15 cycles is determined by the Max pulse clean cycles property in System Properties - Sputter Parameters (see page 52). Note administrator level access is required to change this property. |
5.2 FTM Sputter
5.2FTM 溅射
This process (only available if the FTM is fitted) is suited to the following typical applications:
此过程 （ 仅在安装 FTM 时可用 ） 适用于以下典型应用：
● SEM coatings for tungsten emission SEM
● 用于钨发射 SEM 的 SEM 涂层.
● High resolution SEM coatings for field emission FE- SEM
● 用于场发射 FE-SEM 的高分辨率 SEM 镀膜.
● General thin film coatings
● 通用薄膜涂层.
5.2.1 High resolution SEM coatings for field emission SEM
5.2.1 用于场发射 SEM 的高分辨率 SEM 涂层
For High resolution SEM coatings for field emission SEM, the recommended target materials are generally chromium or iridium and the objective is to generate a coating thickness of 5-10 nm
对于用于场发射 SEM 的高分辨率 SEM 涂层，推荐的靶材材料通常是铬或铱，目标是产生 5-10 nm 的涂层厚度.
To achieve a chromium coating of 5nm, create a new recipe based on FTM Sputter
要获得 5nm 的铬涂层，请基于 FTM 溅射创建一个新配方:
● Set the material to Chromium
● 将材质设置为 Chromium.
● When prompted, select Setup process using material data. This applies a Sputter Current of 120 mA and automatically sets the Clean Current to 150 mA and the Terminate Thickness to 5.00 nm.
● 出现提示时 ， 选择使用物料数据设置过程 。 这将施加 120 mA 的溅射电流 ， 并自动将 CleanCurrent 设置为 150 mA， 将 TerminateThickness 设置为 5。00 纳米。
If necessary adjust the thickness required if the coating is not sufficient.
如有必要 ， 如果涂层不足 ， 请调整所需的厚度 。
Q150T S/E/ES plus
5.2.2
5.3
5.3.1
General thin film coatings
通用薄膜涂层
As an example, to achieve a silver coating of 100nm
例如，要实现 100nm 的银涂层:
● Create a new recipe based on FTM Terminated Sputter
● 基于 FTM 端接溅射创建新配方.
● Edit the newly created recipe
● 编辑新创建的配方.
● Set the material to Silver
● 将材质设置为银色.
● When prompted, select Setup process using material data. This applies a Sputter Current of 50 mA and a Terminate Thickness of 5.00 nm
● 出现提示时，选择使用物料数据设置过程。这施加了 50 mA 的溅射电流和 5.00 nm 的端接厚度.
● Edit the Terminate Thickness setting to 100nm.
● 将 TerminateThickness 设置编辑为 100nm。
Metal Evaporation
金属蒸发
This process is designed for the following applications:
此过程专为以下应用程序而设计 ：
● Alternative coatings methods for SEM samples where sputtering is not available.
● 用于无法进行溅射的 SEM 样品的替代镀膜方法 。
● Coating metal films on non-EM substrates
● 在非 EM 基材上涂覆金属薄膜.
It is only available with Q150T E/ES models equipped with the optional metal evaporation insert. To achieve a specific coating thickness, the FTM must be installed.
它仅适用于配备可选金属蒸发嵌件的 Q150TE/ES 型号 。 要达到特定的涂层厚度 ， 必须安装 FTM。
How to achieve a 20nm gold coating
如何获得 20nm 金涂层
Fit the tungsten filament to the evaporation insert as described on page64.
如第 64 页所述 ，将钨丝安装到 ev 发酵插件上。
Load the filament with a small quantity of the gold to be evaporated. Carefully fit the insert as described on page62.
在细丝上加载少量要蒸发的黄金 。 按照第 62 页的说明小心地安装插件 。
1. Create a new recipe based on Metal Evaporation
1. 创建基于金属蒸发的新配方.
2. Edit the new recipe
2. 编辑新配方:
● Change Outgas time to a minimum of 2 seconds
● 将 Outgas 时间更改为至少 2 秒
● Set the Outgas Current to zero (outgassing is not necessary for this material).
● 将 OutgasCurrent 设置为零 （ 此材料不需要除气 ）。
3. Ensure the FTM cover is open
3. 确保 FTM 盖已打开.
4. Run the new recipe
4. 运行新配方.
5. When the Pump Hold message is displayed, tap Continue when ready to proceed.
5. 当显示 Pump Hold（ 泵保持 ） 消息时 ，准备好时点击 Continue（继续 ） 以继续。
6. The system pumps the chamber to the required vacuum
6. 系统将腔室泵送至所需的真空度.
7. When pumping is complete, the system gradually increases the evaporation current.
7. 当抽气完成时 ， 系统逐渐增加蒸发电流。
Figure 5-1. Metal evaporation process
图 5-1。金属蒸发工艺
Q150T S/E/ES plus
8. When evaporation can be seen on the FTM monitor, press the Stop Ramp button
8. 当在 FTM 监视器上可以看到蒸发时，按下 Stop Ramp 按钮.
9. When the required thickness is achieved, tap the Terminate button to stop evaporation and vent the chamber.
9. 当达到所需的厚度时 ， 点击 Terminate（终止） 按钮以停止蒸发并对腔室进行排气。
5.4 Pulsed Cord Evaporation
5.4 脉冲索蒸发
This process is designed for preparing conductive carbon coatings for SEM specimens for X-ray microanalysis EDX and WDX. It is only available with Q150T E/ES models equipped with the carbon cord insert option.
该工艺设计用于制备用于 X 射线微量分析的 SEM 样品的导电碳涂层 EDX 和 WDX，仅适用于 Q150TE/ES 配备 CarbonCOrd 插件选项的型号。
5.4.1 How to create a 20nm carbon coating
5.4.1 如何创建 20nm 碳涂层
1. Install the carbon cord insert as described on page62.
1. 按照第 62 页的说明安装碳素线插件 。
2. Ensure the stage is fitted with the extended height cylinder (see page 73) to give the maximum source-to-stage distance.
2. 确保载物台装有加长高度的圆柱体（ 参见第 73 页）， 以提供最大的源到载物台的距离 。
3. Create a new recipe based on Pulsed Cord
3. 基于 Pulsed Cord 创建新配方.
4. Edit the newly created recipe setting the parameters as shown inTable 5.
4. 编辑新创建的配方并设置参数 ，如表 5 所示 。
5. Run the new recipe
5. 运行新配方.
Table 5 Pulsed cord evaporation parameters for 20nm coating.
表 5 20nm 镀膜的脉冲线蒸发参数。
Parameter | Value |
Pulse Current | 50 A |
Pulses length | 3 s |
Pulse count | 1 |
Outgas time | 60 s |
Outgas Current | 30 A |
Pump Hold* | Yes |
*Administrator level access is required to change this property.
*需要管理员级别的访问权限才能更改此属性
5.5 Controlled Pulsed Cord Evaporation
5.5 受控脉冲索蒸发
This process is used for preparing conductive carbon coating using carbon cord. It requires the optional carbon cord insert (see page62)
该工艺用于制备使用碳帘线的导电碳涂层。它需要可选的碳素线插件（参见第 62 页）.
During the process the coating is built up of multiple thin layers using short current pulses (see Figure 5-2). This reduces the heating effect on the sample and allows the FTM to be used to terminate the coating.
在此过程中 ， 涂层 g 使用短电流脉冲由多个薄层组成 （见图 5-2） 这减少了对样品的加热效应 ，并允许 FTM 用于研磨涂层。
5.5.1 Creating a 15nm to 2nm coating for EBSD
5.5.1 为 EBSD 创建 15nm 至 2nm 涂层
This section describes how to create a 15 to 2nm coating for EBSD
本节介绍如何为 EBSD 创建 15 至 2nm 涂层.
1. Install the carbon cord insert as described on page 62ensuring that the C5421 carbon cord is used. Note the springs in the insert must be removed to ensure that the cord does not fuse prematurely.
1. 按照第 62 页的说明安装碳素线插件 ， 确保使用 C5421 碳素线 。 请注意 ， 必须卸下插件中的弹簧 ， 以确保电源线不会过早熔合 。
2. For the default tooling factor to be valid the stage should be fitted so the top of the sample is 60mm above the base plate
2. 为了使默认工具系数有效，应安装载物台，使样品顶部高于底板 60 毫米.
3. Create a new recipe based on Controlled pulsed cord
3. 根据受控脉冲线创建新配方.
4. Edit the newly created recipe setting the parameters as shown inTable 6. If an EBSD coating is required, set the terminate thickness to the required thickness i.e. 3nm
4. 编辑新创建的配方，设置参数，如表 6 所示。如果需要 EBSD 涂层，请将端接厚度设置为所需的厚度，即 3nm.
Table 6 Controlled Pulsed cord evaporation parameters for 25nm coating.
表 6 25nm 镀膜的受控脉冲线蒸发参数。
Parameter | Value |
Terminate Thickness | 15 nm |
Pulse Current | 54 A |
Pulse length | 1 s |
Pulse Interval | 10 s |
The remaining properties have been optimised for coatings between 2 and 15nm with the top of the sample 60mm from the base plate. Thicker coatings at this stage position can be achieved. However this will increase the risk of the cord fusing before reaching the required thickness. If the cord does fuse it tends to deposit about 6nm, thus it can cause the required thickness to be exceeded. In order to reduce this error the system attempts to detect when the cord is about to fuse. If detected the coater will assume next pulse will produce 6 nm thus will apply the pulse if the predicted outcome would be closer to the terminate value.
其余特性已针对 2 至 15nm 之间的涂层进行了优化 ，样品顶部距底板 60 毫米 。 在这个阶段位置可以实现较厚的涂层 。 但是，这将增加帘线在达到所需厚度之前熔断的风险 。 如果电线确实熔合 ， 它往往会沉积约 6nm 的波长，因此可能会导致超过所需的厚度 。为了减少此错误 ， 系统会尝试检测电源线何时即将熔断 。 如果检测到 ， 镀膜机将假设下一个脉冲将产生 6 nm， 因此 ，如果预测结果更接近终止值 ， 则应用脉冲 。
For a full list of recipe parameters seeTable 26.
有关 recipe 参数的完整列表 ，请参阅表 26。
5. Run the new recipe
5. 运行新配方.
The reliability of this process depends on the operation of the FTM. The stability of the FTM is affected by the quality of the crystal. A crystal will need to be changed before the end of its maximum life. This can even be before the FTM status indicates 10% used (see page 48) as the deposited carbon will increase the thermal errors and can easily flake. These effects will increase if materials other than carbon are deposited on the crystal. |
Q150T S/E/ES plus
Figure 5-2. Typical 12nm Controlled pulse evaporation
图 5-2.典型的 12 nm C 在线脉冲蒸发
5.6 Pulsed Rod Evaporation
5.6 脉冲棒蒸发
Use this process for preparing TEM coatings for applying carbon reinforcement layers onto formvar grids. It is only available with Q150T E/ES models
使用此工艺制备 TEM 涂层，用于将碳增强层施加到 formvar 网格上它仅适用于 Q150T E/ES 型号.
For a full list of recipe parameters seeTable 25on page83.
有关配方参数的完整列表， 请参见第 83 页的表 25。
5.6.1 How to create a conductive layer for SEM
5.6.1 如何为 SEM 创建导电层 r
1. Install the carbon insert as described on page 59. Use the rod shaper with the blue handle (provided in the accessory pack) to prepare carbon rods with a
1. 按照第 59 页的说明安装碳插件 。 使用带有蓝色手柄的杆整形器 （ 在附件包中提供 ） 来制备带有
1.2mm diameter spigot as described on page60.
直径为 1.2mm 的龙头 ，如第 60 页所述 。
Figure 5-3. Carbon rod shaper (blue handle) for preparing 1.2mm (dia) spigot
图 5-3。碳棒整形器（蓝色手柄），用于分离 1.2mm（直径）套管
2. Ensure the stage is fitted with an extended height cylinder (see page73) to give the maximum source-to-stage distance.
2. 确保载物台装有加长高度的圆柱体 （ 参见第 73 页）， 以提供最大的离子源到载物台的距离。
3. Create a new recipe based on Pulsed Rod
3. 基于 Pulsed Rod 创建新配方.
Q150T S/E/ES plus
4. Edit the newly created recipe setting the parameters as shown inTable 7.
4. 编辑新创建的配方 ， 设置参数 ，如表 7 所示 。
5. Run the new recipe
5. 运行新配方.
6. The thickness of coating can be varied by adjusting the stage height, raise the stage to increase thickness, lower to reduce.
6. 可以通过调整载物台高度来改变涂层的厚度 ， 升高载物台以增加厚度， 降低以减少厚度。
Table 7 Pulsed rod evaporation parameters for conductive layer for SEM
表 7SEM 导电层脉冲棒蒸发参数
Parameter | Value |
Material | Carbon |
Pulse Current* | 62A |
Pulses length | 3 s |
Pulse count | 1 |
Outgas time | 10 s |
Outgas Current | 40A |
* Administrator level access is required to change this property.
* 需要管理员级别的访问权限才能更改此属性
CAUTION! For pulsed rod evaporation, the recommended pulse current range is 60-65A. Currents above this may activate the power supply safety trip causing the unit to shut down. |
5.7 Using Outgas Source options
5.7 使用废气源选项
In addition to the evaporation parameters described in the previous section, you can also set up enhanced outgassing with the Outgas source parameter with the Pulsed Rod or Pulsed Cord recipes. This has three settings: Multiple, Single or No as described below.
除了上一节中描述的蒸发参数外 ，您还可以通过 Pulsed Rod 或 PulsedCord 配方的 Outgassource 参数设置增强的除气 。这有三个设置 ：MultipleSingle 或 No， 如下所述 。
.You need to be logged in at Administrator level to access this parameter (see page49)
您需要以管理员级别登录才能访问此参数（参见第 49 页）.
Table 8
表 8
Outgas Source options
排气源选项
Setting | Action |
Single outgas | Applies the outgas current for the outgas time once. If the vacuum max recovery time is zero the coat cycle will automatically start. Otherwise, the current is turned off and outgas recovery starts. In this period, the Q150T waits for the vacuum to return to the level it was before the current was applied. This time is limited by the max outgas recovery time parameter (default 10s). After this, the coating continues automatically. |
Multiple outgas | The Multiple outgas option allows you to verify that out gassing is occurring and to decide to continue or repeat the outgas cycle. It applies the outgas current and outgas recovery as above. After a cycle is completed, you are prompted to (a) carry out further out gas cycles, (b) start the coating or (c) vent the chamber. If the vacuum is less than 0.05 mbar below the vacuum after the outgassing, the Coat button changes to green to advise that further outgassing is not necessary. |
No | Skips the outgas step and waits 5 seconds for the stage to speed up before commencing coating. |
Q150T S/E/ES plus
5.7.1
5.7.2
Setting Outgas Source options
设置出气源选项
To set up outgassing options:
要设置脱气选项 s：
1. Change the user group mode to Admin level (see page49)
1. 将用户组模式更改为管理员级别（参见第 49 页）.
2. On the Home screen, tap on Recipes (see page22)
2. 在主屏幕上点击配方（参见第 22 页）.
3. Choose the recipe you want to edit: Pulsed Rod Evaporation or Pulsed Cord Evaporation
3. 选择要编辑的配方脉冲棒蒸发或脉冲绳蒸发.
4. Tap on Outgas source
4. 点击排气源.
5. Select Multiple, Single or No
5. 选择 MultipleSingle 或 No.
6. Tap on OK to confirm the change
6. 点击确定以确认更改.
Running Multiple Outgassing
运行多次脱气
When you run a recipe modified for multiple outgassing, you are prompted to repeat outgassing or proceed with coating (see below).
当您运行针对多次脱气修改的配方时， 系统会提示您重复脱气或继续包衣 （ 见下文 ）。
● Tap on the Yes button to run another outgas cycle.
● 点击是按钮运行另一个排气循环。
● Tap on the No button to continue with the coating following the parameters set for the particular recipe.
● 点击 “否 ” 按钮 ， 按照为特定配方设置的参数继续涂层 。
Figure 5-4. Prompt to repeat the outgas procedure or proceed with coating
图 5-4.提示重复除气程序或进行涂层处理
Q150T S/E/ES plus
Ramped Recipes
斜坡配方
The Q150T Ramped Recipes produce carbon coatings from a shaped carbon rod. We recommend these recipes instead of the Pulse Rod process if you require a consistently repeatable deposited thickness. There are two ramped recipes:
Q150T 斜向配方从成型的碳棒生产碳涂层如果您需要始终如一的可重复性， 我们建议使用这些配方而不是脉冲棒工艺沉积厚度。这是两个斜坡食谱：
● Timed Ramped Carbon - see page38
● 定时斜坡碳 - 见第 38 页
● Thickness Ramped Carbon - see page42(only available if FTM installed)
● 斜射碳厚度 - 参见第 42 页 （ 仅在安装了 FTM 时可用 ）
Generally, these recipes require the use of the extended height chamber (see page 73). The short chamber may be used for a coating thickness greater than 12nm although the FTM will be inaccurate due to the close proximity of the high
通常， 这些配方需要加长高度室的使用 （参见第 73 页）。 短腔室可用于大于 12nm 的涂层厚度 ， 但由于靠近高
temperature rods.
温度棒。
Carbon insert setup
碳嵌件设置
1. Use the rod shaper with the red handle (provided in the accessory pack) to prepare two carbon rods each with a spigot 5mm long and with a diameter of
1. 使用带有红色手柄的杆整形器 （ 在附件包中提供 ） 准备两根碳棒 ， 每根带有 5mm 长 、 直径为
1.4mm diameter (see page62)
直径 1.4 mm（参见第 62 页）.
Figure 5-5. Carbon rod shaper (red handle) for preparing 1.4mm (dia) spigot
图 5-5.用于制备 1.4 毫米（直径）套管的碳棒成型器（红色手柄）
2. You will then need to shape one of these rods to form a wedge using the wedge tool (Part No. 12097). This tool can be used to shape 3mm or 6mm rods. Use the end which has the grove closest to the plate to shape 3mm rods (seeFigure 5-6, detail B).
2. 然后 ， 您需要使用楔形工具 （ 零件号 12097） 将其中一根杆成型以形成楔形 。 该工具可用于塑造 3mm 或 6mm 的棒材。 使用凹槽最靠近板的一端形成 3 毫米的棒材（ 见图 5-6， 细节 B）。
3. Hold the tool with the grove to be used uppermost
3. 握住最上面要使用的凹槽的刀具.
Figure 5-6. Wedge tool (Part No. 12097)
图 5-6.楔形工具（零件号 12097）
4. Place the rod with its shaped end into the grove ensuring the rod is pushed up to the shoulder.
4. 将杆及其形状端放入凹槽中 ， 确保杆被推到肩部。
Q150T S/E/ES plus
5. File the rod so it is level with the metal tool. For best results, tap the dust out of the grove several times during this shaping process being careful not to move the rod.
5. 锉削杆 ，使其与金属工具齐平为了获得最佳效果 ， 在此成型过程中将灰尘从凹槽中敲出几次 ，小心不要以移动杆。
6. Fit the flat-ended rod into the carbon gun (see page59)
6. 将平头杆安装到碳枪中（参见第 59 页）.
7. Fit the wedge-shaped rod with its point closest to the plate of the insert (see Figure 5-7). Ensure that the sliding clamp of the insert is pulled back approximately 5mm and the point of the spigot is resting on the end of the plain spigot. It may be necessary to swap the side of the wedged spigot or to rotate the plain spigot.
7. 将楔形杆的尖端最靠近嵌件板安装 （ 见图 5-7）。 确保将插件的滑动夹向后拉约 5 毫米 ， 并且龙头的尖端位于普通龙头的末端 。 可能需要交换楔形龙头的一侧或旋转普通龙头。
Figure 5-7. A finished wedge-shaped rod (left); and in position with plain rod (right)
图 5-7。成品楔形棒（左）;和带普通杆的 P 位置（右）
5.8.2 The Timed Ramped Carbon recipe
5.8.2 定时斜坡碳配方
To achieve the controlled thickness this process uses a controlled evaporation current profile (seeFigure 5-8)
为了实现受控的厚度，该工艺使用受控的蒸发电流曲线（见图 5-8）.
Ramped carbon process
斜向碳工艺
50
45
40
35
30
25
20
15
10
5
0
电流斜坡速率下电流增加
Ramp terminated at Evaporation Current
斜坡终止于蒸发电流
Ramp terminated
坡道终止
PreEvap End current
PreEvap 结束电流
Evaporation time
蒸发时间
Current increasing at Pre Evap Rate
电流在预蒸发率下增加
Outgas time
放气时间
0 10 20 30 40 50 60 70 80 90 100
Time(s)
时间
Figure 5-8. Ramped evaporation current profile with default parameters
图 5-8。 使用默认参数的斜坡 ev 分布电流曲线
This consists of four phases:
这包括四个阶段：
1. The rods are outgassed at the Outgas Current for the Outgas Time. The shutter opens and the evaporation starts.
1. 杆在除气电流处脱气 出气时间快门打开 ， 开始蒸发 。
Q150T S/E/ES plus
2. The evaporation current increases at the Pre Evap Rate* until the value of PreEvap End current is reached.
2. 蒸发电流以 PreEvapRate*（预蒸发速率）*增加 ， 直到 PreEvap End current 的值达到最大值 。
3. The evaporation current now increases at the Current Ramp Rate* until the Evaporation Current value is reached or the Evaporation Time has expired.
3. 蒸发电流现在以当前斜坡速率 * 增加 ， 直到达到蒸发电流值或蒸发时间已过。
4. The evaporation current is held constant until Evaporation Time has expired.
4. 蒸发电流是 he ld 常数， 直到蒸发时间结束。
(* Admin level required to change these parameters)
（* 更改这些标准需要管理员级别 ）
If you observe excessive sparking during the first 30 seconds of the evaporation stage the Pre Evap End Current parameter should be reduced by 1A at a time (but no lower than 27A). If excessive sparking is seen 30 seconds or more into the evaporation stage, reduce the Current Ramp Rate. |
If you change Thickness/Timed Ramped Carbon recipe parameters ensure that the Evaporation Time is sufficient to achieve a constant current for at least 8 seconds (but no more than 30s) at the end of the recipe
如果您更改了 Thickness/Timed Ramped Carbon（厚度/定时斜坡碳）配方参数，请确保蒸发时间足以在配方结束时实现至少 8 秒（但不超过 30 秒）的恒定电流.
The default settings are correct for use with a 1.4mm spigot. However, there is often a slight variation in the tooling of the rod shapers. You can correct the default current setting for the actual rod spigot size using the following formula:
默认设置适用于 1.4mm 龙头。 然而， 棒材成型机的模具通常存在细微的变化 。 您可以使用以下公式更正 act ualrodspigotsize 的默认当前设置 ：
New current =Spigot diameter2 x Default current
新电流 = 龙头直径 er2x 默认电流
1.69
For example, if the actual spigot diameter is 1.1mm you should use an evaporation current of 30.8A.
例如 ， 如果实际龙头直径为 1.1mm， 则应使用 30.8A 的蒸发电流 。
5.8.3 Adjusting coating thickness
5.8.3 调整涂层厚度
The default settings in the Thickness/Timed Ramped Carbon recipes will produce a 15 to 20nm coating suitable for SEM use. The actual coating thickness will depend on the stage height and the diameter of the spigot produced by your sharpener.
厚度 / 定时斜向碳配方中的默认设置将产生适合 SEM 使用的 15 至 20nm 涂层 。 实际涂层厚度取决于载物台高度和磨刀机生产的龙头直径 。
As an approximate guide, the coating thickness is proportional to the square of the distance between the stage height and the rods (the same amount of material is distributed over an increasing area as it travels away from the rods).
作为近似指导， 涂层厚度与载物台高度和杆之间距离的平方成正比 （ 相同数量的材料为 分布在增加的 a 上 ， 因为它远离杆）。
New Thickness = Distance from source2 x Thickness at original distance Required distance2
新厚度 = 距源的距离 2 x 原始距离处的厚度 s 所需距离 2
Example. Assume that a coating thickness of 18nm has been achieved with a separation between the rods and source of 125mm (equivalent to a stage height of 75mm using the extended height chamber). To achieve a coating thickness of 11nm you would need to increase the separation to 160mm
例。假设在棒和源之间的间隔为 125 毫米（相当于使用加长高度室的 75 毫米平台高度）的情况下实现了 18 纳米的涂层厚度。要实现 11nm 的涂层厚度，您需要将间隔增加到 160mm.
The thickness of the deposited carbon can also be controlled by changing the property“Evaporation current”. This property is the final current achieved during the ramped recipe (see Figure 5-8). The default current is 46A and this is the maximum that should be used for a 1.4mm spigot. However, reducing the Evaporation Current reduces the thickness of the coating. For example, with the Evaporation Current set to 38A the thickness of the coating (at a distance of 125mm) is reduced to approximately 5nm.
沉积碳的厚度也可以通过改变 “ 蒸发电流 ” 特性来控制 。 此属性是在斜坡配方期间达到的最终电流 （ 见图 5-8） 默认电流为 46A， 这是应该使用的最大值 用于 1.4 毫米的插口。 然而， 降低蒸发电流会减少涂层的厚度 。 例如， 当蒸发铜 rrent 设置为 38A 时 ， 涂层的厚度 （ 距离 125mm） 减少到大约 5nm。
Q150T S/E/ES plus
5.8.4 How to create a carbon support layer For TEM
5.8.4 如何为 TEM 创建碳支撑层
1. Install the carbon insert as described on page59.
1. 按照第 59 页的说明安装碳插件 。
2. Use the rod shaper with the red handle (provided in the accessory pack) to prepare two carbon rods each with a spigot 5mm long and with a diameter of
2. 使用带有红色手柄的杆形器 （ 在附件包中提供 ） 准备两根碳棒 ， 每根带有 5mm 长 、 直径为 5mm 的套管
1.4mm diameter (seeFigure 5-5, page37)
直径 1.4 mm（参见图 5-5，第 37 页）.
3. Ensure the stage is fitted with the longer support shaft adjusted to a height of 75mm above the base plate
3. 确保载物台装有较长的支撑轴，该轴可调节到底板上方 75 毫米的高度.
4. Ensure the extended height cylinder 10429 is fitted as described on page73.
4. 确保按照第 73 页的说明安装加长高度气缸 10429。
5. Create a new recipe based on Timed Ramped Carbon
5. 根据定时 Ramped Carbon 创建新配方.
6. Edit the newly created recipe setting the parameters as shown inTable 9.
6. 编辑新创建的 recipe 设置参数 ， 如表 9 所示 。
7. Run the new recipe
7. 运行新配方.
Table 9 Ramped Carbon TEM parameters for 5nm coating
表 9 5nm 镀膜的斜向碳 TEM 参数
Parameter | Value |
Evaporation Current | 41 A |
Evaporation time | 60 s |
Maximum evaporation time * | 6 min |
Tooling Factor | 1 |
Pre Evap End Current | 32.0 A |
Current Ramp Rate | 0.25 A/s |
Outgas Current | 20 A |
Out Gas time | 10 s |
Pump Hold | Yes |
Pre Evap Rate* | 1.00 A/s |
* Administrator level access is required to change this property.
* 需要管理员级别的访问权限才能更改此属性
5.8.5 How to create a conductive carbon layer for SEM
5.8.5 如何为 SEM 创建导电碳铺设器
1. Install the carbon insert as described on page59.
1. 按照第 59 页的说明安装碳插件 。
2. Use the rod shaper with the red handle (provided in the accessory pack) to prepare two carbon rods each with a spigot 5mm long and with a diameter of
2. 使用带有红色手柄的杆整形器 （ 在附件包中提供 ） 准备两根碳棒， 每根带有 5 mm 长 、 直径
1.4mm diameter (see page62)
直径 1.4 mm（参见第 62 页）.
3. Ensure the stage is fitted with the longer support shaft adjusted to a height of 75mm above the base plate
3. 确保载物台装有较长的支撑轴，该轴可调节到底板上方 75 毫米的高度.
4. Ensure the extended height cylinder 10429 is fitted as described on page73.
4. 确保按照第 73 页的说明安装加长高度气缸 10429。
5. Create a new recipe based on Timed Ramped Carbon
5. 根据定时 Ramped Carbon 创建新配方.
6. Edit the newly created recipe setting the parameters as shown inTable 10.
6. 编辑新创建的配方 ，设置参数 ，如表 10 所示 。
7. Run the new recipe
7. 运行新配方.
Table 10 Timed Ramped Carbon parameters for SEM coatings
表 10 SEM 涂层的定时斜坡 Carbon 参数
Parameter | Value |
Evaporation Current | 52 A |
Evaporation time | 108 s |
Maximum evaporation time * | 6 min |
Tooling Factor | 1 |
Pre Evap End Current | 32.0 A |
Current Ramp Rate | 0.25 A/s |
Outgas Current | 20A |
Out Gas time | 10 s |
Pump Hold | Yes |
Pre Evap Rate* | 1.00 A/s |
* Administrator level access is required to change this property.
* 需要管理员级别的访问权限才能更改此属性
Q150T S/E/ES plus
5.8.6 Thickness Ramped Carbon controlled by the FTM
5.8.6 由 FTM 控制的厚度斜坡碳
这 Thickness
厚度 Ramped
加大 Carbon
碳 recipe
食谱 is
是 only
只 available
可用 if
如果 an
一 FTM isfitted
已装配.
To achieve a controlled thickness this process uses a controlled ramped evaporation current (see Figure 5-8) as in the Timed Ramped Carbon recipe but, instead of using time as the control, the FTM controls the thickness.
为了实现受控的厚度 ， 该工艺使用同步的斜坡蒸发电流 （ 见图 5-8）， 就像定时斜坡碳配方一样 ， 但不是使用时间作为控件，FTM 控制厚度。
The following differences between the Timed Ramped Carbon recipe and the Thickness Ramped Carbon recipe are:
定时斜切 Carbon 配方和 ThicknessRamped Carbon 配方之间的以下区别是：
● The thickness is only monitored by the FTM from 15 seconds after the end of the current ramp, when the current is stabilised, until the end of the recipe when the required thickness has been achieved.
● 厚度仅由 FTM 监控 ，从电流斜坡结束后的 15 秒开始 ，当电流稳定时， 直到配方结束 。 已达到所需的厚度 。
● The shutter will open 15 seconds after the end of the current ramp when the current is stabilised.
● 当电流稳定时， 快门将在电流斜坡结束后 15 秒打开 。
● Evaporation will stop when the correct thickness is reached, and the shutter will close.
● 当达到正确的厚度时 ， 蒸发将停止 ， 百叶窗将关闭。
To use this recipe:
要使用此配方：
1. Install the carbon insert as described on page59.
1. 按照第 59 页的说明安装碳插件 。
2. Use the rod shaper with the red handle (provided in the accessory pack) to prepare two carbon rods each with a spigot 5mm long and with a diameter of
2. 使用带有红色手柄的杆整形器 （ 在附件包中提供 ） 准备两根碳棒， 每根带有 5 mm 长 、 直径
1.4mm diameter (see page37)
直径 1.4 mm（参见第 37 页）.
3. Ensure the stage is fitted with the longer support shaft adjusted to a height of 75mm above the base plate
3. 确保载物台装有较长的支撑轴，该轴可调节到底板上方 75 毫米的高度.
4. Ensure the extended height cylinder 10429 is fitted as described on page73.
4. 确保按照第 73 页的说明安装加长高度气缸 10429。
5. Create a new recipe based on Thickness Ramped Carbon
5. 根据 Thickness Ramped Carbon 创建一个新配方.
6. Edit the newly created recipe
6. 编辑新创建的配方.
7. Set Terminate Thickness to the required value (default 5 nm).
7. 将 TerminateThickness（终止厚度） 设置为所需的值 （ 默认为 5nm）。
Table 11 Thickness Ramped Carbon parameters for 5nm coating
表 11 5nm 涂层的厚度斜波碳参数
Parameter | Value | |
Evaporation Current | 52 A | |
Maximum evaporation time * | 10 min | |
Terminate Thickness | 5 nm | |
Tooling Factor | 1 | |
PreEvap End current | 32 A | |
Current Ramp Rate* | 0.2 A/s | |
Outgas Current | 20 A | |
Outgas time | 10 s | |
Pump Hold | Yes | |
* Administrator level access is required to change this property.
* 需要管理员级别的访问权限才能更改此属性
Q150T S/E/ES plus
5.9 Glow Discharge
5.9 辉光放电
Requires optional Glow Discharge insert.
需要可选的 Glow Discharge 插件。
This process can be used to clean hydrocarbon contamination from components. It is only available with Q150T S and ES models which are equipped with the Sputter power supply.
该工艺可用于去除组件中的碳氢化合物污染 。 它仅适用于配备溅射电源的 Q150TS 和 ES 型号 。
1. Carefully fit the insert as described on page66.
1. 按照第 66 页的说明小心地安装插件 。
2. Select Glow Discharge from the Recipes screen and run the process
2. 从“配方”屏幕中选择 Glow Discharge，然后运行该过程.
The default settings should be sufficient to create a hydrophilic surface on a carbon film. The process can be varied by creating a new recipe:
默认设置应足以在碳膜上创建亲水表面 。 可以通过创建新配方来改变该过程 ：
1. Create a new recipe from the default Glow discharge -ve recipe
1. 从默认 Glow discharge -ve 配方创建新配方.
2. Edit the Glow Discharge Current from 20mA to a higher value, for example, 25mA
2. 将辉光放电电流从 20mA 编辑到更高的值，例如 25mA.
The current may also be increased manually during the process but this setting would not be retained for future runs.
在此过程中 ，也可以手动增加电流 ，但此设置不会保留以备将来运行。
5.9.1 Hydrophilisation
Freshly made carbon support films tend to have a hydrophobic surface which inhibits the spreading of suspensions of particles in negative staining solutions. However, after Glow Discharge treatment with air, the carbon film is made hydrophilic and negatively charged, thus allowing easy spreading of aqueous suspensions. With alternative equipment such as Quorum GloCube, Magnesium Acetate treatment will make the surface hydrophilic and positively charged.
新制备的碳支撑膜往往具有疏水表面 ，可抑制颗粒悬浮液在负稳定溶液中的扩散 。 然而 ， 在用空气进行辉光放电处理后 ， 碳膜变得亲水性并带负电 ， 因此允许水性悬浮液轻松铺展 。 使用 QuorumGloCube 醋酸镁等替代设备 ， 处理将使表面具有亲水性和 p 带电 。
In addition to Glow Discharge with the Quorum GloQube treatment using air, other processes may be used to modify surface properties. Such treatments can facilitate the optional absorption of selected biomolecules.
除了使用 air 的 QuorumGloQube 处理的辉光放电外 ， 还可以使用其他工艺来改变表面特性。 这种处理可以促进选定生物分子的选择性吸收 。
5.9.2 Surface Cleaning
5.9.2 表面清洁
In many instances, surfaces need to be completely cleared of contamination films or deposits. This applies particularly to EM components where such deposits impair the maintenance of a clean vacuum system. A Glow Discharge treatment can be used to clean such components of undesirable residues.
在许多情况下 ， 需要完全清除表面的污染膜或沉积物。这尤其适用于电磁组件 ， 因为这些沉积物会损害清洁真空系统的维护 。GlowDischarge 处理可用于清洁您不需要的残留物的此类成分 。
Table 12 Glow discharge treatments
表 12 辉光放电处理
Atmosphere | Surface | Charge |
Air | Hydrophilic | Negative |
Air | Hydrophilic | Positive (with subsequent magnesium acetate treatment) |
Q150T S/E/ES plus
5.10 Aperture Cleaning
5.10 孔径清洁
Requires optional Metal Evaporation insert (see page63)
需要可选的金属蒸发插件（参见第 63 页）.
This process is designed to clean hydrocarbon contamination from SEM & TEM apertures. It is only available with Q150T E/ES models equipped with the optional metal evaporation insert.
这个过程旨在清理 SEM 和 TEM 孔径中的碳氢化合物污染 。 它仅适用于配备可选金属蒸发插件的 Q150TE/ES 型号 。
1. Fit the molybdenum boat source to the evaporation insert as described on page64.
1. 如第 64 页所述 ， 将钼舟源安装到蒸发插件上。
2. Choose the Aperture Cleaning recipe from the list. Edit the recipe and change the Clean Current to 10A and the Clean time to 5 minutes
2. 从列表中选择 Aperture Cleaning 配方。编辑配方，将 Clean Current 更改为 10A，将 Clean time 更改为 5 分钟.
3. Run the recipe
3. 运行配方.
4. When the coating unit has reached < 1 x 10-4 mbar and the current reads 10 A move the slider to the right or tap the Right Arrow button (
4. 当涂布装置 达到 < 1 x 10-4 mbar 且 电流读数为 10 A 时移动 向右 的滑块 或点按 向右箭头按钮 （
自 increase
增加 the
这 current gradually.
电流逐渐。
5. Watch the metal boat and keep increasing the current until the boat glows cherry red (see below). Make a note of the current.
5. 观察金属船并继续增加水流 ， 直到船发出樱桃红色的光（见下文 ）。 记下当前情况 。
Figure 5-9. Aperture cleaning in progress
图 5-9.正在进行 Aperture 清洁
6. Tap on the O button to reduce the current to zero and terminate the process
6. 点击 O 按钮将电流降至零并终止进程.
7. Create a new recipe based on the Aperture Cleaning recipe and save with a new name.
7. 根据 ApertureCleaning 配方创建新配方 ，并使用新名称保存 。
8. Change the current to a value approximately 5-10 A below the point where the boat was glowing cherry red. Change the time to 5 minutes and save the recipe.
8. 将电流更改为比船发出樱桃红色光的点低约 5-10A 的值 ，将时间更改为 5 分钟并保存配方。
删除 the
这 head
头.
CAUTION! Take care when removing the head as it will be very hot!
谨慎！ 取下头部时要小心 ， 因为它会很热！
10. Add the aperture to be cleaned
10. 添加需要清洁的孔径.
11. Replace the head into the coater carefully
11. 小心地将头部装回涂布机.
12. Load and run the recipe that has just been created
12. 加载并运行刚刚创建的配方.
13. When the current has reached the value set in the recipe slowly increase the current until the boat is glowing cherry red.
13. 当电流达到配方中设置的值时 ， 慢慢增加电流 ， 直到船发出樱桃红色的光。
14. Heat the aperture in the boat for approximately 30 seconds
14. 加热船上的孔约 30 秒.
CAUTION! Do not take the current beyond the point where the boat is no longer cherry red (i.e. bright yellow/white) as this will damage the aperture. |
15. After 30 seconds either slide the slider to the left or tap on the Z button to zero the current. The boat will stop glowing.
15. 30 秒后 ，向左滑动滑块或点击 Z 按钮将电流归零 。 船将停止发光。
16. 终止进程或等待进程在 5 分钟后自行终止 。 谨慎！ 取下头部和涂抹时要小心 ， 因为它会非常热！
Q150T S/E/ES plus
6 Instrument Settings
6 仪器选择
The specific operation of the Q150T is determined by the settings of the active recipe. Default sputter settings and general hardware settings are configured through the System menu. This section describes how you can:
Q150T 的具体作取决于活动配方的设置 。 默认溅射设置和常规硬件设置通过 System 菜单进行配置 。本示例描述了如何 ：
● Adjust the date and time
● 调整日期和时间
● Change general instrument settings
● 更改常规仪器设置
● Create user accounts
● 创建用户帐户
● Monitor the Film Thickness Monitor (FTM)
● 监控 膜厚监视器 （FTM）
Tap on System on the Home screen (seeFigure 6-1)
点击主屏幕上的 System（见图 6-1）.
Figure 6-1. System screen
图 6-1. 系统屏幕
The System screen displays the categories available at your privilege level.
System （ 系统 ） 屏幕显示您的权限级别的类别 available。
Table 13 Q150T System options
表 13Q150T 系统选项
Option | Pages | Purpose |
Date | Set the instrument clock (see page47) | |
File Manager | Backup or restore* instrument files such as recipes and processing data. | |
About | View version information about the operating software. | |
FTM | Monitor FTM usage (see page48) (Note. Only displayed if FTM installed) | |
Maintenance | View usage and service information | |
Users | Create, edit or delete user accounts (see page49) | |
Properties | Sputter Parameters* | Edit gas bleed parameters and cleaning times and cycles (see page52) |
Vacuum Parameters* | Edit pumping parameters (see page53) | |
Hardware Parameters | Stage rotation control, target information and screen brightness adjustment (see page54) |
* Admin group level required to edit these properties
* 编辑这些属性需要 管理员组级别
Q150T S/E/ES plus
6.1.1 Date
6.1.1 日期
Use this option to set the date and time used by the instrument (seeFigure 6-2)
使用此选项可设置仪器使用的日期和时间（参见图 6-2）.
Figure 6-2. System date and time settings
图 6-2.系统日期和时间设置
6.1.2 File Manager
6.1.2 文件 马纳格尔
File Manager (see Figure 6-3) allows all users to back up process log files and recipes to a USB device or another location on the network. Users with administrator level privileges (see page49) can also
文件管理器（请参见图 6-3）允许所有用户将进程日志文件和配方备份到 USB 设备或网络上的其他位置。具有管理员级别权限的用户（参见第 49 页）也可以:
● Restore data from a previously saved backup
● 从以前保存的备份中恢复数据
● Update the operating software
● 更新作软件
● Use File Manager to selectively copy, move or delete files
● 使用文件管理器有选择地复制 、移动或删除文件
Figure 6-3. File Manager (general users have access to Backup option only)
图 6-3.文件管理器（一般用户只能访问备份选项 ）
6.1.3 About
6.1.3 关于
The About screen shows version information about the operating software: the installation date and version number, and also details about the firmware installed for internal processor boards (seeFigure 6-4). You may be asked for this information during any calls with technical support.
“关于”屏幕显示作软件的版本信息 ： 安装日期和版本号， 以及内部处理器板安装的固件的详细信息 （参见图 6-4）。 在与技术支持进行任何通话时 ， 系统可能会要求您提供此信息 。
6.1.4 FTM
This option is only displayed if an FTM is fitted in the instrument. If this is not the case, any processes which depend on an FTM are not displayed in the software.
仅当仪器中安装了 FTM 时 ， 才会显示此选项 。 如果不是这种情况， 则任何依赖于 FTM 的进程都不会显示在软件中 。
Tap on FTM to view the status of the Film Thickness Monitor (seeFigure 6-4)
点击 FTM 查看 Film Thickness Monitor 的状态（参见图 6-4）.
这 shows
显示 the
这 percentage
百分比 of
之 the
这 crystal
晶体 used
使用 and
和 will
将 help
帮助 you
你 decide
决定 when
什么时候 to
自 replace
取代 it
它 (see
看 page
页72).
Figure 6-4. About (left) and FTM Status (right) screens
图 6-4.关于（左）和 FTM 状态（右）屏幕
6.1.5 Maintenance
6.1.5 养护你的厨具
The Maintenance screen shows usage information and is updated by the service engineer:
“维护”屏幕显示使用信息，并由服务工程师进行指定 ：
● Operation time
● 作时间
● Serviced on
● 服务日期
● Chamber cleaned on
● 腔室清洁
● Processing done since last clean
● 自上次清洁以来完成的处理
Figure 6-5. Maintenance
图 6-5. 保养
Q150T S/E/ES plus
6.2
6.2.1
User Management
用户管理
The Q150T software employs a user account system with individual login names and passwords. Registered users are granted access privileges at a group level.
Q150T 软件采用具有个人登录名和密码的用户帐户系统 。 注册用户将在组级别被授予访问权限 。
Student is the lowest privilege level and is not password protected. At this level, a user can run the instrument for sputtering or evaporation and create or edit recipes but cannot change any settings. It is also possible to register users with student privileges.
Student 是最低权限级别 ， 不受密码保护在此级别 ， 用户可以运行仪器进行溅射或 eva 处理 ，并创建或编辑配方 ，但无法更改任何设置 。 也可以注册具有学生权限的用户。
Default is for general users and is password protected. At this level, a user can run the instrument for sputtering or evaporation and create or edit recipes. It is also possible to register users with student or default privileges. A default user has additional access to vacuum and hardware settings.
默认值适用于一般用户 ，并且受密码保护。 在这个 level， 用户可以运行仪器进行溅射或蒸发 ， 并创建或编辑配方也可以将用户注册到 student 或 default 权限 。 默认用户具有对 vacuum 和 d 硬件设置的额外访问权限。
Admin is password protected. In this level, it is possible to edit a number of hardware settings. It is also possible to register users with admin, student or default privileges. With admin privileges, a user can edit many sputter, vacuum and hardware settings.
管理员有密码保护 d. 在这个级别， 可以编辑许多硬件设置。 也可以用 adminstudent 或 default 权限注册用户 。使用 admin 权限 ， 用户可以编辑许多溅射真空和硬件设置。
Some system properties can only be accessed with additional privileges. Contact Quorum for details.
某些系统属性只能通过附加权限进行访问 。有关详细信息，请联系 Quorum。
When first switched on, the Q150T starts in the default startup user account (see Default User,6.2.5)
首次开机时，Q150T 从默认启动用户帐户启动（参见默认用户 6.2.5）.
Adding a User
添加用户
To create a new user account:
要创建新的用户帐户 ：
1. From the Home screen, tap on the System button
1. 在主屏幕上点击系统按钮.
2. Tap on the Users button. The Edit Users screen is displayed (seeFigure 6-6)
2. 点击用户按钮。此时将显示 “Edit Users” 屏幕（请参见图 6-6）.
3. Tap on
3. 点击
.此时将显示 Edit User Details （编辑用户详细信息） 屏幕.
4. Tap on the Username text box and use the on-screen keyboard to type the name for the user..
4. 点击用户名文本框 ， 然后使用屏幕键盘输入用户的名称 。
5. Select the privilege level for the new user from the Level dropdown list
5. 从“级别”下拉列表中选择新用户的权限级别.
6. Tap on the Full Name text box and use the on-screen keyboard to type the full name of the user..
6. 点击 “ 全名 ” 文本框 ， 然后使用屏幕键盘输入用户的全名 。
7. Tap on the Password text box and use the on-screen keyboard to type a password for the user’s account.
7. 点击密码文本框 ，然后使用屏幕键盘输入使用 r 帐户的密码 。
8. Repeat the password in the Confirm Password text box and tap on the Enter button
8. 在确认密码文本框中重复密码，然后点击 Enter 按钮.
9. Tap on the Save button to create the user account. Alternatively, tap on the Cancel button to close the on-screen keyboard without creating the account and return to the Edit Users screen.
9. 点击 “保存 ” 按钮创建用户帐户 ， 或者点击 “取消” 按钮关闭屏幕键盘 ，而不创建帐户并返回“ 编辑用户 ” 屏幕。
10. The Edit Users screen is displayed. Register further users as required.
10. 将显示 “编辑用户 ” 屏幕 ，根据需要注册更多用户 。
11. Tap on
11. 点击
可返回到 SystemProperties 屏幕或返回主屏幕 。
Q150T S/E/ES plus
Figure 6-6. Creating a user
图 6-6. 创建用户
Editing a User
编辑用户
To edit an existing user account:
要编辑现有用户帐户 ：
1. From the Home screen, tap on the System button
1. 在主屏幕上点击系统按钮.
2. Tap on the Users button. The Edit Users screen is displayed (seeFigure 6-6)
2. 点击用户按钮。此时将显示 “Edit Users” 屏幕（请参见图 6-6）.
3. Tap on the username of the account you want to edit. The Edit User Details screen is displayed.
3. 点击要编辑的账户的用户名此时将显示 “编辑用户详细信息 ”屏幕 。
4. Edit the Username, Level, or Fullname as required.
4. 根据需要编辑 Username、Level 或 Fullname。
5. To change the Password associated with the account, tap on the Edit password button. You will be required to enter to the existing password to be able to enter a new password.
5. 要更改与帐户关联的密码 ， 请点击 “编辑密码 ”按钮 ， 您需要输入现有密码才能输入新帕斯沃路。
6. Tap on the Save button to confirm the user account. Alternatively, tap on the Cancel button to discard any changes and return to the Edit Users screen
6. 点击“保存”按钮以确认用户帐户或者点击“取消”按钮以放弃任何更改并返回“编辑用户”屏幕.
7. The Edit Users screen is displayed. Edit further users as required
7. 此时将显示“编辑用户”屏幕根据需要编辑更多用户.
8. Tap on
8. 点击
自 return
返回 to
自 the
这 System
系统 Properties
性能 screen
屏幕 or
或 to
自 return
返回 to
自 the
这 home
家screen.
屏幕。
Deleting a User Acc
删除用户帐户ount
哦
To delete an existing user account:
要删除现有用户帐户 ：
1. From the Home screen, tap on the System button
1. 在主屏幕上点击系统按钮.
2. Tap on the Users button. The Edit Users screen is displayed (seeFigure 6-6)
2. 点击用户按钮。此时将显示 “Edit Users” 屏幕（请参见图 6-6）.
3. Tap on the username of the account you want to delete. The Edit User Details screen is displayed.
3. 点击要删除的账户的用户名 将显示 “编辑用户详细信息 ”屏幕 。
4. Tap on the Delete button.
4. 点击删除按钮。
5. The Edit Users screen is displayed
5. 此时将显示 Edit Users 屏幕.
6. Tap on
6. 点击
自 return
返回 to
自 the
这 System
系统 Properties
性能 screen
屏幕 or
或 to
自 return
返回 to
自 the
这 home
家screen.
屏幕。
Q150T S/E/ES plus
6.2.4
6.2.5
6.3
Login
登录
To log in as a different user:
要以其他用户身份登录 ：
● From the Home screen, tap on the Login button.
● 在主屏幕上 ，点击登录按钮。
● From elsewhere in the software, tap on
● 在软件的其他位置 ， 点击
The Change User screen is displayed. Use the on-screen keyboard to type your username and password and then tap on the Enter button.
显示更改用户屏幕使用屏幕键盘输入您的用户名和密码 ，然后点击 Enter 按钮。
Figure 6-7. Change User screen
图 6-7。 更改用户屏幕
Default User
默认用户
To select the user account active when the instrument is switched on:
要选择在仪器打开时处于活动状态的用户帐户 ：
1. From the Home screen, tap on the System button
1. 在主屏幕上点击系统按钮.
2. Tap on the Users button. The Edit Users screen is displayed (seeFigure 6-6)
2. 点击用户按钮。此时将显示 “Edit Users” 屏幕（请参见图 6-6）.
3. Tap on the‘rosette’icon
3. 点击 “rosette”图标
在要加载的用户配置文件旁边 ， 首先打开仪器 。
4. Tap on
4. 点击
可返回到 SystemProperties 屏幕或返回主屏幕 。
Properties
性能
The specific operation of the Q150T is determined by the settings of the active recipe. However, the default sputter settings and general hardware settings are configured through the System menu.
Q150T 的具体作取决于活动配方的设置 。 但是，错误溅射设置和常规硬件设置是通过系统模块配置的 。
Some parameters are specified at a system level, but can be overridden in the recipe. For example bleed pressure can be set in a sputter or glow discharge recipe, and this overrides the system default bleed pressure. Within properties, all parameters that are currently active are indicated by a "Global" icon. If this icon is crossed out in red, it indicates that the default value has been overridden in the active recipe.
某些参数在 system leve l 中指定 ，但可以在 recipe 中覆盖 。 例如 ， 可以在溅射或辉光显示配方中设置排放压力 ， 这将覆盖系统默认的排放压力 。 在属性中 ， 当前处于活动状态的所有参数都由 “Global” 图标指示 。 如果 this 图标以红色划掉 ， 则表示在活动配方中已覆盖默认值 。
Q150T S/E/ES plus
6.3.1 Sputter Parameters
6.3.1 溅射参数
These are the default settings used during sputter coating sequences. The Q150T uses these settings in all recipes of type: Timed Sputter and FTM Terminated Sputter unless overridden in the recipe (see page88)
这些是溅射镀膜序列中使用的默认设置 Q150T 在所有类型的配方中都使用这些设置：定时溅射和 FTM 终止溅射，除非在配方中被覆盖（参见第 88 页）.
To change the settings, tap System on the Home screen and then Properties. The System Properties screen consists of three pages; Sputter Parameters are displayed on
要更改设置， 请点击主屏幕上的系统 ， 然后点击属性系统属性屏幕由三页组成; 溅射参数显示在
the first page (seeFigure 6-8andTable 14)
第一页（见图 6-8 和表 14）.
Figure 6-8. Sputter Parameters (admin mode)
图 6-8.溅射参数（管理模式）
Table 14 Sputter Parameters (System Properties, page 1)
表 14 溅射参数（系统属性，第 1 页 ）
Name | Default Value | Minimum Value | Maximum Value | Comment |
Gas Bleed Time* (s) | 15 | 0 | 60 | Time Argon allowed to flow into chamber before plasma started |
Bleed Vacuum* | 1x10-2 | 2x10-2 | 5x10-1 | Pressure at which the chamber is maintained while the plasma is present |
Clean Current* (A) | 150 | 20 | 200 | Current applied during target cleaning phase |
Clean Time*(s) | 30 | 0 | 60 | Target cleaning time |
Clean discharge time* (s) | 20 | 15 | 90 | Wait period between cleaning pulses with plasma off and argon flowing. Only when Pulse Cleaning. |
Max pulse clean cycles* | 15 | 2 | 25 |
* Admin group level required to edit this property
* 编辑此属性需要 管理员组级别
1. To edit a parameter, tap on its value
1. 要编辑参数，请点击其值.
2. Change the value as required
2. 根据需要更改值.
3. When you edit a value, tap on the Confirm button to accept the change or on the Cancel button to restore the previous value
3. 当您编辑值时，点按 确认 按钮以接受更改，或点按 取消 按钮以恢复之前的值.
4. Edit other parameters as required
4. 根据需要编辑其他参数.
5. Tap on
5. 点击
自 return
返回 to
自 the
这 System
系统 Properties
性能 screen
屏幕 or
或 to
自 return
返回 to
自 the
这 home
家screen.
屏幕。
6.3.2 Vacuum Parameters
6.3.2 真空参数
These are the default settings for pumping/venting cycles used in both sputter coating and evaporation sequences. The Q150T uses these settings in all recipes.
这些是溅射镀膜和蒸发序列中使用的泵送 / 排气循环的默认设置 。Q150T 在所有配方中都使用相同的设置 。
To change the settings, tap System on the Home screen and then Properties. The System Properties screen consists of three pages; Vacuum Parameters are displayed on the second page (see Figure 6-9 and Table 15). To display the list, tap on the“2” button.
要更改设置， 请点击主屏幕上的系统 ， 然后点击属性系统属性页面由三个页面组成; 真空参数显示在第二页上 （ 参见图 6-9 和表 15）。 要显示列表 ， 请点击 “2” 按钮。
Figure 6-9. Vacuum parameters (admin mode)
图 6-9.真空参数 （admin mode）
Table 15 Vacuum parameters (System Properties, page 2)
表 15 真空参数 （系统属性，第 2 页）
Name | Default Value | Minimum Value | Maximum Value | Comment |
Operational Vacuum (mbar)* | 1x10-3 | 8x10-3 | 2x10-1 | Vacuum level that must be reached before coating commences |
Safe Outgas threshold (mbar)* | 1x10-0 | 5x10-5 | 2x10-3 | Vacuum level that must be reached before turbo ON. |
Vent Time (s)* | 70 | 1 | 240 | Time to vent the chamber |
Flush Time (s)* | 30 | 1 | 60 | Chamber flush time |
Flush Pump time (s)* | 30 | 1 | 120 | Chamber pump time between flushes. |
Outgassing time (s)* | 120 | 1 | 600 | Time waited after the operational vacuum is achieved |
Pump Hold Time (hrs)* | 24 | 0 | 72 | Wait time before process begins |
Max Pumpdown Time (s)** | 600 | Maximum time the system will wait for the chamber to reach the operational vacuum | ||
Max Pump Time to 200 mbar (s)** | 30 | Time to chamber has to reach 200mbar or aborts | ||
Bleed Gas Flush Vac (mbar)* | 5 | 0.1 | 100 | Vacuum the system will pump down to before venting with nitrogen during a flush |
Bleed Gas Flush Time (s)* | 15 | 5 | 60 | Time allowed to flush chamber with argon |
Enable Pulsed | Yes | No | Yes | Pulsed venting which slows |
Name | Default Value | Minimum Value | Maximum Value | Comment |
Venting* | turbo pump safely | |||
Vent Pulse Time (ms)* | 500 | Vent pulse period | ||
Vent Off Time (ms)* | 1000 | 0 | 3000 | Vent off time during pulse vent |
* Admin group level required to edit this property
* 编辑此属性需要 管理员组级别
** Engineer (or higher) privileges required to edit this property
** 编辑此属性所需的 工程师 （ 或更高级别） 权限
1. To edit a parameter, tap on its value (you may need to scroll down the screen to see all the properties)
1. 要编辑参数， 请点击其值 （ 您可能需要向下滚动屏幕才能看到所有属性）
2. Change the value as required
2. 根据需要更改值.
3. When you edit a value, tap on the Confirm button to accept the change or on the Cancel button to restore the previous value
3. 当您编辑值时，点按 确认 按钮以接受更改，或点按 取消 按钮以恢复之前的值.
4. Edit other parameters as required
4. 根据需要编辑其他参数.
5. Tap on
5. 点击
自 return
返回 to
自 the
这 System
系统 Properties
性能 screen
屏幕 or
或 to
自 return
返回 to
自 the
这 home
家screen.
屏幕。
6.3.3 Hardware Parameters
6.3.3 硬件参数
These settings define the configuration of your instrument. The Q150T uses these settings in all recipes of type: Timed Sputter and FTM Terminated Sputter
这些设置定义仪器的配置。Q150T 在所有类型的配方中都使用这些设置：定时溅射和 FTM 端接溅射.
To change the settings, tap System on the Home screen and then Properties. The System Properties screen consists of three pages; Hardware Parameters are displayed on the third page (seeFigure 6-10andTable 16)
要更改设置，请点击主屏幕上的系统，然后点击属性系统属性屏幕由三个页面组成;硬件参数显示在第三页（见图 6-10 和表 16）.
Figure 6-10. Hardware Parameters (admin mode)
图 6-10.Hardware Parameters （admin mode）
1. To edit a parameter, tap on its value (you may need to scroll down the screen to see all the properties)
1. 要编辑参数， 请点击其值 （ 您可能需要向下滚动屏幕才能看到所有属性）
2. Change the value as required
2. 根据需要更改值.
3. When you edit a value, tap on the Confirm button to accept the change or on the Cancel button to restore the previous value
3. 当您编辑值时，点按 确认 按钮以接受更改，或点按 取消 按钮以恢复之前的值.
4. Edit other parameters as required
4. 根据需要编辑其他参数.
5. Tap on
5. 点击
自 return
返回 to
自 the
这 System
系统 Properties
性能 screen
屏幕 or
或 to
自 return
返回 to
自 the
这 home
家screen.
屏幕。
Table 16 Hardware Parameters (System Properties, Page 3)
表 16 硬件参数（系统属性 ， 第 3 页）
Name | Default Value | Minimum Value | Maximu m Value | Comment |
Serial Number** | Read only: identification code for instrument | |||
Backlight Brightness | 50 | 1 | 100 | Screen brightness |
Screen saver Delay (s)* | 600 | 0 | 100000 | Period of instrument activity before screensaver is displayed |
Vacuum Gauge Type | Read only: displays installed gauge type | |||
Use Turbo Pumping | Yes | No | Yes | Apply Turbo pump or use rotary pumping only |
PSU Temperature | Read only: displays power supply temperature | |||
Turbo Present** | Yes | No | Yes | Turbo pump installed? |
FTM Present** | No | No | Yes | FTM installed? |
Stage Rotate | Yes | No | Yes | Set the state of the stage unless overridden in the process recipe |
Stage Rotate Speed | 70 | 0 | 100 | Sets the speed of the stage unless overridden in the process recipe |
Available Targets* | 1 | 1 | 3 | Sets the number of auxiliary sputter inserts allowing the whole insert to be changed making the use of multiple materials easier |
Target A | Target material. | |||
Target B | N/A | Not applicable for Q150T | ||
Target C | N/A | Not applicable for Q150T. |
* Admin group level required to edit this property
* 编辑此属性需要 管理员组级别
** Engineer (or higher) privileges required to edit this property
** 编辑此属性所需的 工程师 （ 或更高级别） 权限
Q150T S/E/ES plus
6.4 History
6.4 历史
To view the process log, listing information about the recipes run on the Q150T plus
查看有关在 Q150T plus 上运行的配方的工艺日志列表信息:
1. From the Home screen (seeFigure 3-1), tap on History
1. 在主屏幕（见图 3-1）点击历史记录.
2. The Process History screen is displayed (see Figure 6-11). Process events are
2. 显示 ProcessHistory 屏幕 （ 见图 6-11）。 进程事件包括
listed in order with the most recent at the top of the list. You may need to scroll down the list to see earlier events.
按顺序列出 ， 最近的事件位于列表顶部您可能需要向下滚动列表才能查看较早的事件。
Figure 6-11. Process History screen (left) and Detailed View tab (right)
图 6-11.P 过程历史记录屏幕（左）和 “详细视图”选项卡（右）
3. To view the details of a particular logged event tap on it. The Detailed View tab is displayed (see Figure 6-12). This shows the events that occurred during the process. The actual data displayed will depend on the process type.
3. 要查看特定记录事件的详细信息 ， 请点击它详细视图选项卡 （见图 6-12） 这显示了过程。 显示的实际数据将取决于流程类型。
Figure 6-12. Process View (left) and Message View (right) tabs
图 6-12.流程视图（左）和消息视图（右）选项卡
4. Tap on the Process View tab to view the recipe parameters applied during the selected event.
4. 点按 ProcessView 选项卡 ， 查看在选定事件期间应用的配方参数 。
5. Tap on the Message View tab for summary information including any error and warning messages if any problems were encountered during the process.
5. 点按消息视图选项卡以获取摘要信息 ，包括任何错误和警告消息 （如果在此过程中遇到任何问题 ）。
6. Tap on
6. 点击
自 return
返回 to
自 the
这 Process
过程 History
历史 screen
屏幕 or
或 on
上 to
自 display
显示 the
这 Home
家screen.
屏幕。
Q150T S/E/ES plus
Accessories
辅料
The Q150T can be configured for various sputtering and evaporation applications. This section describes the installation of:
Q150T 可针对各种溅射和蒸发应用进行配置本节介绍安装方法 ：
● Sputter insert pre-installed as standard on Q150T S and Q150T ES models. Includes instructions for changing the target. Additional sputter insert available (10453).
● Q150TS 和 Q150TES 型号标配溅射插件包括跟踪靶材的说明。 提供额外的溅射插件 （10453）。
● Carbon rod insert for 3mm rods (10033) pre-installed as standard on Q150T E models. Carbon rod insert for 6mm rods (10456).
● 用于 3mm 杆的碳杆插件 （10033） 预装在 Q150TE 型号上 用于 6mm 杆的碳杆插件 （10456）。
● Carbon fibre insert (10455)
● 碳纤维嵌件 （10455）
● Metal evaporation insert (10457) including its configuration for both downwards and upwards evaporation, and the installation of a wire basket or molybdenum boat).
● 金属蒸发插件 （10457）， 包括其向下和向上蒸发的配置 ， 以及安装金属丝篮或钼舟 ）。
● Glow discharge insert (10262).
● 发光放电插件 （10262）。
● Rotacota stage (10360)
●Rotacotastage（10360）
● Slide stage (10358)
● 滑台 （10358）
● Four wafer stage and gear box (10458)
● 四晶圆台和齿轮箱 （10458）
● Specimen stage with adjustable tilt (10357)
● 可调节倾斜度的样品台 （10357）
● Film thickness monitor (10454)
● 膜厚显示器 （10454）
● Extended height cylinder (10429)
● 加长高度气缸 （10429）
● Full range vacuum gauge assembly (10428)
● 全系列真空计总成 （10428）
● Rotating vacuum spigot (10422)
● 旋转式真空龙头 t（10422）
Sputter InsertThis section describes the installation of the standard sputter head supplied with Q150TS and Q150T ES instruments
溅射插件本节介绍了 Q150TS 和 Q150T ES 仪器随附的标准溅射头的安装.
DANGER MAGNETIC FIELD!
危险磁场 ！
Strong magnetic fields can disturb devices like pacemakers or impair their function.
强磁场会干扰心脏起搏器等设备或损害其功能。
Maintain a safety distance of >10 cm between the magnet and the pacemaker or prevent the influence of strong magnetic fields by antimagnetic shielding.
在磁网和起搏器之间保持 >10 cm 的安全距离 ，或通过防磁屏蔽防止强磁场的影响 。
WARNING - HIGH VOLTAGES AND HIGH VACUUM! This equipment produces high voltages and high vacuum in its operation. |
Q150T S/E/ES plus
Figure 7-1. Top view of the sputter insert
图 7-1. 溅射插件的俯视图
Sputter insert lead
溅射插入引线
Securing button
固定按钮
Sputter insert
溅射插件
Latch
门闩
Lifting handle
提升手柄
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Press down firmly on the top cover to release the latch
2. 用力按下顶盖以松开闩锁.
3. Lift the top cover and rest it against its stop
3. 提起顶盖并将其靠在挡块上.
4. Turn the two securing buttons to release the installed insert and remove the insert (seeFigure 7-1)
4. 转动两个固定按钮以释放已安装的插件并取出插件（见图 7-1）.
Q150T ES users only: If the insert is a carbon rod type you may have to remove the rods first (see page59). To do this, check that the securing buttons are restraining the insert and open the lid assembly and rest it against the top cover assembly. Then, using a 2.5mm hex key, release the rod clamping screws and withdraw the rods. Close the lid assembly and release the insert by turning the securing buttons. Now remove the insert. |
5. Prepare the sputter insert for installation by removing from any packaging, pIastic bags etc. Check the 1O’ring in the outer ring of the Iid assembIy for damage or debris and clean or replace as required.
5. 从任何包装袋等中取出溅射插件 ， 准备安装 。 检查 Iid 组件外环中的 1O 形圈是否有损坏或碎屑 ， 并根据需要清洁或更换 。
6. To fit a target (we recommend you wear latex gloves to do so):
6. 要适合目标 （ 我们建议您戴乳胶手套 ）：
a. Unscrew the target clamp ring (seeFigure 7-2)
一个。拧下目标 clamp 环（见图 7-2）.
b. Place a new target centrally on the holder. Hold it in place with one finger through the clamp ring.
b. 将新目标放在支架的中央用一根手指穿过夹环将其固定到位 。
c. Screw the clamp ring firmly back in place. If the target thickness is greater than 0.3mm then one or more spacers (Part No. A4117193) should be fitted between the dark space shield and the sputter insert to maintain a 1.5mm gap between the inside face of the dark space shield and the target clamp ring
c. 将 clamp 环牢固地拧回原位。如果目标厚度大于 0.3 毫米，则应在暗空间屏蔽层和溅射插件之间安装一个或多个垫片（零件号 A4117193），以在暗空间屏蔽层的内表面和目标夹紧环之间保持 1.5 毫米的间隙.
7. Place the insert in position in the outer ring of the lid assembly carefully locating the M3 screw head in the rim of the insert in the slot to the right of the outer ring
7. 将插件放入盖子组件的外圈中，小心地将 M3 螺钉头定位在外圈右侧槽中插件边缘.
8. Lock the insert in position by turning the securing buttons until their flanges overlap the insert.
8. 转动固定按钮 ， 直到其凸缘与嵌件重叠， 将嵌件锁定到位 。
9. Plug the sputter insert lead into the socket on the hinge assembly
9. 将溅射插入引线插入铰链组件上的插座中.
溅射插件
Holder
持有
溅射插入式引线 DarkspaceshieldspacerTargetTargetclampringDarkspaceshield
Figure 7-2. Sputter insert and target assembly
图 7-2.溅射插入 nd 目标组件
7.2 Carbon Rod Insert
7.2 碳棒嵌件
This section describes the installation of the carbon rod insert supplied with Q150T E and Q150T ES instruments. There are two inserts designed to accommodate 3mm carbon rods (10033) or 6mm rods (10456).
本节介绍了 Q150TE 和 Q150TES 仪器随附的碳棒插件的安装有两个插件设计用于容纳 3mm 碳棒 （10033） 或 6mm 棒材 （10456）。
To install the carbon rod insert:
要安装碳杆插件：
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Press down firmly on the top cover to release the latch
2. 用力按下顶盖以松开闩锁.
3. Lift the top cover and lay back against its stop
3. 提起顶盖并靠在挡块上.
4. Turn the two securing buttons to release the installed insert and remove the insert.
4. 转动两个固定按钮 ， 松开已安装的插件并移除插件。
5. Prepare the carbon rod insert for installation by removing from any packaging, pIastic bags etc. Check the 1O’ring in the outer ring of the Iid assembIy for damage or debris and clean or replace as required.
5. 从任何包装袋等中取出碳棒插件 ， 准备安装 。 检查 Iid 组件外环中的 1O 形圈是否有损坏或碎屑 ， 并根据需要进行清洁或更换 。
6. 准备两根碳棒（见第 60 页）.
WARNING!
警告！
To avoid the possibility of carbon particulate entering the delicate electronics of any laboratory equipment, clean the carbon rod insert away from the instrument preferably in a fume hood or under an extraction system. As fine particulate may be generated, users should carry out their own risk assessment and use suitable PPE.
为避免碳颗粒进入任何实验室设备的精密电子设备的可能性 ，最好在通风橱中或抽气装置下清洁碳棒插件系统。 可能会产生细颗粒物， 用户应进行自己的风险评估并使用合适的 PPE。
Q150T S/E/ES plus
7. Install the carbon rods (seeFigure 7-3)
7. 安装碳棒（见图 7-3）:
a. Install the flat-ended carbon rod into the fixed terminal.
a. 将平头碳棒安装到固定期限内。
b. Install the sharpened carbon rod into the moveable terminal so that the shaped end touches the other rod.
湾。 将锋利的碳棒安装到可移动端子中 ， 使成型的一端接触另一根杆。
c. Tension the sliding clamp assembly by sliding it to the right to the full extent of the dowels. Tighten the clamp screw to fix the carbon rod in position.
c. 通过将滑动夹组件向右滑动至销钉的整个范围来张紧滑动夹具组件 。 拧紧夹紧螺钉以将碳棒固定到位。
8. Place the insert in position in the outer ring of the lid assembly carefully locating the M3 screw head in the rim of the insert in the slot to the right of the outer ring. Lock the insert in position by turning the securing buttons until their flanges overlap the insert.
8. 将插件放置在盖子组件外圈中的位置， 小心地将 M3 螺钉头定位在插槽中插件边缘的位置外圈的右侧 。 通过转动固定按钮直到其法兰与嵌件重叠， 将嵌件锁定到位 。
9. Close the lid assembly onto the glass chamber
9. 将盖子组件合上玻璃室.
10. Check that the copper terminal contacts on the top of the insert and in the underside of the top cover are clean and free from damage and that the top faces are flat for good electrical contact.
10. 检查插件顶部和顶盖底部的铜端子触点是否清洁无损坏 ， 以及顶部是否面是平坦的，具有良好的电气接触。
11. Close the top cover assembly and press firmly down to secure the latch
11. 合上顶盖组件并用力向下按压以固定闩锁.
固定夹具夹紧螺钉
Carbon rods
碳棒
夹紧螺钉滑动夹紧组件
Figure 7-3. Carbon Rod Insert
图 7-3. 碳棒嵌件
7.2.1 用于脉冲 E 蒸发的碳棒成型
WARNING!
警告！
It is essential that you shape the tips of the carbon rods to the correct profile to minimise the possibility of damage to the instrument due to excessive currents.
您必须将碳棒的尖端塑造成正确的轮廓 ， 以尽量减少因过大电流而对仪器造成损坏的可能性 。
WARNING!
警告！
To avoid the possibility of carbon particulate entering the delicate electronics of any laboratory equipment, clean the carbon rod insert away from the instrument preferably in a fume hood or under an extraction system. As fine particulate may be generated, users should carry out their own risk assessment and use suitable PPE.
为避免碳颗粒进入任何实验室设备的精密电子设备，最好在烟雾中或在抽气系统下清洁碳棒插件 。由于可能会产生 fin e 颗粒 ， 使用者应进行自己的风险评估并使用合适的 PPE。
Q150T S/E/ES plus
For pulsed evaporation, one rod should be shaped to 1.2mm diameter x 5 mm long using the shaper with the blue handle. The other should be flattened as shown in Figure 7-4
对于脉冲蒸发，应使用带有蓝色手柄的整形器将一根棒塑造成直径为 1.2 mm x 长 5 mm 的棒。另一个应该如图 7-4 所示平整.
Figure 7-4. Recommended Carbon Rod shapes
图 7-4.推荐的汽车棒形状
The accessory pack contains a rod shaper (see Figure 7-5) that will accept 3mm and 6mm rods. To enable the shaper to accept 6mm rods, remove the collet by unscrewing the collet screw and pulling the collet out.
附件包包含一个杆成型器 （见图 7-5）， 可以接受 3 毫米和 6 毫米的杆 。 为了使整形机能够接受 6mm 的杆， 请拧下夹头螺钉并拉动夹头 ， 以移除夹头 。
Figure 7-5. Carbon Rod Shaper (S8650/S8651))
图 7-5.碳棒成型机 （S8650/S8651））
To shape a carbon rod:
要塑造碳棒：
1. Cut a 50mm length of rod.
1. 剪下 50 毫米长的杆。
Use only Quorum rods due to the varying diameter and quality of other manufacturer’s rods. Quorum supply rods in two sizes: 3mm (C5422) and 6mm (C5423). |
2. Hold the shaper stationary and insert the carbon rod until it touches the cutters. Pull the cutter shaft out to its full extent.
2. 保持成型机静止不动，插入碳棒 ，直到它接触到刀具。 将切割器 shaft 拉出至其最大范围。
徐徐 tighten
收紧 the
这 thumb
拇指 screw
螺 杆 to
自 hold
拿 the
这 carbon
碳 rod
杆 in
在 place
地方.
4. Holding the shaper body and, with very little force, gently turn the black knob on the end of the shaper clockwise (when viewed face on).
4. 握住剃齿机主体 ， 用 很小的力，轻轻顺时针转动剃齿机末端的黑色旋钮 （ 正面观察时）。
5. Keep turning the knob until the tip of the rod touches the end of the cutter shaft (5mm) as shown opposite. Clear the carbon rod dust as necessary.
5. 持续转动旋钮 ，直到杆尖接触到刀轴的末端 （5mm）， 如对面所示 。 根据需要清除碳棒灰尘 。
6. Undo the thumb screw and withdraw the rod carefully to avoid damaging the newly formed tip.
6. 松开翼形螺钉并小心地抽出杆 ， 以免损坏新形成的尖端。
如果 the
这 rod
杆 tip
提示 should
应该 break
破 in
在 the
这 cutter
刀具, it
它 can
能 be
是 removed
删除 by
由 unscrewing
拧松 the
这brass
黄铜 coupling,
耦合 removing
删除 the
这 cutter
刀具 and
和 pushing
推动 out
外 the
这 broken
破碎 rod
杆 tip,
提示 while
而 avoid
避免 damaging the teeth
损害牙齿 of the
的 cutter.
刀具。
WARNING!
警告！
TAKE CARE WHEN HANDLING THE CUTTER:
处理刀具时要小心：IT IS VERY SHARP.
它非常尖锐。
Shaping Carbon Rods for Ramped Evaporation
用于斜坡蒸发的碳棒成型
When shaping rods for ramped evaporation, it is necessary to produce a 1.4mm diameter x 5mm long tip to the rod using the shaper with the red handle. Remove the yellow protective cap by pulling the tab. To prevent accidents, replace the cap on the unused cutter. The procedure is the same as that described in the previous section.
在为斜坡蒸发成型的杆上时 ， 必须使用带有红色手柄的整形器在杆上产生一个直径为 1.4mm x 长 5 mm 的尖端 e。 通过拉动卡舌获得黄色保护帽 。为防止发生意外，请更换未使用的刀具的盖子 。 该过程与上一节中描述的过程相同 。
Fitting the Carbon Fibre InsertOuter ring O-ringClamps with M3 tension adjusting screws
用 M3 个张力调节螺钉安装碳纤维嵌件外圈 O 形圈夹
Figure 7-6. Carbon fibre insert
图 7-6. 碳纤维 e 嵌件
The carbon fibre insert (10455) is designed for carbon evaporation from carbon fibre woven cord (seeFigure 7-6)
碳纤维插件 （10455） 设计用于从碳纤维编织帘线中蒸发碳（见图 7-6）.
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Press down firmly on the top cover to release the latch
2. 用力按下顶盖以松开闩锁.
3. Lift the top cover and lay back against its stop
3. 提起顶盖并靠在挡块上.
4. Turn the two securing buttons to release the installed insert and remove the insert.
4. 转动两个固定按钮 ， 松开已安装的插件并移除插件。
5. 从任何包装、 塑料袋等中取出 ， 准备安装碳纤维插件检查盖子组件外环中的 “O”形圈是否损坏或碎屑 ， 然后清洁或更换必填。
WARNING!
警告！
To avoid the possibility of carbon particulate entering the delicate electronics of any laboratory equipment, load or clean the carbon fibre insert away from the instrument preferably in a fume hood or under an extraction system. As fine particulate may be generated, users should carry out their own risk assessment and use suitable PPE.
为避免碳颗粒进入任何实验室设备的精密电子设备的可能性，请将碳纤维插件从设备中加载或清洁 ， 最好在通风橱中或在抽气系统中。由于细颗粒物可能是通用的 ，因此使用者应进行自己的风险评估并使用合适的个人防护装备。
6. Fit the carbon cord (C5421) between the two clamps. Do not pull the cord tight or induce it to loop. For most applications, the spring-loaded clamps adequately secure the cord and provide the correct tension. However, for controlled pulse evaporation, you will achieve more repeatable results if you remove the springs and tighten the clamps using the screws.
6. 将碳素绳 （C5421） 套在两个夹子之间不要拉紧绳索或使其绕圈 。 对于大多数应用 ， 弹簧加载的夹子可以充分固定绳索并提供正确的张力。 然而， 对于受控脉冲蒸发， 如果您卸下弹簧并使用螺钉拧紧夹具 ， 您将获得更可重复的结果 。
7. To prevent excessive fraying of the cord, cut it to length (35mm) after clamping.
7. 为防止绳子过度磨损 ，夹紧后将其剪成 （35mm） 的长度。
Q150T S/E/ES plus
8. Place the insert in position in the outer ring of the lid assembly carefully locating the M3 screw head in the rim of the insert in the slot to the right of the outer ring
8. 将插件放入盖组件的外圈中，小心地将 M3 螺钉头定位在外圈右侧槽中的插件边缘.
9. Lock the insert in position by turning the securing buttons until their flanges overlap the insert.
9. 转动固定按钮 ， 直到其凸缘与嵌件重叠， 将嵌件锁定到位 。
10. Close the lid assembly on to the glass chamber assembly
10. 将盖子组件合上玻璃腔室组件.
11. Check the copper terminal contacts on the top of the insert are clean and free from damage (they must have a flat top face) and that the contacts in the underside of the top cover assembly are also clean and flat.
11. 检查插件顶部的铜端子触点是否干净无损坏 （ 它们必须具有平坦的顶面 ）， 以及触点是否在顶盖组件的底面也干净平整。
7.4 Metal Evaporation Insert
7.4 金属蒸发插件
This section describes the installation of the metal evaporation insert (10457) designed for downwards evaporation (seeFigure 7-7). To install the stage:
本节介绍用于向下蒸发的金属蒸发插件 （10457） 的安装 （见图 7-7）。 要安装舞台，请执行以下作：
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Press down firmly on the top cover to release the latch. (See note below.).
2. 用力按下顶盖以松开闩锁 （ 见下面的注释 ）。
3. Lift the top cover and rest it against its stop
3. 提起顶盖并将其靠在挡块上.
4. Turn the two securing buttons to release the installed insert and remove the insert.
4. 转动两个固定按钮 ， 松开已安装的插件并移除插件。
5. Prepare the metal evaporation insert for installation by removing from any packaging, plastic bags etc. Check the‘O’ring in the outer ring of the lid assembly for damage or debris and clean or replace as required.
5. 从任何包装、 塑料袋等中取出金属蒸发插件 ， 准备安装检查盖子组件外环中的 “O”形圈是否损坏或碎屑 ， 然后清洁或更换根据需要 。
6. Place the insert in position in the outer ring of the lid assembly. Carefully align the M3 screw head in the rim of the insert with the slot on the right of the outer ring. Lock the insert in position by turning the securing buttons until their flanges overlap the insert.
6. 将插件放置在盖子组件外圈中的位置小心地将插件边缘的 M3 螺钉头与右侧的插槽对齐外环 。 通过转动固定按钮直到其法兰与嵌件重叠， 将嵌件锁定到位 。
Clamp/M4 screw Wire basket
卡箍 /M4 螺丝 网篮
Figure 7-7. Fitting the metal evaporation insert for downwards evaporation
图 7-7.安装金属蒸发插件以进行向下蒸发
7.4.1 Installing a Wire Basket
7.4.1 安装钢丝篮
To install a wire basket or molybdenum boat:
要安装金属丝篮或钼舟：
1. Open the lid assembly and lay back against its stop
1. 打开盖子组件并靠在挡块上.
2. Slacken the two M4 socket screws in the terminal clamps
2. 松开端子夹中的两个 M4 内六角螺钉.
3. Fit the wire basket so that it lies diagonally across the screws and between the clamps and the terminals (seeFigure 7-7)
3. 安装线篮，使其对角线穿过螺钉，夹子和端子之间（见图 7-7）.
4. Tighten the two M4 screws
4. 拧紧两颗 M4 螺丝.
5. Close the lid assembly on to the glass chamber assembly
5. 将盖子组件合上玻璃腔室组件.
6. Check the copper terminal contacts on the top of the insert are clean and free from damage (they must have a flat top face) and that the contacts in the underside of the top cover assembly are also clean and flat.
6. 检查插件顶部的铜端子触点是否干净且无损坏 （ 它们必须具有平坦的顶面 ）， 并且触点是否在顶盖组件的底面也干净平整。
7. Close the top cover assembly and press firmly down to secure the latch.
7. 关闭顶盖组件并用力向下按压以固定闩锁。
7.4.2 Installing a Molybdenum Boat for Aperture Cleaning
7.4.2 安装钼舟进行孔径清洁
To install a molybdenum boat:
要安装钼舟：
1. Open the lid assembly and lay back against its stop
1. 打开盖子组件并靠在挡块上.
2. Slacken the two M4 socket screws in the terminal clamps
2. 松开端子夹中的两个 M4 内六角螺钉.
3. Fit the molybdenum boat between the screws and between the clamps and the terminals.
3. 将钼舟安装在螺钉之间以及夹子和端子之间 。
4. Tighten the two M4 screws
4. 拧紧两颗 M4 螺丝.
5. Close the lid assembly on to the glass chamber assembly
5. 将盖子组件合上玻璃腔室组件.
6. Check the copper terminal contacts on the top of the insert are clean and free from damage (they must have a flat top face.) and that the contacts in the underside of the top cover assembly are also clean and flat.
6. 检查插件顶部的铜端子触点是否干净且无损坏 （ 它们必须具有平坦的顶面 ）。 并且顶盖组件下侧的触点也干净平整。
7. Close the top cover assembly and press firmly down to secure the latch
7. 关闭顶盖组件并用力向下按压以固定闩锁.
7.4.3 Adapting the Insert for Upwards Evaporation
7.4.3 调整 Upwards 蒸发的插件
Install the evaporation insert as described previously. To adapt the insert for upwards evaporation:
如前所述安装蒸发插件 。 调整插件以向上蒸发：
1. Remove the two terminal clamps and replace with the electrode extensions (seeFigure 7-8)
1. 拆下两个端子夹，更换电极延长件（见图 7-8）.
2. Fit the stage assembly to the hole in the centre of the insert shield
2. 将载物台组件安装到插件护罩中心的孔中.
3. Fit the wire basket or molybdenum boat to the electrode extensions as described above.
3. 如上所述 ，将金属丝篮或钼舟安装到电极延长件上。
4. If an FTM is fitted, you will need to reposition it as described below
4. 如果安装了 FTM，您将需要按照以下说明重新定位它.
5. Close the lid assembly on to the glass chamber assembly
5. 将盖子组件合上玻璃腔室组件.
6. Check the copper terminal contacts on the top of the insert are clean and free from damage, (They must have a flat top face.) and that the contacts in the underside of the top cover assembly are also clean and flat.
6. 检查插件顶部的铜端子触点是否清洁且无损坏 （ 它们必须具有平坦的顶面 。 并且顶盖组件 mbly 底部的触点也干净平整。
7. Close the top cover assembly and press firmly down to secure the latch
7. 关闭顶盖组件并用力向下按压以固定闩锁.
7.4.4 Relocating the FTM
7.4.4 重新定位 FTM
If you want to use an FTM with the metal evaporation insert adapted for upwards evaporation you will need to reposition it as shown inFigure 7-8.
如果您想使用带有适用于向上蒸发的金属蒸发插件的 FTM，则需要重新定位它，如图 7-8 所示 。
1. Remove the glass chamber assembly
1. 拆下玻璃腔室组件.
2. Unplug the FTM’s lead from the BNC socket and remove the existing crystal holder from its bracket.
2. 从 BNC 插座上拔下 FTM 的引线 ，并从支架上取下现有的晶体支架 。
3. Remove the two screws near the inside diameter of the glass chamber holding the turbo shield in place and replace with two M3 x 20 hex spacers
3. 拆下将涡轮增压罩固定到位的玻璃室内径附近的两个螺钉，然后更换两个 M3 x 20 六角垫片.
4. Remove the existing crystal holder bracket
4. 取下现有的晶体支架.
5. Fit the new crystal holder bracket using two M3x8 socket cap screws
5. 使用两个 M3x8 内六角螺钉安装新的晶体支架.
6. Attach the FTM lead to the BNC connector
6. 将 FTM 引线连接到 BNC 连接器.
7. Attach the circular heat shield to the two hex spacers fitted previously with two M3x6 socket cap screws having first fed the FTM lead through the hole provided.
7. 将圆形隔热罩连接到之前安装的两个六角垫片上， 使用两个 M3x6 内六角螺钉 ， 首先将 FTM 引线穿过提供的孔 。
8. Pass the FTM lead through the hole in the crystal holder bracket and fix to the crystal holder.
8. 将 FTM 引线穿过晶体支架支架上的孔并固定在晶体支架上 。
9. Fit the crystal holder to the bracket with two M2.5 x 12 socket cap screws
9. 用两颗 M2.5 x 12 内六角螺钉将晶体支架安装到支架上.
10. Refit the glass chamber assembly
10. 重新安装玻璃室组件.
外圈 O 形圈样品架 FTM 电极延长线篮
Figure 7-8. Metal evaporation insert adapted for upwards evaporation
图 7-8.适用于向上蒸发的 Meta l 蒸发插件
Q150T S/E/ES plus
7.5 Glow Discharge Insert
7.5 辉光放电插件
This section describes the installation of the glow discharge insert (Part No. 10262).
本节介绍辉光排放插件 （ 部件号 10262） 的安装 。
DANGER MAGNETIC FIELD!
危险磁场 ！
Strong magnetic fields can disturb devices like pacemakers or impair their function.
强磁场会干扰心脏起搏器等设备或损害其功能。
Maintain
保持 a safety
安全 distance
距离 of >10
>10 cm
厘米 betw
打赌een the magnet and the
magnet 和 pacemaker
起搏器 or
或 prevent
防止 the
这 influence
影响 of
之 strong
强 magnetic
agnetic 不可知 fields
领域 by
由 antimagnetic shielding.
防磁屏蔽。
WARNING - HIGH VOLTAGES AND HIGH VACUUM! This equipment produces high voltages and high vacuum in its operation. |
Figure 7-9. Glow discharge insert
图 7-9。 辉光放电插件
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Press down firmly on the top cover to release the latch
2. 用力按下顶盖以松开闩锁.
3. Lift the top cover and rest it against its stop
3. 提起顶盖并将其靠在挡块上.
4. Turn the two securing buttons to release and remove the installed insert (see Figure 7-1)
4. 转动两个固定按钮以释放和移除已安装的插件（见图 7-1）.
Q150T ES users only: If the insert is a carbon rod type you may have to remove the rods first (see page59). To do this, check that the securing buttons are restraining the insert and open the lid assembly and rest it against the top cover assembly. Then, using a 2.5mm hex key, release the rod clamping screws and withdraw the rods. Close the lid assembly and release the insert by turning the securing buttons. Now remove the insert. |
Q150T S/E/ES plus
5. Prepare the glow discharge insert for installation by removing from any packaging, plastic bags etc. Check the‘O’ring in the outer ring of the lid assembly for damage or debris and clean or replace as required.
5. 从任何包装、 塑料袋等中取出 ， 准备安装发光放电插件检查盖子组件外环中的 “O”形圈是否损坏或碎屑 ， 然后清洁或更换根据需要 。
6. Remove the shutter by unscrewing the two retaining M3 screws (see Figure 7-10).
6. 拧下两个固定 M3 螺钉 ，取下百叶窗 （ 见图 7-10）。
Place the insert in position in the outer ring of the lid assembly carefully locating the M3 screw head in the rim of the insert in the slot to the right of the outer ring
将插件放入盖子组件的外圈中，小心地将 M3 螺钉头定位在外圈右侧插槽中插件边缘.
7. Lock the insert in position by turning the securing buttons until their flanges overlap the insert.
7. 转动固定按钮 ， 直到其凸缘与嵌件重叠， 将嵌件锁定到位 。
8. Plug the insert lead into the socket on the hinge assembly
8. 将插入导线插入铰链组件上的插座.
铰链组件 Shutter
Retaining screws
固定螺钉
Figure 7-10. Removing the shutter
图 7-10. 取下快门
Q150T S/E/ES plus
7.6 Rotacota Stage
7.6Rotacota 阶段
The Rotacota stage (10360) is an offset rotating stage, with tilting sample holder, designed to improve the even distribution of sputtering or evaporation (see Figure 7-11).
Rotacota 载物台 （10360） 是一个偏置旋转载物台 ， 带有倾斜样品架 ，旨在改善溅射或蒸发的均匀分布 （见图 7-11）。
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Open the top cover fully so it rests against its backstop
2. 完全打开顶盖，使其靠在逆止器上.
3. Remove any installed sample stage by lifting carefully upwards
3. 小心地向上提起，移除所有已安装的样品台.
4. Fit the Rotacota stage
4. 安装 Rotacota 舞台:
a. Locate its shaft in the top of the stage rotation drive spigot protruding from the baseplate.
一个。 将其轴定位在从底板突出的载物台旋转驱动龙头的顶部 。
b. With a twisting motion, push it gently down until the base collar rests on the baseplate with the location cut-out on the stage aligned with the M3 cap head screw
b.以扭转的动作，轻轻向下推动，直到底座环靠在底板上，舞台上的位置切口与 M3 帽头螺钉对齐.
5. Adjust the angle of the stage (up to 30° from horizontal):
5. 调整载物台的角度 （ 与水平方向最大成 30°）：
a. Slacken the screws in the side of the shield
一个。松开防护罩侧面的螺丝.
b. Angle the stage as required
b.根据需要调整载物台的角度.
c. Re tighten the screws before use
c. 使用前重新拧紧螺丝.
Figure 7-11. Rotacota stage
图 7-11.Rotacota 阶段
Tilting adjustment screw Cutout
倾斜调节螺钉 Cutout
Stage shaft
舞台轴
Rotation drive spigot M3 cap head screw
旋转驱动套管 M3 盖头螺钉
Q150T S/E/ES plus
7.7 Slide Stage
7.7 幻灯片台
To install the slide sample stage (10358):
要安装幻灯片样例台 （10358）：
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Open the top cover fully so it rests against its backstop
2. 完全打开顶盖，使其靠在逆止器上.
3. Remove any installed stage by lifting carefully upwards
3. 小心地向上提升，移除任何已安装的载物台.
滑动样品台高度调节系列载物台轴
Rotation drive spigot
旋转驱动龙头
Figure 7-12. Slide stage
图 7-12. 滑台
4. If necessary, adjust the stage height above the base plate
4. 如有必要，调整底板上方的载物台高度:
a. Slacken the M3 screw in the collar with a hexagonal key
一个。用六角键松开轴环中的 M3 螺钉.
b. Slide the collar to the desired position and retighten the M3 screw
b.将套环滑到所需位置并重新拧紧 M3 螺钉.
The recommended position for the collar is to achieve a 31.5mm distance between the underside of the collar and the underside of the stage. If you
衣领的推荐位置是在衣领下侧和载物台下侧之间实现 31.5 毫米的距离 。 如果你
require a greater distance between the stage and the target, the collar can be removed altogether with the underside of the stage therefore resting on the top of the drive spigot
需要平台和目标之间的更大距离，项圈可以完全移除，平台的底部因此位于驱动套管的顶部.
An alternative shaft is supplied with the stage (10214) to further increase the range of stage height adjustment available. To fit, hold the stage firmly and release the M5 nut. Unscrew the shaft, transfer the nut to the new shaft and fit to the stage so that the top is flush with the lower surface of the stage when the nut is tightened.
载物台 （10214） 提供了一个替代轴 ， 以进一步增加可用的载物台高度调节范围 为了适合 ， 请牢牢握住载物台并松开 M5 螺母。 拧下 shaft，将螺母转移到新轴上并安装到载物台上 ，以便在螺母 is 时， 顶部与载物台的下表面呈 flu h 形收紧。
5. Fit the slide stage
5. 安装载物台:
a. Locate its shaft in to the top of the stage rotation drive spigot protruding from the base plate.
一个。 将其轴定位到从底板伸出的载物台旋转驱动龙头的顶部 。
b. With a twisting motion, push gently down until the collar around the shaft rests on top of the drive spigot (seeFigure 7-12)
b.以扭转的动作轻轻向下推，直到轴周围的轴环靠在驱动套管的顶部（见图 7-12）.
Remove the collar if you need more distance between the stage and the target: the underside of the stage then rests on the top of the drive spigot.
如果你在载物台和目标之间需要更大的距离 ， 请取下项圈 ： 载物台的底部然后放在驱动龙头的顶部 。
To maximise the area or achieve more uniform coating on the slide stage, install the stage gearbox assembly (10359) - see page70.
为了在滑台上最大化面积或实现更均匀的涂层 ， 请安装载物台齿轮箱组件 （10359） - 参见第 70 页。
Q150T S/E/ES plus
7.8 102mm Stage and Gearbox
7.8 102mm 载物台和变速箱
The 102mm stage (10458) is designed to hold 102mm (4”) silicon wafers (see Figure 7-13). If you want to use a FTM with this stage, install the stage offset gearbox assembly (10359).
102mm 载物台 （10458） 设计用于容纳 102mm（4“） 硅片 （ 见图 7-13）。 如果您想将 FTM 与此平台一起使用 ， 请安装 stage 偏置变速箱组件 （10359）。
The sample stage gearbox allows you to install the sample stage in an offset rotating position. To install the 102mm stage and its gearbox
样品台齿轮箱允许您将样品台安装在偏置旋转位置。安装 102 毫米载物台及其变速箱:
1. Check the machine is not operating
1. 检查机器是否未运转.
2. Open the top cover fully so it rests against its backstop
2. 完全打开顶盖，使其靠在逆止器上.
3. Remove any installed stage by lifting carefully upwards
3. 小心地向上提升，移除任何已安装的载物台.
4. Remove the M3 socket cap screw securing the turbo mesh (this is the screw nearest to the stage rotation drive spigot).
4. 拆下固定涡轮网的 M3 内六角螺钉 （ 这是最靠近载物台旋转驱动龙头的螺钉 ）。
5. Fit the gearbox
5. 安装变速箱:
a. Locate its shaft into the top of the stage rotation drive spigot