Tokyo Electron Kyushu
Process Technology Dept| Tokyo Electron Kyushu |
| :---: |
| Process Technology Dept |
Furusho 古庄
Uemura 植村
Yoshihara 吉原
Kuwahara 桑原
Date Revised 修订日期
2020-11-172020-11-17
Date Issued Issuing Department Approval Check Creation
2006-09-29 "Tokyo Electron Kyushu
Process Technology Dept" Furusho Uemura Yoshihara Kuwahara
Date Revised
2020-11-17 | Date Issued | Issuing Department | Approval | Check | | Creation |
| :---: | :---: | :---: | :---: | :---: | :---: |
| 2006-09-29 | Tokyo Electron Kyushu <br> Process Technology Dept | Furusho | Uemura | Yoshihara | Kuwahara |
| Date Revised | | | | | |
| $2020-11-17$ | | | | | |
DO NOT DUPLICATE 不要重复
This manual applies to process set-up of resist coating in Clean Track ACT M COT. 本手册适用于在 Clean Track ACT M COT 中进行抗蚀涂层的工艺设置。
1.2 Overview 1.2 概述
This section describes the process overview of static coating method. In the mask process, absolute film thickness and film thickness uniformity should be adjusted at the same time. 本节介绍静态镀膜法的工艺概述。在掩膜工艺中，应同时调整绝对膜厚和膜厚均匀性。
Loop "Time
(sec)" "Speed
(rpm)" "Accel.
(rpm//s)" Dispense Arm I
1.0 1200 8000 Home| Loop | Time <br> $(\mathrm{sec})$ | Speed <br> $(\mathrm{rpm})$ | Accel. <br> $(\mathrm{rpm} / \mathrm{s})$ | Dispense | Arm I |
| :---: | :---: | :---: | :---: | :---: | :---: |
| | 1.0 | 1200 | 8000 | | Home |
Spin off the resist at the half speed of the previous step. 以上一步的半速脱模。
Spin off the resist at the half speed of the previous step for longer time. 用上一步骤的半速脱模，延长脱模时间。
*This step is effective to control the film thickness of the mask center. *此步骤可有效控制掩膜中心的薄膜厚度。
Dry the resist at the relatively low speed and form the film. 以相对较低的速度干燥抗蚀剂并形成薄膜。 ^(**){ }^{*} In ACT M COT, dry process is conducted at the low speed since wind marks may be generated when dry process is conducted at the high speed. ^(**){ }^{*} 在 ACT M COT 中，干燥过程以低速进行，因为干燥过程以高速进行时可能会产生风痕。
Spin off the back rinse dispensed in the previous step. Stop mask rotation and resist coating process is completed. 旋掉上一步分配的背面冲洗液。停止光罩旋转，抗蚀剂涂层工艺完成。 qquad\qquad
This section describes special terms used in this manual. 本节介绍本手册中使用的特殊术语。
No. 不
Term 学期
Description 说明
1
Optimization 优化
To optimize the parameters to meet a target thickness uniformity. 优化参数，以达到目标厚度均匀性。
Thickness uniformity of resist coated on the mask.
The film thickness on the mask is measured at multiple points on a mask, and its
uniformity is indicated as range (Max. - Min. values), sigma (standard
deviation) and 3sigma ( 3xx3 \times sigma) etc.
Thickness uniformity of resist coated on the mask.
The film thickness on the mask is measured at multiple points on a mask, and its
uniformity is indicated as range (Max. - Min. values), sigma (standard
deviation) and 3sigma ( 3xx sigma) etc.| Thickness uniformity of resist coated on the mask. |
| :--- |
| The film thickness on the mask is measured at multiple points on a mask, and its |
| uniformity is indicated as range (Max. - Min. values), sigma (standard |
| deviation) and 3sigma ( $3 \times$ sigma) etc. |
Comprehensive thickness uniformity (stability) when multiple masks are
processed.
Comprehensive thickness uniformity (stability) when multiple masks are
processed.| Comprehensive thickness uniformity (stability) when multiple masks are |
| :--- |
| processed. |
No. Term Description
1 Optimization To optimize the parameters to meet a target thickness uniformity.
2 "Thickness
uniformity" "Thickness uniformity of resist coated on the mask.
The film thickness on the mask is measured at multiple points on a mask, and its
uniformity is indicated as range (Max. - Min. values), sigma (standard
deviation) and 3sigma ( 3xx sigma) etc."
3 "Within-a-mask
Uniformity" Film thickness uniformity within a mask.
4 "Mask-to-mask
Uniformity" "Comprehensive thickness uniformity (stability) when multiple masks are
processed."| No. | Term | Description |
| :---: | :--- | :--- |
| 1 | Optimization | To optimize the parameters to meet a target thickness uniformity. |
| 2 | Thickness <br> uniformity | Thickness uniformity of resist coated on the mask. <br> The film thickness on the mask is measured at multiple points on a mask, and its <br> uniformity is indicated as range (Max. - Min. values), sigma (standard <br> deviation) and 3sigma ( $3 \times$ sigma) etc. |
| 3 | Within-a-mask <br> Uniformity | Film thickness uniformity within a mask. |
| 4 | Mask-to-mask <br> Uniformity | Comprehensive thickness uniformity (stability) when multiple masks are <br> processed. |
In this manual, the abbreviation of each process module is used. The table below lists the abbreviations. 本手册中使用各流程模块的缩写。下表列出了这些缩写。
No. 不
Abbreviation 缩写
Name 名称
Description 说明
1
UNC
Uni-cassette State 统一盒式磁带国家
A stage used as process start stage/end stage 用作流程开始阶段/结束阶段的阶段
2
TRS
Transition Stage 过渡阶段
模块在程序块、载波站块和接口块之间执行掩码传输。
A module performs mask transfer between proces
block, carrier station block, and interface block.
A module performs mask transfer between proces
block, carrier station block, and interface block.| A module performs mask transfer between proces |
| :--- |
| block, carrier station block, and interface block. |
3
MEC
Mask Excimer Cleaning 面罩准分子清洁
用于在面罩上照射紫外线以去除面罩上粘结/附着的有机物质的模块
A module used to irradiate UV rays on mask to remov
the organic substance bond/adhered on the mask
A module used to irradiate UV rays on mask to remov
the organic substance bond/adhered on the mask| A module used to irradiate UV rays on mask to remov |
| :--- |
| the organic substance bond/adhered on the mask |
4
SCR
Scrubber 洗涤器
用于在 MES 工艺后清洁掩模表面的模块，使用 Mega-sonic 和 DIW
A module used to clean the mask surface after MES
process, usine Mega-sonic and DIW
A module used to clean the mask surface after MES
process, usine Mega-sonic and DIW| A module used to clean the mask surface after MES |
| :--- |
| process, usine Mega-sonic and DIW |
5
ADH
Adhesion Process Station 粘合工艺站
A module performs Hydrophobing process A 模块执行水力发泡工艺
6
CPL
Chill Plate Process Station 冷却板处理站
A module performs heat processing to cool wafers 模块进行热处理，冷却晶片
7
COT
Coat Process Station 涂层处理站
A module performs resist coating process 模块执行抗蚀涂层工艺
8
MER
Mask Edge Bead Remover 面罩边珠去除剂
用于去除掩膜外围抗蚀层的模块。
A module used to remove resist on a peripheral of
mask.
A module used to remove resist on a peripheral of
mask.| A module used to remove resist on a peripheral of |
| :--- |
| mask. |
9
LHP
低温热板加工站
Low Temperature Hot Plate
Process Station
Low Temperature Hot Plate
Process Station| Low Temperature Hot Plate |
| :--- |
| Process Station |
A module performs heat processing (Max. =200 模块进行热处理（最大 =200
A module performs heat processing (Max. =200| A module performs heat processing (Max. =200 |
| :--- |
10
MCH
面膜冷却热板加工站
Mask Chilling Hot Plate
Process Station
Mask Chilling Hot Plate
Process Station| Mask Chilling Hot Plate |
| :--- |
| Process Station |
带冷却板的热板模块。主要用作 PAB 模块。
A hotplate module with chilling plate. It is mainly used
as PAB module.
A hotplate module with chilling plate. It is mainly used
as PAB module.| A hotplate module with chilling plate. It is mainly used |
| :--- |
| as PAB module. |
No. Abbreviation Name Description
1 UNC Uni-cassette State A stage used as process start stage/end stage
2 TRS Transition Stage "A module performs mask transfer between proces
block, carrier station block, and interface block."
3 MEC Mask Excimer Cleaning "A module used to irradiate UV rays on mask to remov
the organic substance bond/adhered on the mask"
4 SCR Scrubber "A module used to clean the mask surface after MES
process, usine Mega-sonic and DIW"
5 ADH Adhesion Process Station A module performs Hydrophobing process
6 CPL Chill Plate Process Station A module performs heat processing to cool wafers
7 COT Coat Process Station A module performs resist coating process
8 MER Mask Edge Bead Remover "A module used to remove resist on a peripheral of
mask."
9 LHP "Low Temperature Hot Plate
Process Station" "A module performs heat processing (Max. =200"
10 MCH "Mask Chilling Hot Plate
Process Station" "A hotplate module with chilling plate. It is mainly used
as PAB module."| No. | Abbreviation | Name | Description |
| :---: | :---: | :--- | :--- |
| 1 | UNC | Uni-cassette State | A stage used as process start stage/end stage |
| 2 | TRS | Transition Stage | A module performs mask transfer between proces <br> block, carrier station block, and interface block. |
| 3 | MEC | Mask Excimer Cleaning | A module used to irradiate UV rays on mask to remov <br> the organic substance bond/adhered on the mask |
| 4 | SCR | Scrubber | A module used to clean the mask surface after MES <br> process, usine Mega-sonic and DIW |
| 5 | ADH | Adhesion Process Station | A module performs Hydrophobing process |
| 6 | CPL | Chill Plate Process Station | A module performs heat processing to cool wafers |
| 7 | COT | Coat Process Station | A module performs resist coating process |
| 8 | MER | Mask Edge Bead Remover | A module used to remove resist on a peripheral of <br> mask. |
| 9 | LHP | Low Temperature Hot Plate <br> Process Station | A module performs heat processing (Max. =200 |
| 10 | MCH | Mask Chilling Hot Plate <br> Process Station | A hotplate module with chilling plate. It is mainly used <br> as PAB module. |
The following described the standard setting of the module. Some items may be specified by the customer. In that case, follow the customer’s instruction if any exist. 以下描述了模块的标准设置。某些项目可能由客户指定。在这种情况下，请遵循客户的指示（如果有的话）。
(1) COT Module (1) COT 模块
3 measurement points directly 40(mm)40(\mathrm{~mm}) under the filter of cup temp./hum. Controller *1)
(1) Directly above the chuck center
(2) (1)-100(mm)(1)-100(\mathrm{~mm})
(3) (1)+100(mm)(1)+100(\mathrm{~mm})
3 measurement points directly 40(mm) under the filter of cup temp./hum. Controller *1)
(1) Directly above the chuck center
(2) (1)-100(mm)
(3) (1)+100(mm)| 3 measurement points directly $40(\mathrm{~mm})$ under the filter of cup temp./hum. Controller *1) |
| :--- |
| (1) Directly above the chuck center |
| (2) $(1)-100(\mathrm{~mm})$ |
| (3) $(1)+100(\mathrm{~mm})$ |
*1) For the measurement method of cup wind velocity, refer to the set-up manual issued by Manufacturing Dept. Startup Section. *1)有关杯子风速的测量方法，请参阅制造部启动科发放的设置手册。
2. Standard Setting 2.标准设定
The resist dispense rate required differs depending on resist viscosity, resist type, and spin-off speed. With the static dispense method, the resist dispense volume doesn’t have much influence on film thickness uniformity. Please adjust the film thickness with 2.5ml//2.5 \mathrm{ml} / Mask, which is TEL-recommended volume. 根据光刻胶粘度、光刻胶类型和旋出速度的不同，所需的光刻胶点胶速度也不同。在静态点胶方法中，光刻胶点胶量对薄膜厚度的均匀性影响不大。请使用 2.5ml//2.5 \mathrm{ml} / Mask 调整薄膜厚度，这是 TEL 建议的量。
(1) COT-related Recipe -(1)- <Resist Dispense Rate =2.5ml//=\mathbf{2 . 5 m l} / Mask> (1) COT 相关配方-(1)- <阻力分配率 =2.5ml//=\mathbf{2 . 5 m l} / 掩码 >
The following describes the basic recipe for resist dispense rate =2.5ml//=2.5 \mathrm{ml} / Mask (TEL-recommended volume). For the pump recipe and COT recipe, refer to the basic recipe below. 下面描述了光阻剂分配率 =2.5ml//=2.5 \mathrm{ml} / Mask （TEL 建议容量）的基本配方。有关泵配方和 COT 配方，请参阅下面的基本配方。
Pumpl; Pumpl；
Make adjustment of the dispense rate so that displayed dispense time will be shorter than the target time (2.0sec) by about 20 msece . 调整分配率，使显示的分配时间比目标时间 （2.0 秒）短约 20 毫秒。
<RDS Pump>
Main data 主要数据
Dispense amount 分配数量
2.5 ml 2.5 毫升
Dispense time 分配时间
2.0 sec 2.0 秒
Dispense amount 2.5 ml
Dispense time 2.0 sec| Dispense amount | 2.5 ml |
| :--- | :--- |
| Dispense time | 2.0 sec |
Body data 身体数据
Trigger method 触发方法
Pump step 泵步骤
Dispense point 分配点
Dispense nozzle 分配喷嘴
Filtration rate 过滤率
0.50ml//sec0.50 \mathrm{ml} / \mathrm{sec}
AV open timing AV 打开定时
0.00 sec 0.00 秒
AV close timing AV 关闭时间
-0.05 sec -0.05秒
Suck back timing 吸回时间
0.00 sec 0.00 秒
Calibration 校准
1.00 ml 1.00 毫升
Purge volume 清洗量
1.00 ml 1.00 毫升
Purge rate 清洗率
0.50ml//sec0.50 \mathrm{ml} / \mathrm{sec}
Disp pressure permit 降压许可
0.50 MPa 0.50 兆帕
Wait pressure 等待压力
0.30 MPa 0.30 兆帕
Vent timing 排气定时
500disp//cnt500 \mathrm{disp} / \mathrm{cnt}
Vent time 通风时间
1.00 sec 1.00 秒
Pressure free time 无压力时间
1.00 sec 1.00 秒
Feed pump reload time 进料泵再装料时间
5.00 sec 5.00 秒
Trigger method Pump step
Dispense point Dispense nozzle
Filtration rate 0.50ml//sec
AV open timing 0.00 sec
AV close timing -0.05 sec
Suck back timing 0.00 sec
Calibration 1.00 ml
Purge volume 1.00 ml
Purge rate 0.50ml//sec
Disp pressure permit 0.50 MPa
Wait pressure 0.30 MPa
Vent timing 500disp//cnt
Vent time 1.00 sec
Pressure free time 1.00 sec
Feed pump reload time 5.00 sec| Trigger method | Pump step |
| :--- | :---: |
| Dispense point | Dispense nozzle |
| Filtration rate | $0.50 \mathrm{ml} / \mathrm{sec}$ |
| AV open timing | 0.00 sec |
| AV close timing | -0.05 sec |
| Suck back timing | 0.00 sec |
| Calibration | 1.00 ml |
| Purge volume | 1.00 ml |
| Purge rate | $0.50 \mathrm{ml} / \mathrm{sec}$ |
| Disp pressure permit | 0.50 MPa |
| Wait pressure | 0.30 MPa |
| Vent timing | $500 \mathrm{disp} / \mathrm{cnt}$ |
| Vent time | 1.00 sec |
| Pressure free time | 1.00 sec |
| Feed pump reload time | 5.00 sec |
Pump23; 泵 23；
Since the value above is set to the A//V\mathrm{A} / \mathrm{V} close timing (to ensure liquid cutoff margin), it is OK that the dispe time is equal to the target time. The feed pump reload time differs depending on the resist viscosity. 由于上述值设置为 A//V\mathrm{A} / \mathrm{V} 关闭定时（以确保液体切断余量），因此 Dispe 时间等于目标时间也没有问题。进料泵重新加载时间因阻蚀剂粘度而异。
(2) COT Recipe (2) COT 配方
The following describes the recipe when the film thickness 3000"Å"3000 \AA is targeted for FEP171 resist. 下面描述的是针对 FEP171 阻焊剂的薄膜厚度 3000"Å"3000 \AA 时的配方。
The recipe varies depending on the resist type and target film thickness. However, please refer to the recipe below ; a recipe basic, and adjust the film thickness by changing each step, cup exhaust, and the ring offset. 配方因光刻胶类型和目标膜厚而异。不过，请参考下面的配方；基本配方，并通过改变每个步骤、杯排气量和环偏移量来调整薄膜厚度。
Step Loop "Time
(sec)" Dispense Arml Arm2
1 2 Resist Home 150mm//s NW Home 150mm//s NW
2 5 Home 150mm//s NW Home 150mm//s NW
3 5 Solvent Bath Home 150mm//s NW Home 150mm//s NW| Step | Loop | Time <br> $(\mathrm{sec})$ | Dispense | Arml | Arm2 |
| :---: | :---: | :---: | :---: | :---: | :---: |
| 1 | | 2 | Resist | Home $150 \mathrm{~mm} / \mathrm{s}$ NW | Home $150 \mathrm{~mm} / \mathrm{s}$ NW |
| 2 | | 5 | | Home $150 \mathrm{~mm} / \mathrm{s}$ NW | Home $150 \mathrm{~mm} / \mathrm{s}$ NW |
| 3 | | 5 | Solvent Bath | Home $150 \mathrm{~mm} / \mathrm{s}$ NW | Home $150 \mathrm{~mm} / \mathrm{s}$ NW |
A dummy seq. recipe is created per dispense line. 每个分配行创建一个虚拟序列配方。
-Resist: The actual dispense is conducted by following the pump recipe set in this step. -抵制：按照在此步骤中设置的泵配方进行实际分配。
Make settings of the pump recipe as well as COT recipe. 设置泵配方和 COT 配方。
In this dummy dispense step, it is favorable that the dispense condition or the dispense speed is equal to tt actual dispense. 在这个虚拟分配步骤中，分配条件或分配速度等于 tt 实际分配是有利的。
-Solvent-Bath: Set the dispense time (“Time” in the table) to 5.0 sec (or more). -溶剂槽：将分配时间（表中的 "时间"）设为 5.0 秒（或更长）。
2) Dummy condition recipe 2) 虚拟条件配方
No 没有
Control Item 控制项目
Mask cnt 掩码 cnt
Interval Sec 间隔 秒
{:[" Lot "],[" Spec "]:}\begin{gathered} \text { Lot } \\ \text { Spec } \end{gathered}
Cond 空调
Timing 时间安排
Exection Format 检查格式
1
Resist 1 : 阻力 1 ：
3600 ::
Unspecified 未说明
or 或
Pre recv 预回收
Recipe used (Select the appropriate recipe from the above-described Dummy seq. recipe) 使用的配方（从上述虚拟序列配方中选择合适的配方）
n-1
Solvent Bath 溶剂槽
0
3600
Unspecified 未说明
or 或
Pre recv 预回收
n
Recipe Spec Resist 配方规格
0
0
Specified 指定
or 或
Pre recv 预回收
ecipe unu
Count 计数
Interval 间隔
Time 时间
1
1
1
No Control Item Mask cnt Interval Sec " Lot
Spec " Cond Timing Exection Format
1 Resist 1 : 3600 : Unspecified or Pre recv Recipe used (Select the appropriate recipe from the above-described Dummy seq. recipe)
n-1 Solvent Bath 0 3600 Unspecified or Pre recv
n Recipe Spec Resist 0 0 Specified or Pre recv ecipe unu
Count Interval Time
1 1 1| No | Control Item | Mask cnt | Interval Sec | $\begin{gathered} \text { Lot } \\ \text { Spec } \end{gathered}$ | Cond | Timing | Exection Format | | |
| :---: | :---: | :---: | :---: | :---: | :---: | :---: | :---: | :---: | :---: |
| 1 | Resist 1 : | | 3600 $:$ | Unspecified | or | Pre recv | Recipe used (Select the appropriate recipe from the above-described Dummy seq. recipe) | | |
| n-1 | Solvent Bath | 0 | 3600 | Unspecified | or | Pre recv | | | |
| n | Recipe Spec Resist | 0 | 0 | Specified | or | Pre recv | | ecipe unu | |
| | | | | | | | Count | Interval | Time |
| | | | | | | | 1 | 1 | 1 |
Please set the condition of “Recipe Spec Resist” as much as possible. 请尽量设置 "配方规格抗性 "条件。
To conduct drain case cleaning, manually clean the drain case for about 20 sec before the equipment shuts dow a while. 要进行排水口清洁，请在设备暂时关闭之前手动清洁排水口约 20 秒。
(2) CWD Recipe (2) CWD 配方
The following describes COT cup cleaning recipe. 下面介绍 COT 杯的清洁配方。
The degree of cup contamination differs depending on No. of masks processed, dispense volume, and process time. Please determine the recipe after the customer conducts processing at the timing when CWD is used. 杯子的污染程度因处理的面膜数量、分配量和处理时间而异。请客户在使用 CWD 的时间进行加工后再确定配方。
TEL recommends conducting the cleaning once/1 day. TEL 建议每天进行一次清洁。
Standard cup 标准杯
Step 步骤
Loop 循环
Time (sec) 时间（秒）
转速（转/分）
Speed
(rpm)
Speed
(rpm)| Speed |
| :--- |
| (rpm) |
Accel (rpm/s) 加速度（转/分/秒）
Dispense 分配
Arm-2 臂-2
[" Cup EXH "],[(Pa)]\begin{gathered}
\text { Cup EXH } \\
(\mathrm{Pa}) \\
\hline
\end{gathered}
The following described the chuck cleaning recipe. 下面介绍的是卡盘清洁配方。
The contamination level of the chuck largely differs depending on No. of mask processed, dispense volume, and process time. Check the actual contamination status with the customer’s coating condition and determine the recipe. 卡盘的污染程度在很大程度上取决于处理的掩膜数量、分配量和处理时间。根据客户的涂层状况检查实际污染状况，并确定配方。
TEL recommends conducting the cleaning once/5 masks. TEL 建议清洗一次/5 个口罩。
Standard Chuck 标准卡盘
Step 步骤
Loop 循环
Time (sec) 时间（秒）
转速（转/分）
Speed
(rpm)
Speed
(rpm)| Speed |
| :--- |
| (rpm) |
Accel (rpm/s) 加速度（转/分/秒）
Dispense 分配
Arm-2 臂-2
[" Cup EXH "],[(Pa)]\begin{gathered}
\text { Cup EXH } \\
(\mathrm{Pa}) \\
\hline
\end{gathered}
The picture below shows the nozzle position in the chuck cleaning recipe. 下图显示了卡盘清洁配方中的喷嘴位置。
*Chuck top view * 查克俯视图
*Chuck side view * 查克侧视图
Chuck cleaning recipe movement 卡盘清洁配方动作
(1) The blue line P1 cleans the lateral side holding pin and chuck wing. (Nozzle2) (1) 蓝色线 P1 清洁侧面固定销和卡盘翼。(喷嘴2）
(2) The yellow line P2 cleans the rest of the chuck wing. The cleaning area is about (P1) +10 mm . (Nozzle2) (2) 黄线 P2 清洁卡盘翼的其余部分。清洁区域约为（P1）+10 毫米。
(3) The orange line P3 cleans the backside holding pin and the chuck base. The cleaning area is about (P2) +25 mm . (Nozzle 2 ) (3) 橙色线 P3 清洁背面固定销和卡盘底座。清洁区域约为 (P2) +25 mm。
(4) The entire chuck base is cleaned by the Nozzlel from the center position. (Nozzle 1) (4) 喷嘴从中心位置清洁整个卡盘底座。(喷嘴 1）
*To make the dispense position adjustment of Nozzle2, pay attention to thinner splash. *调整喷嘴 2 的分配位置时，请注意较稀薄的飞溅物。
*Pay attention not to get the thinner in the back rinse hole of the chuck during position adjustment of Nozzle2 to P3. *在调整喷嘴 2 至 P3 的位置时，注意不要让稀释剂进入卡盘的后冲洗孔。
2. Standard Setting 2.标准设定
2.2 Basic Recipe 2.2 基本配方
(4) Other (4) 其他
1. System Recipe 1.系统配方
Basically follow the instruction given by the customer. Refer to the recipe below unless any instruction is given. In the standard setting, resist temperature == cup temperature. (The table below show the case when the cup temperature =23.0^(@)C=23.0^{\circ} \mathrm{C}.) 基本上按照客户的指示进行。除非有任何指示，否则请参考下面的配方。在标准设置中，电阻温度 == 杯温。(下表显示了杯温 =23.0^(@)C=23.0^{\circ} \mathrm{C} 时的情况）。
Basically follow the instruction given by the customer. Refer to the recipe below unless any instruction is given. The block/module No. and recipe name are arbitrary, and not specified here. 基本上按照客户的指示进行。除非有任何指示，否则请参考下面的配方。区块/模块编号和配方名称是任意的，此处未作说明。
Note) Be sure to add the setting of EXP in CPL before COT. 注）请务必将 CPL 中的 EXP 设置添加到 COT 之前。
2.2 Basic Recipe 2.2 基本配方
(3) LHP Module (3) LHP 模块
This is used for the purpose of dehydration. The condition differs depending on chemicals. Please follow instruction given by the customer. The following shows an example. 用于脱水。根据化学品的不同，情况也不同。请按照客户提供的说明进行操作。下面是一个示例。
Step 步骤
Loop 循环
Pin Position 针脚位置
Shutter Condition 快门状态
Time (sec) 时间（秒）
1
Down 下降
Closed 关闭
600.0
Step Loop Pin Position Shutter Condition Time (sec)
1 Down Closed 600.0| Step | Loop | Pin Position | Shutter Condition | Time (sec) |
| :---: | :---: | :---: | :---: | :---: |
| 1 | | Down | Closed | 600.0 |
External Control Data darr\downarrow 外部控制数据 darr\downarrow
The condition of pre-bake differs depending on the used chemical. Generally, the condition recommended by the chemical manufacturer is set. Please follow the instruction given by the customer. The following shows an example. 预烘烤的条件因所使用的化学品而异。一般来说，化学品生产商建议的条件是既定的。请遵循客户的指示。以下是一个示例。
Step 步骤
Loop 循环
Process 过程
Condition 条件
Time (sec) 时间（秒）
1
Heating process 加热过程
Pin down, shutter closed 针脚向下，快门关闭
600.0
2
Chilling process 冷却过程
Cool cover down 降温罩
600.0
Step Loop Process Condition Time (sec)
1 Heating process Pin down, shutter closed 600.0
2 Chilling process Cool cover down 600.0| Step | Loop | Process | Condition | Time (sec) |
| :---: | :---: | :---: | :---: | :---: |
| 1 | | Heating process | Pin down, shutter closed | 600.0 |
| 2 | | Chilling process | Cool cover down | 600.0 |
External Control Data darr\downarrow 外部控制数据 darr\downarrow
Regarding MEC, SCR, ADH and MER, please refer to each set up manual. 关于 MEC、SCR、ADH 和 MER，请参阅各设置手册。
3.1 Procedure 3.1 程序
TOKYO ELECTRON LIMITED 东京电子有限公司
Follow the procedure below to optimize parameters for thickness. 按照以下步骤优化厚度参数。
(1) Check hardware settings Check the hardware settings listed in Section 2.1. (1) 检查硬件设置 检查第 2.1 节中列出的硬件设置。
(2) Create basic recipe Create the Basic recipe as described in Section 2.2. (2) 创建基本配方 按照第 2.2 节所述创建基本配方。
Coater-related recipes (pump recipe, coater recipe) differ depending on the resist dispense amount. 与涂布机相关的配方（泵配方、涂布机配方）因光阻分配量的不同而不同。
See Section 2.2 to make suitable settings. 请参阅第 2.2 节进行适当设置。
(3) Coating preparation (3) 涂层制备
Follow Section 3.2 to prepare for coating process as below. 按照第 3.2 节的要求准备以下涂层工艺。
(1) Nozzle position adjustment (1) 喷嘴位置调整
(2) Resist dispense condition adjustment (2) 阻力分配条件调整
(3) Resist dispense volume adjustment (3) 抗蚀剂分注量调节
(4) Parameter setting (4) 参数设置
Follow the steps below to adjust the mask thickness, as described in Section 3.3. 按照第 3.3 节所述，按照以下步骤调整掩膜厚度。
(1) Adjustment of absolute film thickness and film thickness profile (1) 调整绝对薄膜厚度和薄膜厚度曲线
Adjustment of step time for each recipe, spin speed, and acceleration 调整每个配方的步进时间、旋转速度和加速度
Adjustment of ring height 调节环高度
Adjustment of cup exhaust 调整杯子排气
(2) Final adjustment (2) 最后调整
(5) Continuous Processing Perform continuous processing of multiple masks according to the customer’s instructions. (5) 连续加工 根据客户的指示对多个掩膜进行连续加工。
(6) End Parameter setting is finished. (6) 结束 参数设置完成。
If satisfactory results are not obtained, refer to Section 4.Troubleshooting to make further adjustment of thickness uniformity. 如果没有得到满意的结果，请参阅第 4.故障排除部分，进一步调整厚度均匀性。
(1) Perform dummy dispense several times with the basic recipe (pump recipe) previously created, and measure the dispense volume. (1) 使用之前创建的基本配方（泵配方）进行多次模拟分配，并测量分配体积。
e.g.) Make adjustment so that 10 times of dispense of 0.5 ml will be 5.0 ml . (for reduction of adjustment error) However, certain intervals are required between dispenses when high-viscosity resist is used. (to eliminate the variation of pump inner pressure.) 例如）进行调整，使 0.5 毫升的分配 10 次为 5.0 毫升。(减少调节误差）但是，在使用高粘度抗蚀剂时，分配之间需要一定的间隔。(以消除泵内压力的变化）。
See the below for setting time in this step. 有关此步骤的时间设置，请参阅下文。
Resist viscosity Waiting time 抗粘度 等待时间
To 20cp :Osec 至 20cp :Osec
20 to 40cp : 10 sec 20 至 40cp ：10 秒
40 to 100cpquad:15sec100 \mathrm{cp} \quad: 15 \mathrm{sec} 40 至 100cpquad:15sec100 \mathrm{cp} \quad: 15 \mathrm{sec}
(2) Use the formula below to calculate the calibration value (correction value) from the dispense volume actually measured. (2) 使用以下公式根据实际测量的分配体积计算校准值（修正值）。
Calibration value == Set dispense volume ( 1.0 ml in basic recipe) /// Measured dispense volume 校准值 == 设置分配体积（基本配方中为 1.0 毫升） /// 测量分配体积
(3) Enter the value calculated in (2) to “Calibration” in “Dispense configuration” under “System” in “Main menu”. (Leave the Pump recipe “Calibration” setting at 1.00.) (3) 将 (2) 中计算的值输入到 "主菜单 "中 "系统 "下 "分配配置 "的 "校准 "中 （将泵配方 "校准 "设置设为 1.00）。
=> In general, if correction is done in “Dispense configuration,” “calibration” value in the pump recipe can remain 1.00 . => 一般情况下，如果在 "分配配置 "中进行校正，泵配方中的 "校正 "值可以保持为 1.00。
By making this setting, a pump recipe can be transferred to other pumps with different calibration values. 通过此设置，可将泵配方转移到具有不同校准值的其他泵上。
Only in the case that all of the actual dispense conditions can’t be covered by a single calibration value (due to special piping lengths, chemical etc.), set the secondary calibration using the “Calibration” value in the pump recipe. 只有在单个校准值无法涵盖所有实际分配条件的情况下（由于特殊的管道长度、化学品等），才可使用泵配方中的 "校准 "值设置二级校准。
(4) After setting the calibration value, check the dispense volume again, and change the calibration value if necessary. (Repeat the setting until the set value and actual dispense volume become equal.) (4) 设置校准值后，再次检查分配体积，必要时更改校准值。(重复设置，直至设定值与实际分配体积相等）。
3. Parameters Setting
3.3 Optimization of Film Thickness
TOKYO ELECTRON LIMITED
The coating recipe for ACT M COT is complicated since the mask shape is square, which is different from the 3.参数设置 3.3 薄膜厚度的优化 东京电子有限公司 ACT M COT 的镀膜配方比较复杂，因为掩膜形状是方形的，与 ACT M COT 不同。
wafer. 晶片。
The following describes how the film thickness varies when each parameter in the basic coating recipe is changed. Please refer to the following to optimize the film thickness. 下面描述了改变基本涂层配方中的每个参数时膜厚的变化情况。请参考以下内容优化膜厚。
Basic coating recipe: Resist FEP171, target film thickness 3000"Å"3000 \AA 基本涂层配方：抗蚀剂 FEP171，目标膜厚 3000"Å"3000 \AA
(1) Description of Film Thickness Map (1) 薄膜厚度图说明
The mask film thickness graphs are shown in 3-D images from the next page. The measurement area and points are as described below. There are 2 patterns of the graphs; measurement area ◻132mm\square 132 \mathrm{~mm} and ◻140mm\square 140 \mathrm{~mm}. The measurement area differs depending on the customer. Please refer to the suitable example. 下一页的三维图像显示了掩膜厚度图。测量区域和点如下所述。图形有两种模式：测量区域 ◻132mm\square 132 \mathrm{~mm} 和 ◻140mm\square 140 \mathrm{~mm} 。测量区域因客户而异。请参考合适的示例。
Fig. Film thickness measurement position 图 薄膜厚度测量位置
(Left ◻132mm\square 132 \mathrm{~mm} with 11 xx11=12111 \times 11=121 points, Right ◻140mm\square 140 \mathrm{~mm} with 11 xx11=12111 \times 11=121 points) (左 ◻132mm\square 132 \mathrm{~mm} 为 11 xx11=12111 \times 11=121 点，右 ◻140mm\square 140 \mathrm{~mm} 为 11 xx11=12111 \times 11=121 点）
3. Parameters Setting 3.参数设置
3.3 Optimization of Film Thickness 3.3 优化薄膜厚度
(1) Parameter Dependency (1) 参数依赖性
TOKYO ELECTRON LIMITED 东京电子有限公司
Step3 Time (0sec-8sec) 步骤 3 时间（0 秒-8 秒）
Step 步骤
Loop 循环
Time (sec) 时间（秒）
转速（转/分）
Speed
(rpm)
Speed
(rpm)| Speed |
| :--- |
| (rpm) |
Aceel (rpm//s)(\mathrm{rpm} / \mathrm{s})
Dispense 分配
[" Cap EXH "],[(Pa)]\begin{gathered} \text { Cap EXH } \\ (\mathrm{Pa}) \\ \hline \end{gathered}
Extending the time for Step3 affects the peripheral film thickness. However, when the time for Step 3 is extended too long, it can cause some negative effects, such as coating unevenness. Please set the time to 4 sec or less. 延长步骤 3 的时间会影响外围薄膜的厚度。但是，如果步骤 3 的时间过长，可能会造成一些负面影响，例如涂层不均匀。请将时间设置为 4 秒或更短。
The time of Step4 is an important parameter that has a great impact on the film thickness uniformity and absoluter thickness. The main purpose of Step4 is to make the film thickness close to the target required by the customer,Although the film thickness uniformity and the absolute film thickness are significantly influenced when the value is largely changed, the absolute film thickness can be changed with maintaining the uniformity by slightly changing: this parameter. For example, to reduce the thickness by about 200"Å"200 \AA with maintaining the uniformity under the completed condition, change this parameter to create a new condition. 步骤 4 的时间是一个重要参数，对膜厚均匀性和绝对膜厚有很大影响。步骤 4 的主要目的是使薄膜厚度接近客户要求的目标值，虽然在很大程度上改变该值会对膜厚均匀性和绝对膜厚产生很大影响，但只要稍微改变该参数，就可以在保持均匀性的情况下改变绝对膜厚。例如，要在完成条件下保持均匀性的情况下将厚度减少约 200"Å"200 \AA ，请更改该参数以创建新条件。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
*The pitch of the map above; 20"Å"20 \AA for ◻132mm\square 132 \mathrm{~mm}, and 40"Å"40 \AA for ◻140mm\square 140 \mathrm{~mm} * 上图的间距； 20"Å"20 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 40"Å"40 \AA 表示 ◻140mm\square 140 \mathrm{~mm} 。
The spin speed of Step4 is also an important parameter that has a great impact on the film thickness uniformity and absolute thickness as well as the time described in the previous section. 步骤 4 的旋转速度也是一个重要参数，它对薄膜厚度的均匀性和绝对厚度以及上一节所述的时间都有很大影响。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
*The pitch of the map above; 30"Å"30 \AA for ◻132mm\square 132 \mathrm{~mm}, and 70"Å"70 \AA for ◻140mm\square 140 \mathrm{~mm} * 上图的间距； 30"Å"30 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 70"Å"70 \AA 表示 ◻140mm\square 140 \mathrm{~mm} 。
3. Parameters Setting 3.参数设置
The spin speed of Step4 is also an important parameter that has a great impact on the film thickness uniformity and absolute thickness as well as the time described in the previous section. 步骤 4 的旋转速度也是一个重要参数，它对薄膜厚度的均匀性和绝对厚度以及上一节所述的时间都有很大影响。
Example of thickness control darr\downarrow 厚度控制示例 darr\downarrow
*The pitch of the map above; 30"Å"30 \AA for ◻132mm\square 132 \mathrm{~mm}, and 70"Å"70 \AA for ◻140mm\square 140 \mathrm{~mm} * 上图的间距； 30"Å"30 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 70"Å"70 \AA 表示 ◻140mm\square 140 \mathrm{~mm} 。
3.3 Optimization of Film Thickness 3.3 优化薄膜厚度
(4) Step4 Acceleration ( 4000rpm//s-8000rpm//s4000 \mathrm{rpm} / \mathrm{s}-8000 \mathrm{rpm} / \mathrm{s} ) (4) 步骤 4 加速 ( 4000rpm//s-8000rpm//s4000 \mathrm{rpm} / \mathrm{s}-8000 \mathrm{rpm} / \mathrm{s} )
The accelcration of Step4 is a parameter that enables the absolute thickness to be changed with maintaining the filim thickness uniformity in ◻132mm\square 132 \mathrm{~mm} area. However, in ◻140mm\square 140 \mathrm{~mm} area, the thickness of the corners is changed by thi parameter; thus, the thickness uniformity is influenced. 步骤 4 的加速度是一个参数，它可以在 ◻132mm\square 132 \mathrm{~mm} 区域内改变绝对厚度，同时保持薄膜厚度的均匀性。但是，在 ◻140mm\square 140 \mathrm{~mm} 区域，角的厚度会因这个参数而改变，因此厚度均匀性会受到影响。
Changing this parameter is effective to adjust the thickness when the absolute thickness is slightly different from th target thickness even though the thickness uniformity is satisfied. 当绝对厚度与目标厚度略有不同时，即使满足厚度均匀性，更改该参数也能有效调整厚度。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
3. Parameters Setting 3.参数设置
3.3 Optimization of Film Thickness 3.3 优化薄膜厚度
(5) Step5 Time ( 0.4sec-1.6sec0.4 \mathrm{sec}-1.6 \mathrm{sec} ) (5) Step5 时间 ( 0.4sec-1.6sec0.4 \mathrm{sec}-1.6 \mathrm{sec} )
TOKYO ELECTRON LIMITED 东京电子有限公司
The time of Step5 is a parameter that has an impact on the film thickness uniformity and absolute thickness even though not as much as the time of Step4. The time of Step5 can add concavity and convexity to the thickness uniformity. When the film thickness profile becomes convex during optimizing thickness, increase the value of the parameter to make adjustment. 步骤 5 的时间是一个对薄膜厚度均匀性和绝对厚度有影响的参数，但影响程度不如步骤 4 的时间。步骤 5 的时间可以增加厚度均匀性的凹度和凸度。在优化厚度过程中，当薄膜厚度轮廓变凸时，可增加参数值进行调整。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
*The pitch of the map above; 10"Å"10 \AA for ◻132mm\square 132 \mathrm{~mm}, and 15"Å"15 \AA for 140 mm *上图的间距； 10"Å"10 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 15"Å"15 \AA 表示 140 毫米
3.3 Optimization of Film Thickness 3.3 优化薄膜厚度
(6) Step5 Spin Speed ( 500rpm-2500rpm\mathbf{5 0 0} \mathrm{rpm}-2500 \mathrm{rpm} ) (6) Step5 旋转速度 ( 500rpm-2500rpm\mathbf{5 0 0} \mathrm{rpm}-2500 \mathrm{rpm} )
Step 步骤
Loop 循环
{:[" Time "],[" (sec) "]:}\begin{aligned} & \text { Time } \\ & \text { (sec) } \end{aligned}
Resist volume quad:2.5cc//2.0sec\quad: 2.5 \mathrm{cc} / 2.0 \mathrm{sec} 阻力体积 quad:2.5cc//2.0sec\quad: 2.5 \mathrm{cc} / 2.0 \mathrm{sec}
Resist temperature : 21\mathbf{2 1} deg CC CUP temperature : 21 deg C CUP humidity :45%: \mathbf{4 5 \%} CPL (before COT) :21deg C 电阻温度： 21\mathbf{2 1} 摄氏度 CC 银联温度：摄氏 21 度 银联湿度 :45%: \mathbf{4 5 \%} CPL（COT 前）：摄氏 21 度
The spin speed of Step5 is also an important parameter that has a great impact on the film thickness uniform the absolute thickness as well as the time of Step5 described in the previous section. 步骤 5 的旋转速度也是一个重要参数，它对薄膜厚度的均匀性、绝对厚度以及步骤 5 的时间都有很大影响。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
FEP171_3000A Step5-V FEP171_3000A 步进 5-V
132 mm square 11 xx1111 \times 11 132 毫米见方 11 xx1111 \times 11
Resist volume :2.5cc//2.0sec
Resist temperature :21degC
CUP temperature :21degC
CUP humidity :45%
CPL (before COT) :21degC| Resist volume | $: 2.5 \mathrm{cc} / 2.0 \mathrm{sec}$ |
| :--- | :--- |
| Resist temperature | $: 21 \mathrm{deg} \mathrm{C}$ |
| CUP temperature | $: 21 \mathrm{deg} \mathrm{C}$ |
| CUP humidity | $: 45 \%$ |
| CPL (before COT) | $: 21 \mathrm{deg} \mathrm{C}$ |
The acceleration of Step5 is a parameter that enables the absolute thickness to be changed with maintaining the film thickness uniformity in ◻132mm\square 132 \mathrm{~mm} area. However, in ◻140mm\square 140 \mathrm{~mm} area, the thickness of the corners is changed by this parameter; thus, the thickness uniformity is influenced. The effect is similar to the acceleration of Step4, but the relation between the acceleration and the absolute thickness is opposite from the Step 4. (When the acceleration of Step 5 increases, the absolute thickness also increases.) 步骤 5 的加速度是一个参数，可在 ◻132mm\square 132 \mathrm{~mm} 区域保持薄膜厚度均匀性的情况下改变绝对厚度。但是，在 ◻140mm\square 140 \mathrm{~mm} 区域，边角的厚度会因这个参数而改变，因此厚度均匀性会受到影响。其效果与步骤 4 的加速度类似，但加速度与绝对厚度之间的关系与步骤 4 相反（当步骤 5 的加速度增加时，绝对厚度也会增加）。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
The time of Step6 is one of the effective parameters. It can add concavity and convexity to the thickness profile as well as the time of Step5. However, unlike the time of Step5, it doesn’t change the absolute thickness. This parameter is effective to control the center thickness. 步骤 6 的时间是有效参数之一。与步骤 5 的时间一样，它可以增加厚度轮廓的凹度和凸度。但是，与步骤 5 的时间不同，它不会改变绝对厚度。该参数可有效控制中心厚度。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
*The pitch of the map above; 10"Å"10 \AA for ◻132mm\square 132 \mathrm{~mm}, and 20"Å"20 \AA for ◻140mm\square 140 \mathrm{~mm} * 上图的间距； 10"Å"10 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 20"Å"20 \AA 表示 ◻140mm\square 140 \mathrm{~mm} 。
The spin speed of Step 6 has greater impact on the absolute film thickness than the time of Step 6 does depending on the change range. To adjust the center thickness, it is easier to change the time than the acceleration of Step6. 根据变化范围，步骤 6 的旋转速度比步骤 6 的时间对绝对薄膜厚度的影响更大。要调整中心厚度，改变时间比改变步骤 6 的加速度更容易。
Example of thickness control darr\downarrow 厚度控制示例 darr\downarrow
FEP171_3000A Step6-T
132 mm square 11 xx1111 \times 11 132 毫米见方 11 xx1111 \times 11
The acceleration of Step6 is different from the time and spin speed in that it only adds concavity to the film thickness profile. The absolute thickness can be slightly changed by making a small change in the acceleration. However, since the same effect can be obtained by other step, it’s not really necessary to change this parameter. 步骤 6 的加速度与时间和旋转速度不同，它只增加薄膜厚度曲线的凹度。只要稍微改变加速度，就可以稍微改变绝对厚度。不过，由于其他步骤也能获得同样的效果，因此没有必要改变这一参数。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
FEP171_3000A Step6-A 132 mm square 11 xx1111 \times 11 FEP171_3000A Step6-A 132 毫米见方 11 xx1111 \times 11
Step7 is a step for dry. When a mask is dried at the high spin speed, the film thickness uniformity is influenced (e.g. the thickness on the corners becomes thicker, or the thickness on the center becomes thinner). In principle, the resist film is dried at relatively low spin speed that doesn’t influence the film thickness for long time. 步骤 7 是干燥步骤。在高速旋转下干燥光刻胶时，膜厚的均匀性会受到影响（如边角的膜厚变厚或中心的膜厚变薄）。原则上，以相对较低的旋转速度干燥光刻胶膜不会长时间影响膜厚。
Step7 time hardly influences the film thickness uniformity and the absolute thickness. To determine the time, first, set the time longer and perform the actual coating process. Check the time required for the resist film to get dried. The guideline of the setting time is the time required +10 sec . It would be about 60 sec . (The color of the resist film gradually changes while it is dried. When the change stops, it means the resist film is dried completely.) 步骤 7 时间对膜厚均匀性和绝对厚度几乎没有影响。要确定时间，首先要设定较长的时间，然后执行实际的涂布过程。检查抗蚀剂薄膜干燥所需的时间。设定时间的准则是所需时间 +10 秒。大约为 60 秒。(抗蚀剂薄膜在干燥过程中颜色会逐渐变化。当变化停止时，表示抗蚀膜已完全干燥）。
xample of thickness control darr\downarrow 厚度控制示例 darr\downarrow
*The pitch of the map above; 10"Å"10 \AA for ◻132mm\square 132 \mathrm{~mm}, and 20"Å"20 \AA for ◻140mm\square 140 \mathrm{~mm} * 上图的间距； 10"Å"10 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 20"Å"20 \AA 表示 ◻140mm\square 140 \mathrm{~mm} 。
(11) Step7 Spin Speed ( 50rpm-250rpm50 \mathrm{rpm}-250 \mathrm{rpm} ) (11) Step7 旋转速度 ( 50rpm-250rpm50 \mathrm{rpm}-250 \mathrm{rpm} )
Step 步骤
Loup 卢普
{:[" Time "],[" (sec) "]:}\begin{aligned} & \text { Time } \\ & \text { (sec) } \end{aligned}
The spin speed of Step7 controls the film thickness of the mask center. As described in the previous section, Step7 is a drying step. It is recommended that the parameters of the Step7 are fixed and not used as a parameter for thickness optimization, and the film thickness is optimized by other parameters (Step4-6). 步骤 7 的旋转速度控制着掩膜中心的薄膜厚度。如上一节所述，步骤 7 是一个干燥步骤。建议固定步骤 7 的参数，不将其作为厚度优化参数，而通过其他参数（步骤 4-6）优化薄膜厚度。
*Examole of thickness control darr\downarrow darr\downarrow 厚度控制剂
Resist volumo :2.6ce//2.0sec
Resist temperature :21dogC
CUP temperature :21degC
CUP humidity :45%
CPL (before COT) :21degC| Resist volumo | $: 2.6 \mathrm{ce} / 2.0 \mathrm{sec}$ |
| :--- | :--- |
| Resist temperature | $: 21 \mathrm{dog} \mathrm{C}$ |
| CUP temperature | $: 21 \mathrm{deg} \mathrm{C}$ |
| CUP humidity | $: 45 \%$ |
| CPL (before COT) | $: 21 \mathrm{deg} \mathrm{C}$ |
As the acceleration of Step7 decreases, the film thickness of the mask center gets influenced. As described in the previous section, Step 7 is a drying step. It is recommended that the parameters of the Step7 are fixed and not used as a parameter for thickness optimization, and the film thickness is optimized by other parameters (Step4-6). 随着步骤 7 的加速度减小，掩膜中心的薄膜厚度也会受到影响。如上一节所述，步骤 7 是一个干燥步骤。建议固定步骤 7 的参数，不将其作为厚度优化参数，而通过其他参数（步骤 4-6）优化薄膜厚度。
sample of thickness control darr\downarrow 厚度控制样本 darr\downarrow
FEP171_3000A Step7-A
132 mm square 11 xx1111 \times 11 132 毫米见方 11 xx1111 \times 11
◻\square 3Sigma
rarr\rightarrow Range rarr\rightarrow 范围
rarr\rightarrow Average rarr\rightarrow 平均数
◻ 3Sigma
rarr Range
rarr Average| $\square$ 3Sigma |
| :---: |
| $\rightarrow$ Range |
| $\rightarrow$ Average |
Resist volume quad:2.5cc//2.0sec\quad: \mathbf{2 . 5} \mathbf{c c} / 2.0 \mathrm{sec} 阻力体积 quad:2.5cc//2.0sec\quad: \mathbf{2 . 5} \mathbf{c c} / 2.0 \mathrm{sec}
Resist temperature : 21 deg C 耐温：21 摄氏度
CUP temperature :21degC: 21 \mathrm{deg} \mathrm{C} 水杯温度 :21degC: 21 \mathrm{deg} \mathrm{C}
CUP humidity : 45% 杯内湿度：45
CPL (before COT) : 21deg C CPL（COT 前）：21 摄氏度
Ring offset 环形偏移
Ring offset is a parameter that can control the film thickness on the corners without changing the absolute thickness. It is difficult to control the corner thickness with a recipe. This parameter is effective to change the corner thickness. The effect of ring offset depends on other parameters such as the spin speed on the recipe. When a recipe with parameters different from the table above is used, the same effect as described below may not be obtained. (The influence on the corner thickness is not changed.) 环偏移是一个可以在不改变绝对厚度的情况下控制边角薄膜厚度的参数。使用配方很难控制边角厚度。该参数可有效改变边角厚度。环偏移的效果取决于其他参数，如配方中的旋转速度。当使用的配方参数与上表不同时，可能无法获得与下文所述相同的效果。(对角厚度的影响不会改变）。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
Ring height 环高度
square 方形
10.0 mm 10.0 毫米
13.0 mm 13.0 毫米
16.0 mm 16.0 毫米
19.0 mm 19.0 毫米
22.0 mm 22.0 毫米
132 mm 132 毫米
Average 平均
2993.3
2996.3
2991.3
2996.7
2999.5
Range 范围
40.0
27.0
27.0
34.0
39.0
3 sigma 3 西格玛
17.9
15.6
17.4
15.2
19.7
140 mm 140 毫米
Average 平均
2992.4
2996.6
2992.2
2997.1
2999.2
Range 范围
43.0
62.0
88.0
85.0
96.0
3 Sigma 3 西格玛
22.7
26.5
37.3
40.9
37.6
Ring height
square 10.0 mm 13.0 mm 16.0 mm 19.0 mm 22.0 mm
132 mm https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=276&top_left_y=1865&top_left_x=404 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=281&top_left_y=1865&top_left_x=677 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=287&top_left_y=1865&top_left_x=954 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=287&top_left_y=1865&top_left_x=1240 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=303&top_left_y=1865&top_left_x=1521
Average 2993.3 2996.3 2991.3 2996.7 2999.5
Range 40.0 27.0 27.0 34.0 39.0
3 sigma 17.9 15.6 17.4 15.2 19.7
140 mm https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=276&top_left_y=2289&top_left_x=404 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=281&top_left_y=2289&top_left_x=677 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=287&top_left_y=2289&top_left_x=954 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=287&top_left_y=2289&top_left_x=1240 https://cdn.mathpix.com/cropped/2025_03_12_2104e8e0e076a6930065g-33.jpg?height=276&width=303&top_left_y=2289&top_left_x=1521
Average 2992.4 2996.6 2992.2 2997.1 2999.2
Range 43.0 62.0 88.0 85.0 96.0
3 Sigma 22.7 26.5 37.3 40.9 37.6| Ring height | | | | | |
| :---: | :---: | :---: | :---: | :---: | :---: |
| square | 10.0 mm | 13.0 mm | 16.0 mm | 19.0 mm | 22.0 mm |
| 132 mm |  |  |  |  |  |
| Average | 2993.3 | 2996.3 | 2991.3 | 2996.7 | 2999.5 |
| Range | 40.0 | 27.0 | 27.0 | 34.0 | 39.0 |
| 3 sigma | 17.9 | 15.6 | 17.4 | 15.2 | 19.7 |
| 140 mm |  |  |  |  |  |
| Average | 2992.4 | 2996.6 | 2992.2 | 2997.1 | 2999.2 |
| Range | 43.0 | 62.0 | 88.0 | 85.0 | 96.0 |
| 3 Sigma | 22.7 | 26.5 | 37.3 | 40.9 | 37.6 |
*The pitch of the map above; 10"Å"10 \AA for ◻132mm\square 132 \mathrm{~mm}, and 12"Å"12 \AA for ◻140mm\square 140 \mathrm{~mm} *上图中的间距； 10"Å"10 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 12"Å"12 \AA 表示 ◻140mm\square 140 \mathrm{~mm} 。
3. Parameters Setting 3.参数设置
33 Optimization of Film Thickness 33 优化薄膜厚度
(14) Cup EXH (80Pa-240Pa) *Cup EXH is the value measured by exhaust pressure gauge directly under the cup. (14) 杯 EXH（80Pa-240Pa） *杯 EXH 是通过杯正下方的排气压力表测得的数值。
Resist volume :2.5cc//2.0sec
Resist temperature :21degC
CUP temperature :21deg C
CUP humidity :45%
CPL (before COT) :21degC| Resist volume | $: 2.5 \mathrm{cc} / 2.0 \mathrm{sec}$ |
| :--- | :--- |
| Resist temperature | $: 21 \mathrm{deg} \mathrm{C}$ |
| CUP temperature | $: 21 \mathrm{deg}$ C |
| CUP humidity | $: 45 \%$ |
| CPL (before COT) | $: 21 \mathrm{deg} \mathrm{C}$ |
Cup EXH influences the comer thickness as well as the ring offset does. Its effect is stronger than the ring offset. 杯口 EXH 和环偏移量一样，都会影响对边厚度。它的影响比环偏移更强。
This is the most effective parameter to control the corner film thickness. 这是控制角膜厚度最有效的参数。
:ample of thickness control darr\downarrow :足够的厚度控制 darr\downarrow
^(**)T{ }^{*} T he pitch of the map above; 20"Å"20 \AA for 132 mm , and 30"Å"30 \AA for a 140 mm ^(**)T{ }^{*} T 上图中的间距； 20"Å"20 \AA 表示 132 毫米， 30"Å"30 \AA 表示 140 毫米。
INTERNAL USE ONLY 仅供内部使用
3. Parameters Setting 3.参数设置
3.3 Optimization of Film Thickness 3.3 优化薄膜厚度
(15) Resist Temperature (20degC - 23degC) (15) 阻抗温度（20 摄氏度 - 23 摄氏度）
:2.5cc//2.0sec: \mathbf{2 . 5 c c} / 2.0 \mathrm{sec}
Resist temperature 耐高温
:X degC: X \operatorname{deg} \mathrm{C}
CUP temperature 银联温度
:21 degC: 21 \operatorname{deg} \mathrm{C}
CUP humidity 银联湿度
:45%: \mathbf{4 5 \%}
CPL (before COT) 消费清单（COT 之前）
:21degC: \mathbf{2 1 d e g} \mathrm{C}
Resist volume :2.5cc//2.0sec
Resist temperature :X degC
CUP temperature :21 degC
CUP humidity :45%
CPL (before COT) :21degC| Resist volume | $: \mathbf{2 . 5 c c} / 2.0 \mathrm{sec}$ |
| :--- | :--- |
| Resist temperature | $: X \operatorname{deg} \mathrm{C}$ |
| CUP temperature | $: 21 \operatorname{deg} \mathrm{C}$ |
| CUP humidity | $: \mathbf{4 5 \%}$ |
| CPL (before COT) | $: \mathbf{2 1 d e g} \mathrm{C}$ |
The resist temperature can control the film thickness of the mask center. Lower resist temperature makes the center thickness thicker. In the recipe above (Resist: FEP171, target film thickness: 3000"Å"3000 \AA ), the resist temperature is 21^(@)C21^{\circ} \mathrm{C}. The temperature 21^(@)C21^{\circ} \mathrm{C} is the result of adjusting FEP171 for the thickness 3000"Å"3000 \AA. To start optimizing the film thickness, the resist temperature should be 23^(@)C23^{\circ} \mathrm{C} (room temperature). When only the resist temperature is changed, coating unevenness is easily generated. Please change other temperature (such as cup and CPL) accordingly. 光刻胶温度可以控制掩膜中心的薄膜厚度。抗蚀剂温度越低，中心厚度越厚。在上述配方中（抗蚀剂：FEP171，目标薄膜厚度： 3000"Å"3000 \AA ），抗蚀剂温度为 21^(@)C21^{\circ} \mathrm{C} 。温度 21^(@)C21^{\circ} \mathrm{C} 是根据厚度 3000"Å"3000 \AA 调整 FEP171 的结果。要开始优化薄膜厚度，抗蚀剂温度应为 23^(@)C23^{\circ} \mathrm{C} （室温）。如果只改变抗蚀剂温度，很容易造成涂层不均匀。请相应改变其他温度（如杯温和 CPL）。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
The resist temperature can control the film thickness of the mask center. Lower resist temperature makes the cemter thickness thicker. In the recipe above (Resist: FEP171, target film thickness: 3000"Å"3000 \AA ), the resist temperature is 21^(@)C21^{\circ} \mathrm{C}. The temperature 21^(@)C21^{\circ} \mathrm{C} is the result of adjusting FEPI7I for the thickness 3000"Å"3000 \AA. To start optimizing the film thickness, the resist temperature should be 23^(@)C23^{\circ} \mathrm{C} (room temperature). When only the resist temperature is changed. coating unevenness is easily generated. Please change other temperature (such as cup and CPL) accordingly. 抗蚀剂温度可以控制掩膜中心的薄膜厚度。抗蚀剂温度越低，掩膜厚度越厚。在上述配方中（抗蚀剂：FEP171，目标膜厚： 3000"Å"3000 \AA ），抗蚀剂温度为 21^(@)C21^{\circ} \mathrm{C} 。温度 21^(@)C21^{\circ} \mathrm{C} 是根据厚度 3000"Å"3000 \AA 调整 FEPI7I 的结果。要开始优化薄膜厚度，抗蚀层温度应为 23^(@)C23^{\circ} \mathrm{C} （室温）。如果只改变抗蚀剂温度，很容易造成涂层不均匀。请相应改变其他温度（如杯温和 CPL）。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
Resist volume :2.5cc//2.0sec
Resist temperature :21degC
CUP temperature :X deg C
CUP humidity :45%
CPL /hefora COT :21 dan C| Resist volume | $: 2.5 \mathrm{cc} / 2.0 \mathrm{sec}$ |
| :--- | :--- |
| Resist temperature | $: 21 \mathrm{deg} \mathrm{C}$ |
| CUP temperature | $: X$ deg C |
| CUP humidity | $: 45 \%$ |
| CPL /hefora COT | $: 21$ dan C |
Ring offset
16.0 mm 环偏移 16.0 毫米
Cup temperature is not used as a parameter for optimizing the film thickness. Change the cup temperature according to resist temperature and CPL temperature to optimize the film thickness. 杯温不作为优化薄膜厚度的参数。请根据抗蚀剂温度和 CPL 温度改变杯温，以优化薄膜厚度。
imple of thickness control darr\downarrow 厚度控制的影响 darr\downarrow
*The pitch of the map above; 8"Å"8 \AA for ◻132mm\square 132 \mathrm{~mm}, and 20"Å"20 \AA for ◻140mm\square 140 \mathrm{~mm} * 上图的间距； 8"Å"8 \AA 表示 ◻132mm\square 132 \mathrm{~mm} ， 20"Å"20 \AA 表示 ◻140mm\square 140 \mathrm{~mm} 。
CPL temperature is a parameter that slightly influences the absolute thickness. As described in the previous section, when only the CPL temperature is changed, coating unevenness is easily generated. Please change other temperature (such as cup and Resist) accordingly. CPL 温度是一个对绝对厚度影响较小的参数。如上一节所述，仅改变 CPL 温度时，容易产生涂层不均匀。请相应改变其他温度（如杯温和电阻温度）。
*Example of thickness control darr\downarrow *厚度控制示例 darr\downarrow
The resist volume influences the center of the film. The absolute thickness is hardly changed, but the center thickness (inscribed circle) becomes thicker and unevenness is added to the film thickness as the resist volume decreases. When the resist volume is too small, it cannot cover the entire mask. Normally, make adjustment with 2.5 cc . 抗蚀剂体积会影响薄膜的中心。绝对厚度几乎没有变化，但中心厚度（刻圆）会变厚，并且随着抗蚀剂体积的减小，薄膜厚度会增加不均匀度。抗蚀剂体积太小时，无法覆盖整个掩膜。通常情况下，用 2.5 cc .
ple of thickness control darr\downarrow 厚度控制 darr\downarrow
FEP171_3000A Resist vol 132mm square 11 xx1111 \times 11 FEP171_3000A 电阻卷 132 毫米见方 11 xx1111 \times 11
Resist volume 阻力体积
:XCc//2.030C: X \mathrm{Cc} / 2.030 \mathrm{C}
Resist temperature 耐高温
:21 degC: 21 \operatorname{deg} \mathrm{C}
CUP temperaturo 银联温度
:21 degC: 21 \operatorname{deg} \mathrm{C}
CUP humidity 银联湿度
:45%: 45 \%
CPL (before COT) 消费清单（COT 之前）
:21degC: 21 \mathrm{deg} \mathrm{C}
Resist volume :XCc//2.030C
Resist temperature :21 degC
CUP temperaturo :21 degC
CUP humidity :45%
CPL (before COT) :21degC| Resist volume | $: X \mathrm{Cc} / 2.030 \mathrm{C}$ |
| :--- | :--- |
| Resist temperature | $: 21 \operatorname{deg} \mathrm{C}$ |
| CUP temperaturo | $: 21 \operatorname{deg} \mathrm{C}$ |
| CUP humidity | $: 45 \%$ |
| CPL (before COT) | $: 21 \mathrm{deg} \mathrm{C}$ |
*The pitch of the map above; 10"Å"10 \AA for 132 mm , and 15"Å"15 \AA for ◻140mm\square 140 \mathrm{~mm} *上图的间距； 10"Å"10 \AA 表示 132 毫米， 15"Å"15 \AA 表示 ◻140mm\square 140 \mathrm{~mm}
(2) Procedure of Optimizing Thickness (2) 优化厚度的程序
Time 时间
Speed 速度
Dispanse 分歧
Arm 手臂
Cup EXH 杯 EXH
Step 步骤
Loop 循环
(sec) （秒）
(rpm) （转速）
(rpm//s)(\mathrm{rpm} / \mathrm{s})
Dispense 分配
position 位置
speed 速度
(Pa) (帕)
1
1.0
0
5000
Center (W) 中心 (W)
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
2
2.0
0
5000
Resist 抵制
Center 中心
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
3
4.0
0
5000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
4
1.0
3200
8000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
5
1.0
1200
8000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
6
3.0
500
5000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
7
50.0
100
1000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
8
4
2.0
500
8000
B-Rinse1+2
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
9
End 结束
1.0
500
5000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
10
30.0
1000
1000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
11
2.0
0
1000
Home 首页
150mm//s150 \mathrm{~mm} / \mathrm{s}
200
Ring offset 环形偏移
Resist volume Resist temperature CUP temperature CUP humidity 电阻体积 电阻温度 银联温度 银联湿度
In the previous section, dependency of each parameter in the basic recipe is described. Basically, to optimize the film thickness, change the parameters only in the yellow cells. The temperature in the green cells normally should be 23^(@)C23^{\circ} \mathrm{C} to start the adjustment. 上一节介绍了基本配方中各参数的相关性。基本上，要优化薄膜厚度，只需更改黄色单元中的参数。绿色单元中的温度通常应为 23^(@)C23^{\circ} \mathrm{C} 才能开始调整。
The following describes the procedure to optimize the film thickness. 下面介绍优化薄膜厚度的步骤。
*When the film thickness is optimized from scratch *从零开始优化薄膜厚度
(1) First, dispense the resist on the mask with the basic recipe, and check the difference between the target film thickness and the actual thickness. (The temperature of resist and cup should be 23^(@)C23^{\circ} \mathrm{C}.) (1) 首先，按照基本配方在掩膜上点涂光刻胶，然后检查目标膜厚与实际膜厚之间的差异。(光刻胶和杯子的温度应为 23^(@)C23^{\circ} \mathrm{C} 。）
(2) When the actual film thickness is largely different from the target thickness, follow Step4 to make the thickness closer to the target. (2) 当实际薄膜厚度与目标厚度相差较大时，按照步骤 4 使厚度更接近目标厚度。
(3) When the spin speed of Step4 is changed in (2), reduce the spin speed of Step5 to half of Step4. (The spin speed of Step5 should be lower than the one of Step4.) (3) 当步骤 4 的旋转速度在 (2) 中改变时，将步骤 5 的旋转速度降至步骤 4 的一半（步骤 5 的旋转速度应低于步骤 4 的旋转速度）。
(4) When the target film thickness is satisfied but profile has some unevenness and uniformity is not satisfied, follow Step6 to make adjustment. (Please note that Step5 can change the entire thickness although it can adjust the unevenness.) (4) 当达到目标膜厚，但轮廓有一些不平整，均匀度不理想时，按照步骤 6 进行调整。(请注意，步骤 5 虽然可以调整不均匀度，但不能改变整个厚度）。
When the actual film thickness is largely different from the target thickness, repeat (2). 当实际薄膜厚度与目标厚度相差较大时，重复 (2)。
(5) When the uniformity is poor because of the corner thickness, adjust the film thickness uniformity with changing the ring offset or cup exhaust. (5) 当角厚度导致均匀性差时，可通过改变环偏移量或杯形排气量来调整膜厚均匀性。
(6) When the uniformity is satisfied but the target film thickness was not by the adjustment above, make a slight change in Step 4 for fine adjustment. (6) 当均匀度满足要求，但目标膜厚未通过上述调整达到时，在步骤 4 中稍作改动，进行微调。
(7) When coating unevenness is found, make a change in Step3. (If there is no factor related to the nozzle tip and dummy dispense.) (7) 发现涂层不均匀时，对步骤 3 进行更改（如果不存在与喷嘴尖端和虚喷有关的因素）。
This is a brief adjustment procedure. 这是一个简短的调整程序。
As described previously, when the target film thickness and uniformity are changed based on the already completed recipe, refer to 3.3 (1) Parameter Dependency and change the parameters only in the yellow cells. 如前所述，根据已完成的配方更改目标薄膜厚度和均匀性时，请参阅 3.3 (1) 参数依赖性，仅更改黄色单元格中的参数。
33 Optimization of Film Thickness 33 优化薄膜厚度
(3) Dynamic Coating Recipe (3) 动态涂层配方
In the basic ACT M COT recipe, the static coating is the standard. The table below describes a dynamic coating recipe for reference. 在基本的 ACT M COT 配方中，静态涂层是标准的。下表描述了动态涂层配方，供参考。
When a customer requests a dynamic coating recipe, refer to the following and create a recipe. 当客户要求动态涂层配方时，请参考以下内容并创建配方。
*Dynamic coating recipe with FEP171 resist targeting at 3000"Å"3000 \AA (Reference) *采用 FEP171 抗蚀剂的动态涂层配方，目标值为 3000"Å"3000 \AA （参考资料）
Only the Time and Speed in Step2 and Step3 were different from the ones of the static coating recipe. Except for these parameters, the recipe has the same structure and parameter dependency as the static coating recipe. To optimize the film thickness with the dynamic coating recipe, please refer to 3.3(1) Parameter Dependency and change the parameters only in the yellow cells. 只有步骤 2 和步骤 3 中的时间和速度与静态涂层配方不同。除这些参数外，配方的结构和参数依赖性与静态喷涂配方相同。要使用动态喷涂配方优化膜厚，请参考 3.3(1) 参数依赖性，仅更改黄色单元格中的参数。
4. Action against Process Performance 4.针对流程绩效采取的行动
4.1 Within Mask Film Thickness Uniformity 4.1 掩膜内薄膜厚度均匀性
28 Bowl-shaped Profile (Concavity) 28 碗形轮廓（凹面）
TOKYO ELECTRON LIMITED 东京电子有限公司
When the cup exhaust or the ring offset is not optimized, the profile can become wedge-shaped (the corner thickness is thicker) as shown in the left. 如左图所示，当杯形排气或环形偏移未优化时，轮廓会变成楔形（角厚度变厚）。
When the corner thickness is thin contrary from the left, it is caused by the same factors. 当角厚度与左侧相反变薄时，也是由同样的因素造成的。
When the film condition is similar to the one shown in the left even though the target thickness is satisfied, change the cup exhaust or the ring offset, and check the condition again. 如果在满足目标厚度的情况下，薄膜状况仍与左图相似，则应更改杯排气量或环偏移量，然后再次检查状况。
When the parameters of Step6 are not optimized, the profile can become bowl-shaped (the center thickness is thinner) with poor uniformity as shown in the left even though the target film thickness is satisfied. 如果没有优化步骤 6 中的参数，即使满足了目标薄膜厚度，剖面也会变成碗形（中心厚度变薄），均匀性很差，如左图所示。
When the actual thickness is different from the target thickness, adjust the parameters of Step4, or 5. 当实际厚度与目标厚度不同时，调整步骤 4 或 5 的参数。
Shorten the time of Step6 by 0.5 sec , or reduce the spin speed by 50 rpm to adjust the thickness. can become dome-shaped (the center thickness is thicker) with poor uniformity as shown in the left even though the target film thickness is satisfied. 将步骤 6 的时间缩短 0.5 秒，或将旋转速度降低 50 转/分钟，以调整厚度。 即使达到目标膜厚，也会出现如左图所示的均匀性差的圆顶形（中心厚度较厚）。
When the actual thickness is different from the target thickness, adjust the parameters of Step4 or 5. 当实际厚度与目标厚度不同时，调整步骤 4 或 5 的参数。
Extend the time of Step6 by 0.5 sec , or increase the spin speed by 50 rpm to adjust the thickness. 将步骤 6 的时间延长 0.5 秒，或将脱水转速提高 50 rpm，以调整厚度。
First, change the parameters of Step6, to make the center thickness thicker. Then, change the value of the cup exhaust 首先，更改步骤 6 的参数，使中心厚度变厚。然后，更改杯形排气量的值
When the cup exhaust, ring offset, or parameters of Step6 are not optimized, the profile can become M -shaped even though the target film thickness is satisfied. 如果没有优化杯排气、环偏移或步骤 6 的参数，即使满足了目标薄膜厚度，轮廓也可能变成 M 形。
Make readjustment with the above-described method 1,2, or 3. 用上述方法 1、2 或 3 进行重新调整。
or ring offset to adjust the corner thickness. 或环形偏移来调整角厚度。
